Patent Assignment
Reel/Frame 023774/0399
Assignment of Assignor's Interest
Recorded: 2010-01-13
Received: 2010-01-13
Pages: 386
Assignor
INFINEON TECHNOLOGIES NORTH AMERICA CORP
Executed: 2006-04-25
Assignee
QIMONDA AG
GUSTAV-HEINEMANN-RING 212, MUNICH, DEX, 81739, GERMANY
Covered Properties
(15)
Duty Cycle Corrector
Application:
11/271,015 →
Method of Forming an Alignment Mark Structure Using Standard Process Steps for Forming Vertical Gate Transistors
Application:
10/762,973 →
Multi-Bank Chip Compatible with a Controller Designed for a Lesser Number of Banks and Method of Operating
Application:
10/460,791 →
Use of Redundant Memory Cells to Manufacture Cost Efficient Drams with Reduced Self Refresh Current Capability
Application:
10/406,320 →
Lithography Method for Preventing Lithographic Exposure of Peripheral Region of Semiconductor Wafer
Application:
10/188,532 →
Transistor and Method of Manufacturing a Transistor Having a Shallow Junction Formation Using a Two Step Epi Layer
Application:
10/142,537 →
Field Effect Transistor and Method of Fabrication
Application:
10/066,206 →
Field Effect Transistor and Method of Fabrication
Application:
10/066,184 →
Twisted Bit-Line Compensation
Application:
10/034,625 →
Method of Forming an Alignment Mark Structure Using Standard Process Steps for Forming Vertical Gate Transistors
Application:
10/026,347 →
Segmented Write Line Architecture
Application:
10/016,859 →
Method for Forming Inside Nitride Spacer for Deep Trench Device Dram Cell
Application:
09/967,226 →
Serial Mram Device
Application:
09/967,662 →
Reference for Mram Cell
Application:
09/836,817 →
Metal Hard Mask for Ild Rie Processing of Semiconductor Memory Devices to Prevent Oxidation of Conductive Lines
Application:
09/824,596 →