IP Library Assignment 015885/0897
Patent Assignment
Reel/Frame 015885/0897

Assignment of Assignor's Interest

Recorded: 2004-10-18 Pages: 5
Assignors
POPP, MARTIN
Executed: 2003-01-23
TEMMLER, DIETMAR
Executed: 2003-01-23
SCHUPKE, KRISTIN
Executed: 2003-02-04
SCHILLING, UWE
Executed: 2003-01-30
POMPLUN, KERSTIN
Executed: 2003-01-22
Assignee
INFINEON TECHNOLOGIES AG
ST.-MARTIN-STRASSE 53, MUENCHEN, 81669, GERMANY
Covered Property (1)
Method for Producing a Cavity in a Monocrystalline Silicon Substrate and a Semiconductor Component Having a Cavity in a Monocrystalline Silicon Substrate with an Epitaxial Covering Layer
Patent: 6,821,863 →
Application: 10/348,150 →
Publication: US 2003/0136994
Related Assignments (3)
Other recorded transfers of the patent in this record — the chain of ownership.
Assignment of Assignor's Interest Jan 13, 2010
From: INFINEON TECHNOLOGIES AG
To: QIMONDA AG
Reel/Frame 023773/0457 →
Assignment of Assignor's Interest May 8, 2015
From: QIMONDA AG
To: INFINEON TECHNOLOGIES AG
Reel/Frame 035623/0001 →
Assignment of Assignor's Interest Oct 7, 2015
From: INFINEON TECHNOLOGIES AG
To: POLARIS INNOVATIONS LIMITED
Reel/Frame 036808/0284 →