Patent Assignment
Reel/Frame 027675/0686
Release of Security Interest
Recorded: 2012-02-09
Pages: 2
Assignor
SILICON VALLEY BANK
Executed: 2012-02-06
Assignee
UNITY SEMICONDUCTOR CORPORATION
255 SANTA ANA COURT, SUNNYVALE, CALIFORNIA, 94085
Covered Properties
(49)
Threshold Device for a Memory Array
Contemporaneous Margin Verification and Memory Access Fr Memory Cells in Cross Point Memory Arrays
Multi-Resistive State Memory Device with Conductive Oxide Electrodes
Solid State Drive with Non-Volatile Memory for a Media Device
Integrated Circults to Control Access to Multiple Layers of Memory in a Solid State Drive
Transient Storage Device Emulation Using Resistivity-Sensitive Memory
Serial Memory Interface
Four Vertically Stacked Memory Layers in a Non-Volatile Re-Writeable Memory
Device Fabrication
Memory Using Variable Tunnel Barrier Widths
Scaleable Memory Systems Using Third Dimension Memory
Two-Terminal Reversibly Switchable Memory Device
Application:
12/456,627 →
Publication:
US 2009/0303772
Multi-terminal reversibly switchable memory device
Application:
12/456,677 →
Publication:
US 2009/0303773
Array Operation Using a Schottky Diode as a Non-Ohmic Isolation Device
Memory Emulation Using Resistivity Sensitive Memory
Process for the Oxidative Dehydrogenation of Ethane
Third Dimensional Memory with Compress Engine
Configurable Memory Interface to Provide Serial and Parallel Access to Memories
Application:
12/587,841 →
Publication:
US 2010/0157644
Non-Volatile Fifo with Third Dimension Memory
Non-Volatile Dual Port Third Dimensional Memory
Columnar Replacement of Defective Memory Cells
Multi-Resistive State Memory Device with Conductive Oxide Electrodes
Memory Device with Band Gap Control
Conductive Metal Oxide Structures in Non-Volatile Re-Writable Memory Devices
Fuse Elements Based on Two-Terminal Re-Writeable Non-Volatile Memory
Memory Cell Formation Using Ion Implant Isolated Conductive Metal Oxide
Multi-structured memory
Application:
12/653,852 →
Publication:
US 2010/0161308
Multiple Layers of Memory Implemented as Different Memory Technology
Conductive Oxide Electrodes
Memory Stack Having Hydrogen Diffusion Prevention Cladding Layer Formed Thereon
Application:
12/653,859 →
Publication:
US 2010/0155723
Signal Margin Improvement for Read Operations in a Cross-Point Memory Array
Memory Scrubbing in Third Dimension Memory
Digital Potentiometer Using Third Dimensional Memory
Memory access circuits and layout of the same for cross-point memory arrays
Application:
12/653,898 →
Publication:
US 2010/0157647
High Voltage Switching Circuitry for a Cross-Point Array
Data storage system with non-volatile memory using both page write and block program and block erase
Application:
12/653,938 →
Publication:
US 2010/0161888
Data storage system with refresh in place
Application:
12/653,939 →
Publication:
US 2010/0195393
Buffering Systems for Accessing Multiple Layers of Memory in Integrated Circuits
Field Programmable Gate Arrays Using Resistivity Sensitive Memories
Programmable Logic Device Structure Using Third Dimensional Memory
Method of Making a Planar Electrode
Patent:
7,832,090 →
Application:
12/660,424 →
Low Read Current Architecture for Memory
Circuitry and Method for Indicating a Memory
Three-Dimensional Non-Volatile Register with an Oxygen-Ion-Based Memory Element and a Vertically-Stacked Register Logic
Preservation Circuit and Methods to Maintain Values Representing Data in One or More Layers of Memory
Continuous Plane of Thin-Film Materials for a Two-Terminal Cross-Point Memory
Performing Data Operations Using Non-Volatile Third Dimension Memory
Media Player with Non-Volatile Memory
Fast Data Access Through Page Manipulation
Related Assignments
(23)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Oct 22, 2008
From: SIAU, CHANG HUA, MR.; CHEVALLIER, CHRISTOPHE, MR.
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 021721/0918 →
Assignment of Assignor's Interest
Nov 11, 2008
From: RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE; HSIA, STEVE KUO-REN; KINNEY, WAYNE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 021815/0274 →
Assignment of Assignor's Interest
Apr 23, 2009
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 022590/0581 →
Assignment of Assignor's Interest
Apr 23, 2009
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 022590/0263 →
Assignment of Assignor's Interest
Apr 27, 2009
From: RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE J.; HSIA, STEVE KUO-REN
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 022653/0525 →
Assignment of Assignor's Interest
Apr 29, 2009
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 022614/0391 →
Assignment of Assignor's Interest
Apr 29, 2009
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 022614/0768 →
Assignment of Assignor's Interest
Jun 25, 2009
From: RINERSON, DARRELL; CHEUNG, ROBIN
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 022876/0358 →
Assignment of Assignor's Interest
Aug 31, 2009
From: RINERSON, DARRELL; LAMBERTSON, ROY; CHEVALLIER, CHRISTOPHE; WARD, EDMOND
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 023172/0778 →
Assignment of Assignor's Interest
Aug 31, 2009
From: RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE; LAMBERTSON, ROY; KINNEY, WAYNE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 023173/0163 →
Assignment of Assignor's Interest
Sep 16, 2009
From: LAMBERTSON, ROY; SCHLOSS, LAWRENCE
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 023241/0099 →
Assignment of Assignor's Interest
Oct 2, 2009
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 023322/0425 →
Assignment of Assignor's Interest
Oct 6, 2009
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 023334/0471 →
Assignment of Assignor's Interest
Nov 3, 2009
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 023464/0443 →
Assignment of Assignor's Interest
May 4, 2010
From: RINERSON, DARRELL; CHEVALLIER, CHRISTOPHE J; KINNEY, WAYNE; WARD, EDMOND
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 024333/0227 →
Assignment of Assignor's Interest
Jun 23, 2010
From: HAN, SCOTT; MARTENAK, DANIEL J.; JIN, LEI; SUIB, STEVEN LAWRENCE
To: ROHM AND HAAS COMPANY
Reel/Frame 024600/0118 →
Assignment of Assignor's Interest
Jul 12, 2010
From: NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 024667/0882 →
Security Agreement
Jan 25, 2011
From: UNITY SEMICONDUCTOR CORPORATION
To: SILICON VALLEY BANK
Reel/Frame 025710/0132 →
Release of Security Interest
Dec 12, 2013
From: SILICON VALLEY BANK; GOLD HILL VENTURE LENDING 03, LP
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 031774/0280 →
Assignment of Assignor's Interest
Apr 3, 2014
From: UNITY SEMICONDUCTOR CORPORATION
To: III HOLDINGS 1, LLC
Reel/Frame 032606/0079 →
Assignment of Assignor's Interest
Jul 5, 2018
From: III HOLDINGS 1, LLC
To: III HOLDINGS 3, LLC
Reel/Frame 046274/0626 →
Assignment of Assignor's Interest
Jan 29, 2019
From: III HOLDINGS 3, LLC
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 048167/0540 →
Assignment of Assignor's Interest
Jan 29, 2019
From: III HOLDINGS 3, LLC
To: SEAGATE TECHNOLOGY LLC
Reel/Frame 048167/0414 →