METAL LINES LOCATED BETWEEN ETCH STOP LAYERS AND SEPARATED BY AIR GAPS AND METHODS OF FORMING THE SAME
A semiconductor structure includes contact-level metal structures embedded in a contact-level dielectric layer, a via-level dielectric layer overlying the contact-level dielectric layer, an etch-stop dielectric layer overlying the via-level dielectric layer, integrated line-and-via structures each including a metal line portion and at least one via portion, discrete etch-stop dielectric cap rails that overlie top surfaces of the respective metal line portions, dielectric rails located between neighboring pairs of the metal line portions, and air gaps located between neighboring pairs of the metal line portions and at least partially enclosed by the respective dielectric rails.
1 . A semiconductor structure, comprising:
a contact-level dielectric layer overlying semiconductor devices;
contact-level metal structures embedded in the contact-level dielectric layer and electrically connected to a respective electrical node of the semiconductor devices;
a via-level dielectric layer overlying the contact-level dielectric layer;
an etch-stop dielectric layer overlying the via-level dielectric layer;
integrated line-and-via structures each comprising a metal line portion and at least one via portion, wherein each via portion of the integrated line-and-via structures vertically extends through the etch-stop dielectric layer and the via-level dielectric layer and contacts a top surface of a respective one of the contact-level metal structures, and the metal line portions are laterally spaced apart from each other along a first horizontal direction and laterally extend along a second horizontal direction;
discrete etch-stop dielectric cap rails that overlie top surfaces of the respective metal line portions;
dielectric rails located between neighboring pairs of metal line portions of the metal line portions; and
air gaps located between neighboring pairs of the metal line portions and at least partially enclosed by the respective dielectric rails.
2 . The semiconductor structure of claim 1 , wherein:
one of the metal line portions comprises a pair of tapered metallic sidewalls that are contained within a pair of non-vertical Euclidean planes that laterally extend along the second horizontal direction; and
one of the etch-stop dielectric cap rails contacts a top surface of said one of the metal line portions, and comprises a pair of tapered dielectric sidewalls that are contained within the pair of non-vertical Euclidean planes.
3 . The semiconductor structure of claim 1 , wherein:
the etch-stop dielectric layer comprises a silicon nitride or a silicon carbonitride layer;
the discrete etch-stop dielectric cap rails comprise silicon nitride or a silicon carbonitride rails; and
the dielectric rails comprise silicon carbide or silicon oxycarbide rails.
4 . The semiconductor structure of claim 1 , wherein:
one of the metal line portions comprises a top surface having a first width along the first horizontal direction and comprises a bottom surface having a second width along the first horizontal direction; and
the second width is greater than the first width.
5 . The semiconductor structure of claim 1 , wherein:
one of the metal line portions comprises a top surface having a first width along the first horizontal direction and comprises a bottom surface having a second width along the first horizontal direction; and
the second width is less than the first width.
6 . The semiconductor structure of claim 1 , wherein:
a first air gap of the air gaps is located entirely within a respective one of the dielectric rails;
an entirety of surfaces of the first air gap consists of inner dielectric surfaces of one of the dielectric rails; and
the first air gap is completely enclosed by the respective one of the dielectric rails.
7 . The semiconductor structure of claim 6 , wherein the dielectric rails have planar bottom surfaces that are contained between a horizontal plane including a top surface of the etch-stop dielectric layer and a horizontal plane including a bottom surface of the etch-stop dielectric layer.
8 . The semiconductor structure of claim 7 , wherein one of the dielectric rails comprises:
a bottom surface contacting a recessed horizontal surface of the etch-stop dielectric layer;
a pair of lower tapered sidewalls contacting sidewalls of the etch-stop dielectric layer; and
a pair of upper tapered sidewalls contacting sidewalls of a pair of metal line portions of the integrated line-and-via structures.
9 . The semiconductor structure of claim 1 , wherein:
a first air gap of the air gaps is located entirely below a respective one of the dielectric rails;
an upper surface of the first air gap comprises a lower dielectric surface of the respective one of the dielectric rails;
a lower surface of the first air gap comprises an upper dielectric surface of the etch-stop dielectric layer; and
the first air gap is partially enclosed by the respective one of the dielectric rails.
10 . The semiconductor structure of claim 1 , wherein:
the dielectric rails have planar top surfaces that are contained within a horizontal plane including top surfaces of the etch-stop dielectric cap rails; and
a vertical cross-sectional profile of one of the air gaps along a vertical plane that is perpendicular to the second horizontal direction has a pointed tip portion having a decreasing width as a function of an increasing distance from a horizontal plane including a bottom surface of the etch-stop dielectric layer.
11 . The semiconductor structure of claim 1 , wherein:
one of the integrated line-and-via structures comprises a metallic barrier liner comprising a conductive metal nitride material and a metal fill material portion;
interfaces between the one of the integrated line-and-via structures and a pair of dielectric rails of the dielectric rails comprises interfaces between the metal fill material portion and the pair of dielectric rails; and
the metallic barrier liner contacts lower portions of sidewalls of the pair of dielectric rails.
