Bulk acoustic wave resonator comprising a ring
View Patent ↗An acoustic resonator includes a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; a second electrode disposed over the piezoelectric layer; and a ring disposed in either the first electrode, or in the second electrode. The ring defines at least a portion of a perimeter along an active region of the acoustic resonator.
1. A bulk acoustic wave (BAW) resonator device, comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode;
a second electrode disposed over the piezoelectric layer, wherein the second electrode further comprises a raised frame element, or a recessed frame element, or both a raised frame element and a recessed frame element; and
a ring disposed in either the first electrode, or in the second electrode, wherein the ring defines at least a portion of a perimeter along an active region of the BAW resonator device,
wherein the ring is a first ring, and the BAW resonator device further comprises a second ring disposed in the piezoelectric layer.
2. A BAW resonator device as claimed in claim 1 , wherein the first ring is disposed in the first electrode.
3. A BAW resonator device as claimed in claim 2 , wherein the first ring, or the second ring, or both the first and second rings are filled with air.
4. A BAW resonator device as claimed in claim 2 , wherein the first ring, or the second ring, or both the first and second rings are filled with a dielectric material.
5. A BAW resonator device as claimed in claim 4 , wherein the dielectric material comprises one of non-etchable borosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), or silicon carbide (SiC).
6. A BAW resonator device as claimed in claim 2 , wherein the first ring is filled with a dielectric material, and the first electrode terminates over a cavity disposed in the substrate.
7. A BAW resonator device as claimed in claim 1 , further comprising a passivation layer.
8. A BAW resonator device as claimed in claim 7 , wherein the first ring, or the second ring, or both the first and second rings are filled with air.
9. A BAW resonator device as claimed in claim 7 , wherein the first ring, or the second ring, or both the first and second rings are filled with a dielectric material.
10. A BAW resonator device as claimed in claim 7 , wherein the first ring is filled with a dielectric material, and the first electrode terminates over a cavity disposed in the substrate.
11. A BAW resonator device as claimed in claim 7 , wherein the first ring, or the second ring, or both the first and second rings are filled with a metal or a metal alloy.
12. A BAW resonator device as claimed in claim 11 , wherein the metal comprises one or more of iridium (Ir), Tungsten (W), Molybdenum (Mo), Niobium (Nb), Ruthenium (Ru), Aluminum (Al), and Cooper (Cu).
13. A bulk acoustic wave (BAW) resonator device, comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode;
a second electrode disposed over the piezoelectric layer, wherein the second electrode further comprises a raised frame element, or a recessed frame element, or both a raised frame element and a recessed frame element;
a first ring disposed in either the first electrode, or in the second electrode, wherein the first ring defines a perimeter along an active region of the BAW resonator device; and
a second ring disposed in the piezoelectric layer.
14. A BAW resonator device as claimed in claim 13 , further comprising a passivation layer.
15. A bulk acoustic wave (BAW) resonator device, comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode;
a second electrode disposed over the piezoelectric layer; and
a passivation layer disposed over the second electrode, wherein a first ring exists between the second electrode and the passivation layer, and a second ring exists in the piezoelectric layer and along at least a portion of an active region of the BAW resonator device, wherein the first electrode terminates over a cavity disposed in the substrate.
16. A BAW resonator device as claimed in claim 15 , wherein the first ring, or the second ring, or both the first and second rings are filled with a dielectric material.
17. A BAW resonator device as claimed in claim 15 , wherein the dielectric material comprises one of non-etchable borosilicate glass (NEBSG), carbon doped silicon dioxide (CDO), or silicon carbide (SiC).
18. A BAW resonator device as claimed in claim 15 , wherein the first ring is filled with a dielectric material.
19. A BAW resonator device as claimed in claim 15 , wherein the first ring, or the second ring, or both the first and second rings are filled with a metal or a metal alloy.
20. A BAW resonator device as claimed in claim 19 , wherein the metal comprises one or more of Iridium (Ir), Tungsten (W), Molybdenum (Mo), Niobium (Nb), Ruthenium (Ru), Aluminum (Al), and Cooper (Cu).