Semiconductor device and method of forming repassivation layer with reduced opening to contact pad of semiconductor die
View Patent ↗A semiconductor wafer has a plurality of first semiconductor die. A first conductive layer is formed over an active surface of the die. A first insulating layer is formed over the active surface and first conductive layer. A repassivation layer is formed over the first insulating layer and first conductive layer. A via is formed through the repassivation layer to the first conductive layer. The semiconductor wafer is singulated to separate the semiconductor die. The semiconductor die is mounted to a temporary carrier. An encapsulant is deposited over the semiconductor die and carrier. The carrier is removed. A second insulating layer is formed over the repassivation layer and encapsulant. A second conductive layer is formed over the repassivation layer and first conductive layer. A third insulating layer is formed over the second conductive layer and second insulating layer. An interconnect structure is formed over the second conductive layer.
1. A semiconductor device, comprising:
a semiconductor wafer including a plurality of semiconductor die;
a first contact pad formed on a surface of the semiconductor die;
an insulating layer formed over the semiconductor die and first contact pad;
a passivation layer formed over the insulating layer and first contact pad; and
a conductive via formed through the passivation layer and extending to the first contact pad.
2. The semiconductor device of claim 1 , further including an interconnect structure formed over the passivation layer.
3. The semiconductor device of claim 1 , further including an opening formed in the insulating layer.
4. The semiconductor device of claim 3 , wherein a width of the opening is greater than a width of the conductive via.
5. The semiconductor device of claim 3 , wherein the passivation layer extends through the opening and to the first contact pad.
6. The semiconductor device of claim 1 , further including a conductive layer disposed between the passivation layer and insulating layer.
7. A semiconductor device, comprising:
a semiconductor die;
a first conductive layer formed on the semiconductor die;
a first insulating layer formed over the semiconductor die and first conductive layer;
a second insulating layer formed over the first insulating layer and first conductive layer; and
a via formed through the second insulating layer and extending to the first conductive layer.
8. The semiconductor device of claim 7 , further including an interconnect structure formed over the second insulating layer.
9. The semiconductor device of claim 7 , further including an opening formed in the first insulating layer.
10. The semiconductor device of claim 9 , wherein a width of the opening is greater than a width of the via.
11. The semiconductor device of claim 9 , wherein the second insulating layer extends through the opening and to the first conductive layer.
12. The semiconductor device of claim 7 , further including a second conductive layer disposed between the first insulating layer and second insulating layer.
13. The semiconductor device of claim 7 , further including a second conductive layer formed in the via.
14. A semiconductor device, comprising:
a first conductive layer;
a first insulating layer formed over the first conductive layer;
a second insulating layer formed over the first insulating layer; and
a via formed through the second insulating layer exposing the first conductive layer.
15. The semiconductor device of claim 14 , further including an interconnect structure formed over the second insulating layer.
16. The semiconductor device of claim 14 , further including an opening formed in the first insulating layer.
17. The semiconductor device of claim 16 , wherein a width of the opening is greater than a width of the via.
18. The semiconductor device of claim 14 , further including a second conductive layer disposed in the via.
19. The semiconductor device of claim 18 , further including a third conductive layer formed over the second conductive layer.
20. A semiconductor device, comprising:
a conductive layer;
a first insulating layer formed over a surface of the conductive layer;
a second insulating layer formed over the first insulating layer and conductive layer; and
a via extending through the second insulating layer to the surface of the conductive layer.
21. The semiconductor device of claim 20 , further including an interconnect structure formed over the second insulating layer.
22. The semiconductor device of claim 20 , further including an opening formed in the first insulating layer.
23. The semiconductor device of claim 22 , wherein a width of the opening is greater than a width of the via.
24. The semiconductor device of claim 22 , wherein the second insulating layer extends through the opening and to the conductive layer.
25. The semiconductor device of claim 20 , further including a substrate disposed over the conductive layer and the first insulating layer.