Patent Assignment
Reel/Frame 019069/0046
Assignment of Assignor's Interest
Recorded: 2007-03-27
Pages: 6
Assignor
SPANSION INC.
Executed: 2007-01-31
Assignee
SPANSION LLC
915 DEGUIGNE DRIVE, P.O. BOX 3453, MAIL STOP 250, SUNNYVALE, CALIFORNIA, 94088-3453
Covered Properties
(35)
Non-Self-Aligned Side Channel Implants for Flash Memory Cells
Patent:
6,127,222 →
Application:
08/991,687 →
Method and System for Providing Localized Gate Edge Rounding with Minimal Encroachment and Gate Edge Lifting
Patent:
6,387,755 →
Application:
08/992,616 →
Method and System for Providing a Drain Side Pocket Implant
Patent:
6,103,602 →
Application:
08/992,618 →
Method and System for Selected Source During Read and Programming of Flash Memory
Patent:
5,949,718 →
Application:
08/992,622 →
Manufacturing Process to Eliminate Polystringers in High Density Nand-Type Flash Memory Devices
Patent:
5,994,239 →
Application:
08/993,343 →
Manufacturing Process to Eliminate Ono Fence Material in High Density Nand-Type Flash Memory Devices
Patent:
6,281,078 →
Application:
08/993,344 →
Nitrogen Ion Implanted Amorphous Silicon to Produce Oxidation Resistant and Finer Grain Polysilicon Based Floating Gates
Patent:
6,114,230 →
Application:
08/993,443 →
In Situ P Doped Amorphous Silicon by NH3 to Form Oxidation Resistant and Finer Grain Floating Gates.
Patent:
6,140,246 →
Application:
08/993,444 →
Method and System for Source Only Reoxidation After Junction Implant for Flash Memory Devices
Patent:
5,940,709 →
Application:
08/993,599 →
Method and System for Using a Spacer to Offset Implant Damage and Reduce Lateral Diffusion in Flash Memory Devices
Patent:
6,025,240 →
Application:
08/993,600 →
Split Voltage for Nand Flash
Patent:
6,005,804 →
Application:
08/993,634 →
Method and System for Gate Stack Reoxidation Control
Patent:
6,015,736 →
Application:
08/993,787 →
Method for Laterally Peaked Source Doping Profiles for Better Erase Control in Flash Memory Devices
Patent:
6,329,257 →
Application:
08/994,140 →
Flash Eprom Cell with Reduced Short Channel Effect and Method for Providing Same
Patent:
6,188,101 →
Application:
09/006,757 →
Non-Uniform Threshold Voltage Adjustment in Flash Eproms Through Gate Work Function Alteration
Patent:
5,888,867 →
Application:
09/023,241 →
Floating Gate Capacitor for Use in Voltage Regulators
Patent:
6,137,153 →
Application:
09/023,497 →
New Approach for the Formation of Semiconductor Devices Which Reduces Band-to-Band Tunneling Current and Short-Channel Effects
Patent:
6,153,487 →
Application:
09/040,107 →
Narrower Erase Distribution for Flash Memory by Smaller Poly Grain Size
Patent:
5,981,339 →
Application:
09/045,013 →
Capacitor for Use in a Capacitor Divider That Has a Floating Gate Transistor as a Corresponding Capacitor
Patent:
6,262,469 →
Application:
09/047,237 →
Method for Erasing Flash Electrically Erasable Programmable Read-Only Memory (Eeprom )
Patent:
5,901,090 →
Application:
09/085,552 →
Method for Erasing Flash Electrically Erasable Programmable Read-Only Memory(Eeprom)
Patent:
6,157,572 →
Application:
09/085,680 →
Method for Programming Flash Electrically Erasable Programmable Read-Only Memory
Patent:
5,875,130 →
Application:
09/085,705 →
Rtcvd Oxide and N2O Anneal for Top Oxide of Ono Film
Patent:
6,063,666 →
Application:
09/098,292 →
Method for Sensing State of Erasure of a Flash Electrically Erasable Programmable Read-Only Memory (Eeprom)
Patent:
6,011,721 →
Application:
09/132,347 →
Method for Tightening Erase Threshold Voltage Distribution in Flash Electrically Erasable Programmable Read-Only Memory (Eeprom)
Patent:
6,052,310 →
Application:
09/132,981 →
Method for Reducing Program Disturb During Self-Boosting in a Nand Flash Memory
Patent:
5,991,202 →
Application:
09/161,423 →
Method for Erasing Flash Electrically Erasable Programmable Read-Only Memory (Eeprom)
Patent:
6,205,059 →
Application:
09/166,384 →
High Voltage Transistor with High Gated Diode Breakdown Voltage
Patent:
6,177,322 →
Application:
09/177,817 →
Eeprom Decoder Block Having a P-Well Coupled to a Charge Pump for Charging the P-Well and Method of Programming with the Eeprom Decoder Block
Patent:
6,081,455 →
Application:
09/232,023 →
Use of Implanted Ions to Reduce Oxide-Nitride-Oxide (Ono) Etch Residue and Polystringers
Patent:
6,221,768 →
Application:
09/257,733 →
Concurrent Erase Verify Scheme for Flash Memory Applications
Patent:
6,172,914 →
Application:
09/404,078 →
Bit by Bit Apde Verify for Flash Memory Applications
Patent:
6,122,198 →
Application:
09/413,182 →
Multiple Byte Channel Hot Electron Programming Using Ramped Gate and Source Bias Voltage
Patent:
6,275,415 →
Application:
09/416,563 →
Circuit Implementation to Quench Bit Line Leakage Current in Programming and Over-Erase Correction Modes in Flash Eeprom
Patent:
6,046,932 →
Application:
09/417,273 →
Method and System for Using a Spacer to Offset Implant Damage and Reduce Lateral Diffusion in Flash Memory Devices
Patent:
6,410,956 →
Application:
09/478,864 →
Related Assignments
(17)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Mar 19, 2007
From: ADVANCED MICRO DEVICES, INC.
To: SPANSION INC.
Reel/Frame 019028/0644 →
Security Agreement
Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
Release of Security Interest
Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036019/0156 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036019/0326 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036019/0518 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036017/0001 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036017/0473 →
Assignment of Assignor's Interest
Jun 26, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036017/0625 →
Assignment of Assignor's Interest
Jun 29, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036031/0355 →
Assignment of Assignor's Interest
Jun 29, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036031/0691 →
Assignment of Assignor's Interest
Jun 29, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036032/0154 →
Assignment of Assignor's Interest
Jun 29, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036030/0682 →
Assignment of Assignor's Interest
Jun 29, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036029/0370 →
Assignment of Assignor's Interest
Jun 29, 2015
From: SPANSION, LLC
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 036031/0001 →
Partial Release of Security Interest in Patents
Aug 11, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: CYPRESS SEMICONDUCTOR CORPORATION; SPANSION LLC
Reel/Frame 039708/0001 →
Assignment of Assignor's Interest
Dec 14, 2016
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MONTEREY RESEARCH, LLC
Reel/Frame 040911/0238 →