Patent Assignment
Reel/Frame 028597/0870
Release of Security Interest
Recorded: 2012-07-20
Pages: 6
Assignor
WELLS FARGO CAPITAL FINANCE, LLC
Executed: 2011-06-24
Assignee
SAMSUNG ELECTRONICS CO., LTD.
416 MAETAN-DONG, YEONGTONG-GU, SUWON-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Properties
(14)
Thin-Film Capacitors and Methods for Forming the Same
Patent:
6,180,976 →
Application:
09/241,728 →
Method for fabrication of ceramic tantalum nitride and improved structures based thereon
Patent:
6,251,796 →
Application:
09/512,397 →
Method for Selective Fabrication of High Capacitance Density Areas in a Low Dielectric Constant Material
Patent:
7,049,246 →
Application:
09/575,055 →
Method for Fabrication of Ceramic Tantalum Nitride and Imporoved Structures Based Thereon
Thin-film capacitors and methods for forming the same
High Density Composite Mim Capacitor with Reduced Voltage Dependence in Semiconductor Dies
Patent:
6,680,521 →
Application:
10/410,937 →
High Density Composite Mim Capacitor with Flexible Routing in Semiconductor Dies
Patent:
6,777,777 →
Application:
10/447,397 →
High-K Dielectric Stack in a Mim Capacitor and Method for Its Fabrication
Method for Fabricating a High Density Composite Mim Capacitor with Reduced Voltage Dependence in Semiconductor Dies
Patent:
7,041,569 →
Application:
10/712,067 →
Method for Fabricating a High Density Composite Mim Capacitor with Flexible Routing in Semiconductor Dies
Patent:
7,078,310 →
Application:
10/850,187 →
Selective Fabrication of High Capacitance Density Areas in a Low Dielectric Constant Material
Patent:
7,109,125 →
Application:
10/995,762 →
Method for Fabricating a Mim Capacitor Having Increased Capacitance Density and Related Structure
Method for Fabricating a Mim Capacitor High-K Dielectric for Increased Capacitance Density and Related Structure
Mim Capacitor High-K Dielectric for Increased Capacitance Density
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.