12 . The semiconductor structure of claim 1 , wherein:
one of the integrated line-and-via structures comprises a metallic barrier liner comprising a conductive metal nitride material and a metal fill material portion;
interfaces between the one of the integrated line-and-via structures and a pair of dielectric rails of the dielectric rails consist of interfaces between the metallic barrier liner and the pair of dielectric rails; and
the metallic barrier liner contacts peripheral portions of a bottom surface of one of the etch-stop dielectric cap rails.
13 . The semiconductor structure of claim 1 , wherein the semiconductor devices comprise three-dimensional memory devices comprising an alternating stack of insulating layers and electrically conductive layers, and memory opening fill structures each comprising a memory film and a vertical semiconductor channel extending through the alternating stack, wherein the metal line portions comprise bit lines of the three-dimensional memory devices.
14 . A method of forming a device structure, comprising:
forming contact-level metal structures embedded in a contact-level dielectric layer;
forming a via-level dielectric layer over the contact-level dielectric layer;
forming an etch-stop dielectric layer over the via-level dielectric layer;
forming via cavities through the etch-stop dielectric layer and the via-level dielectric layer;
forming at least one metallic material layer in the via cavities and over the etch-stop dielectric layer;
forming an etch-stop dielectric cap material layer over the at least one metallic material layer;
patterning the etch-stop dielectric cap material layer and the at least one metallic material layer, wherein patterned portions of the at least one metallic material layer comprise integrated line-and-via structures each comprising a metal line portion and at least one via portion, wherein each via portion of the integrated line-and-via structures vertically extends through the etch-stop dielectric layer and the via-level dielectric layer and contacts a top surface of a respective one of the contact-level metal structures, and the metal line portions are laterally spaced apart from each other along a first horizontal direction and laterally extend along a second horizontal direction, and wherein patterned portions of the etch-stop dielectric cap material layer comprise etch-stop dielectric cap rails that overlie top surfaces of the metal line portions; and
forming dielectric rails between neighboring pairs of metal line portions of the metal line portions.
15 . The method of claim 14 , wherein:
the dielectric rails are formed by anisotropically depositing a dielectric material into gaps between the metal line portions of the integrated line-and-via structures, and by removing portions of the dielectric material from above a horizontal plane including top surfaces of the metal line portions; and
air gaps are located between neighboring pairs of the metal line portions and are at least partially enclosed by the respective dielectric rails.
16 . The method of claim 14 , wherein:
one of the metal line portions has a top surface having a first width along the first horizontal direction and a bottom surface having a second width along the first horizontal direction and contacting a top surface of the etch-stop dielectric layer; and
the second width is greater than the first width.
17 . A method of forming a device structure, comprising:
forming contact-level metal structures embedded in a contact-level dielectric layer;
forming a via-level dielectric layer over the contact-level dielectric layer;
forming an etch-stop dielectric layer over the via-level dielectric layer;
forming a sacrificial template material layer over the etch-stop dielectric layer;
forming integrated line-and-via cavities, wherein each of the integrated line-and-via cavities comprises a respective line cavity that is formed through the sacrificial template material layer and at least one via cavity that is formed through the etch-stop dielectric layer and the via-level dielectric layer;
forming integrated line-and-via structures in the integrated line-and-via cavities, wherein each of the integrated line-and-via structures comprises a metal line portion and at least one via portion;
forming recess cavities by vertically recessing the metal line portions of the integrated line-and-via structures;
forming etch-stop dielectric cap rails in the recess cavities;
removing remaining portions of the sacrificial template material layer; and
forming dielectric rails between neighboring pairs of metal line portions of the metal line portions.
18 . The method of claim 17 wherein:
the dielectric rails are formed by anisotropically depositing a dielectric material into gaps between the metal line portions of the integrated line-and-via structures, and by removing portions of the dielectric material from above a horizontal plane including top surfaces of the metal line portions; and
air gaps are located between neighboring pairs of the metal line portions and are at least partially enclosed by the respective dielectric rails.
19 . The method of claim 17 , wherein:
the metal line portions of the integrated line-and-via structures are laterally spaced apart from each other along a first horizontal direction and laterally extend along a second horizontal direction;
one of the metal line portions has a top surface having a first width along the first horizontal direction and a bottom surface having a second width along the first horizontal direction and contacting a top surface of the etch-stop dielectric layer; and
the second width is less than the first width.
20 . The method of claim 17 , further comprising vertically recessing portions of the etch-stop dielectric layer that are not covered by the integrated line-and-via structures after removal of the remaining portions of the sacrificial template material layer, wherein the dielectric rails are formed above recessed surfaces of the etch-stop dielectric layer.