Stacked die ground shield
The present disclosure relates to semiconductor devices. Embodiments of the teachings thereof may include processes for manufacturing of semiconductor devices and the devices themselves. For example, some embodiments may include an integrated circuit package comprising: a lead frame; a first die mounted on the lead frame in flip-chip fashion, with a frontside of the first die connected to the lead frame; wherein the first die comprises an oxide layer deposited on a backside of the first die and a back metal layer deposited on the oxide layer; and a second die mounted on the back metal layer of the first die.
1. An integrated circuit package comprising:
a lead frame;
a first die mounted on the lead frame in flip-chip fashion, with a frontside of the first die connected to the lead frame;
wherein the first die comprises an oxide layer deposited on a backside of the first die and a back metal layer deposited on the oxide layer; and
a second die mounted on the back metal layer of the first die;
wherein the oxide layer and the back metal layer both cover a full extent of the backside of the first die and do not extend beyond edges of the first die.
2. The integrated circuit package according to claim 1 , wherein the second die is mounted on the back metal layer with an adhesive.
3. The integrated circuit package according to claim 1 , wherein the second die is mounted on the back metal layer with a non conductive epoxy.
4. The integrated circuit package according to claim 1 , further comprising bumps connecting the first die to the lead frame.
5. The integrated circuit package according to claim 1 , further comprising the back metal layer wire bonded to a finger of the lead frame.
6. The integrated circuit package according to claim 1 , wherein the first die comprises a power semiconductor.
7. The integrated circuit package according to claim 1 , wherein the second die comprises a controller.
8. The integrated circuit package according to claim 1 , wherein the second die comprises a circuit sensitive to noise.
9. The integrated circuit package according to claim 1 , wherein:
the first die comprises a power semiconductor; and
the second die comprises a controller.
10. A circuit comprising:
a lead frame;
a first die mounted on the lead frame in flip-chip fashion, with the front of the first die connected to the lead frame;
wherein the first die comprises an oxide layer deposited on the back of the first die and a back metal layer deposited on the oxide layer;
a second die mounted on the back metal layer of the first die;
the back metal layer wire bonded to a finger of the lead frame; and
a voltage source providing a shielding voltage fed to the back metal layer through the finger;
wherein the oxide layer and the back metal layer both cover a full extent of the backside of the first die and do not extend beyond edges of the first die.
11. A method for manufacturing a semiconductor device, comprising:
manufacturing a first semiconductor die comprising at least one semiconductor device;
depositing an oxide layer on a back side of the die; and
depositing a back metal layer on top of the oxide layer;
wherein the oxide layer and the back metal layer both cover a full extent of the backside of the first die and do not extend beyond edges of the first die.
12. The method according to claim 11 , further comprising:
mounting the first die on a lead frame in flip-chip fashion;
mounting a second die on top of the first die using an adhesive;
wire bonding the back metal layer with one of a plurality of lead frame fingers;
wire bonding the second die with a different one of the plurality of lead frame fingers.
13. The method according to claim 11 , further comprising encapsulating the semiconductor device.
14. A method of operating an integrated circuit package including a lead frame, a first die mounted on the lead frame in flip-chip fashion, with the front of the first die connected to the lead frame, wherein the first die comprises an oxide layer deposited on the back of the first die and a back metal layer deposited on the oxide layer, a second die mounted on the back metal layer of the first die, the back metal layer wire bonded to a finger of the lead frame, wherein the oxide layer and the back metal layer both cover a full extent of the backside of the first die and do not extend beyond edges of the first die and a voltage source providing a shielding voltage fed to the back metal layer through the finger, the method comprising:
generating a shielding voltage;
feeding the shielding voltage to said finger of the lead frame; and
operating a circuit and devices within the first and second dies.
15. The method according to claim 14 , further comprising a controller in the second die controlling at least one power transistor in the first die.