IP Library Assignment 012061/0121
Patent Assignment
Reel/Frame 012061/0121

Assignment of Assignor's Interest

Recorded: 2001-08-06 Pages: 3
Assignors
TOBASHI, SHUJI
Executed: 2001-06-21
OHASHI, TADASHI
Executed: 2001-06-21
MITANI, SHINICHI
Executed: 2001-07-04
ARAI, HIDEKI
Executed: 2001-07-04
TAKAHASHI, HIDENORI
Executed: 2001-07-04
Assignees
TOSHIBA CERAMICS CO., LTD.
5-25, NISHI-SHINJUKU 7-CHOME, SHINJUKU-KU, TOKYO, 163-0023, JAPAN
TOSHIBA KIKAI KABUSHIKIKAISHA
2-11, GINZA 4-CHOME, CHUUOU-KU, TOKYO, 104-0061, JAPAN
Covered Property (1)
Method of Chemically Growing a Thin Film in a Gas Phase on a Silicon Semiconductor Substrate
Patent: 6,537,924 →
Application: 09/921,893 →
Publication: US 2002/0045009
Related Assignments (5)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Aug 15, 2006
From: TOSHIBA KIKAI KABUSHIKIKAISHA
To: NUFLARE TECHNOLOGY, INC.
Reel/Frame 018120/0348 →
Change of Address Sep 22, 2006
From: TOSHIBA CERAMICS CO., LTD.
To: TOSHIBA CERAMICS CO., LTD.
Reel/Frame 018291/0382 →
Merger Sep 13, 2007
From: TOSHIBA CERAMICS CO., LTD.
To: COVALENT MATERIALS CORPORATION
Reel/Frame 019817/0749 →
Assignment of Assignor's Interest Mar 11, 2013
From: COVALENT MATERIALS CORPORATION
To: COVALENT SILICON CORPORATION
Reel/Frame 029962/0497 →
Change of Name Mar 13, 2013
From: COVALENT SILICON CORPORATION
To: GLOBALWAFERS JAPAN CO., LTD.
Reel/Frame 029991/0421 →