Assignment of Assignor's Interest

Recorded: 2004-06-28 Received: 2004-06-28 Pages: 2

Assignor

ANGSTRON SYSTEMS, INC.

Executed: 2004-05-17

Assignee

NOVELLUS SYSTEMS, INC.

4000 NORTH FIRST STREET, SAN JOSE, CA, 95134, UNITED STATES

Covered Properties (8)

Sequential Method for Depositing a Film by Modulated Ion-Induced Atomic Layer Deposition (Mii-Ald)

Application: 10/137,851 →

Varying Conductance Out of a Process Region to Control Gas Flux in an Ald Reactor

Application: 10/027,592 →

Adsorption Process for Atomic Layer Deposition

Application: 09/999,636 →

Substrate temperature control in an ALD reactor

Application: 10/000,825 →

Variable Gas Conductance Control for a Process Chamber

Application: 09/902,080 →

Method and Apparatus for Improved Temperature Control in Atomic Layer Deposition

Application: 09/854,092 →

Sequential Method for Depositing a Film by Modulated Ion-Induced Atomic Layer Deposition (Mii-Ald)

Application: 09/812,285 →

Continuous Method for Depositing a Film by Modulated Ion-Induced Atomic Layer Deposition (Mii-Ald)

Application: 09/812,486 →