Reflection mask for EUV-lithography and method for fabricating the reflection mask

1. A reflection mask for photolithography, comprising:

a first multilayer layer for reflecting radiated-in radiation by constructive interference of reflected partial beams; and

a second multilayer layer having a periodicity effecting a destructive interference of the reflected partial beams and leading to a local absorption of the radiated-in radiation by said second multilayer layer.

2. The reflection mask according to claim 1 , further comprising a substrate, said first multilayer layer being an unpatterned multilayer layer for the constructive interference of the reflected partial beams and disposed on said substrate, and said second multilayer being a patterned multilayer layer for the destructive interference of the reflected partial beams and disposed on said first multilayer layer.

3. The reflection mask according to claim 2 , further comprising a buffer layer lying between said unpatterned and patterned multilayer layers.

4. The reflection mask according to claim 3 , further comprising a further patterned buffer layer lying on said patterned multilayer layer and said further patterned buffer layer serving as an etching mask for the patterning of said patterned multilayer layer and is useful for defect repair.

5. The reflection mask according to claim 1 , further comprising a substrate, said second multilayer layer being an unpatterned multilayer layer for the destructive interference of the reflected partial beams and disposed on said substrate, said first multilayer layer being a patterned multilayer layer for the constructive interference of the reflected partial beams and disposed on said second multilayer layer.

6. The reflection mask according to claim 5 , further comprising a buffer layer lying between said unpatterned and patterned multilayer layers.

7. The reflection mask according to claim 6 , further comprising a further patterned buffer layer lying on said patterned multilayer layer and said further patterned buffer layer serving as an etching mask for the patterning of said patterned multilayer layer and is useful for defect repair.

8. A method for fabricating a reflection mask according to claim 1 , which comprises the steps of:

providing a substrate;

applying a first multilayer layer to the substrate;

applying a second multilayer layer on the first multilayer layer;

forming a photoresist structure on the second multilayer layer;

patterning the second multilayer layer using the photoresist structure as a mask resulting in a second, patterned multilayer layer; and

removing the photoresist structure.

9. The method according to claim 8 , which comprises providing the first multilayer layer for a constructive interference of reflected partial beams and the second, patterned multilayer layer for a destructive interference of the reflected partial beams.

10. The method according to claim 9 , which comprises forming a buffer layer between the first multilayer layer and the second multilayer layer.

11. The method according to claim 8 , which comprises:

forming a first buffer layer after an application of the first multilayer layer on the first multilayer layer; and

forming a second buffer layer formed after an application of the second multilayer layer on the second multilayer layer.

12. The method according to claim 8 , which comprises providing the first multilayer layer for a destructive interference of reflected partial beams and the second, patterned multilayer layer for a constructive interference of the reflected partial beams.

13. The method according to claim 12 , which comprises forming a buffer layer between the first multilayer layer and the second multilayer layer.