Method for improving implant uniformity during photoresist outgassing
View Patent ↗A method and apparatus is provided for improving implant uniformity of an ion beam experiencing pressure increase along the beam line. The method comprises generating a main scan waveform that moves an ion beam at a substantially constant velocity across a workpiece. A compensation waveform (e.g., quadratic waveform), having a fixed height and waveform, is also generated and mixed with the main scan waveform (e.g., through a variable mixer) to form a beam scanning waveform. The mixture ratio may be adjusted by an instantaneous vacuum pressure signal, which can be performed at much higher speed and ease than continuously modifying scan waveform. The mixture provides a beam scanning waveform comprising a non-constant slope that changes an ion beam's velocity as it moves across a workpiece. Therefore, the resultant beam scanning waveform, with a non-constant slope, is able to account for pressure non-uniformities in dose along the fast scan direction.
1. An ion implantation system, comprising:
a first wave generator configured to generate a main scan waveform having a substantially linear slope;
a second wave generator configured to generate a compensation waveform; and
an adder configured to provide a beam scanning waveform by adding the main scan waveform and the compensation waveform;
wherein the compensation waveform is selected to have a waveform and an amplitude that are configured to modify the slope of the main scan waveform in a manner that accounts for non-uniformities of a dose of an ion beam along a fast scan direction.
2. The ion implantation system of claim 1 , wherein the beam scanning waveform comprises a slope that causes the ion beam to gradually increase or decrease its speed as it moves across a workpiece.
3. The ion implantation system of claim 1 , wherein the compensation waveform comprises a quadratic waveform.
4. The ion implantation system of claim 1 , wherein the main scan waveform is substantially unaffected by pressure changes in the ion implantation system.
5. The ion implantation system of claim 1 , further comprising an adjustment apparatus coupled to the second wave generator and configured to adjust the amplitude of the compensation waveform by a mixture ratio.
6. The ion implantation system of claim 5 , wherein the adjustment apparatus comprises a variable compensation attenuator.
7. The ion implantation system of claim 5 , wherein the mixture ratio is determined based upon measurements taken from a first edge faraday cup and a second edge faraday cup located at opposite sides of the ion beam.
8. The ion implantation system of claim 5 , wherein the mixture ratio is determined based upon measurements taken from a pressure sensor located along a beam line.
9. The ion implantation system of claim 5 , wherein the adjustment apparatus is configured to dynamically modify the amplitude of the compensation waveform based upon a pressure measured at an end station.
10. The ion implantation system of claim 1 , wherein the waveform and the amplitude of the compensation waveform may be adjusted in response to substantially instantaneous pressure measurements received by the second wave generator.
11. A method for improving implant uniformity of an ion implantation system, comprising:
generating a main scan waveform having a piecewise linear slope;
generating a compensation waveform; and
adding the compensation waveform to the main scan waveform to produce a beam scanning waveform that is utilized to direct an ion implantation beam;
wherein the compensation waveform is selected to have a waveform and an amplitude that are configured to modify the slope of the main scan waveform in a manner that accounts for non-uniformities of a dose of an ion beam along a fast scan direction.
12. The method of claim 11 , further comprising adjusting the amplitude of the compensation waveform to vary a mixture ratio between the main scan waveform and the compensation waveform.
13. The method of claim 12 , wherein the compensation waveform comprises a quadratic waveform.
14. The method of claim 13 , wherein the quadratic waveform is of a form of V2(t)=at*(t−1 1/2 ).
15. The method of claim 12 , wherein the mixture ratio is determined based upon measurements taken from a first edge faraday cup located at an edge of the ion beam and a second edge faraday cup located at an opposite edge of the ion beam.
16. The method of claim 12 , wherein the amplitude of the compensation waveform may be adjusted proportional to an amplitude of the main scan waveform so that a maximum mixture ratio of the compensation waveform stays constant irrespective of the amplitude of the main scan waveform.
17. The method of claim 12 , wherein the mixture ratio is determined based upon measurements taken from a pressure sensor located along a beam line.
18. The method of claim 12 , wherein the method is embodied on a computer readable medium.
19. The method of claim 11 , wherein the beam scanning waveform comprises a slope that causes the ion beam to gradually increase or decrease its speed as it moves across a workpiece.
20. An ion implantation system, comprising:
a first wave generator configured to generate a main scan waveform having a substantially piecewise linear slope that is configured to provide a substantially uniform ion beam scanning velocity over a workpiece;
a second wave generator configured to generate a compensation waveform; and
an adder configured to provide a beam scanning waveform to a beam scanning apparatus, wherein the beam scanning waveform is formed by adding the main scan waveform and the compensation waveform;
wherein the compensation waveform is selected to have a waveform and an amplitude configured to modify the slope of the main scan waveform in response to substantially instantaneous pressure measurements received by the second wave generator;
and wherein the beam scanning waveform comprises a non-linear slope that causes an ion beam to increase or decrease its speed as it moves across the workpiece.