Semiconductor memory array of floating gate memory cells with buried source line and floating gate
View Patent ↗A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed underneath the trench, and the channel region includes a first portion extending vertically along a sidewall of the trench and a second portion extending horizontally along the substrate surface. An electrically conductive floating gate is disposed in the trench adjacent to and insulated from the channel region first portion. An electrically conductive control gate is disposed over and insulated from the channel region second portion. A block of conductive material has at least a lower portion thereof disposed in the trench adjacent to and insulated from the floating gate, and can be electrically connected to the source region.
1. An electrically programmable and erasable memory device comprising:
a substrate of semiconductor material having a first conductivity type and a horizontal surface;
a trench formed into the surface of the substrate;
first and second spaced-apart regions formed in the substrate and having a second conductivity type, with a channel region formed in the substrate therebetween, wherein the first region is formed underneath the trench, and the channel region includes a first portion that extends substantially along a sidewall of the trench and a second portion that extends substantially along the surface of the substrate;
an electrically conductive floating gate having at least a lower portion thereof disposed in the trench adjacent to and insulated from the channel region first portion for controlling a conductivity of the channel region first portion; and
an electrically conductive control gate disposed over and insulated from the channel region second portion for controlling a conductivity of the channel region second portion, wherein there is at most only a partial vertical overlap between the control gate and the floating gate.
2. The device of claim 1 , further comprising:
a block of conductive material having at least a lower portion thereof disposed in the trench adjacent to and insulated from the floating gate.
3. The device of claim 2 , wherein the conductive material block is electrically connected to the first region.
4. The device of claim 2 , wherein the control gate is disposed adjacent to the floating gate and insulated therefrom with insulation material having a thickness that permits Fowler-Nordheim tunneling.
5. The device of claim 2 , further comprising:
a spacer of insulating material disposed between the control gate and the block of conductive material, and over the floating gate.
6. The device of claim 1 , wherein:
the floating gate includes an upper portion that extends above the substrate surface;
the control gate has a first portion that is disposed laterally adjacent to and insulated from the floating gate upper portion; and
the control gate has a second portion that is disposed over and insulated from the floating gate upper portion.
7. The device of claim 6 , wherein:
the control gate includes a notch formed by the first and second portions thereof; and
the floating gate upper portion includes an edge that faces the notch.
8. The device of claim 7 , wherein the control gate is a spacer of conductive material.
9. The device of claim 1 , wherein the floating gate is a spacer of conductive material.
10. The device of claim 1 , wherein the channel region first and second portions are non-linear with respect to each other, with the channel region second portion extending in a direction directly toward the floating gate to define a path for programming the floating gate.
11. An array of electrically programmable and erasable memory devices comprising:
a substrate of semiconductor material having a first conductivity type and a surface;
spaced apart isolation regions formed on the substrate which are substantially parallel to one another and extend in a first direction, with an active region between each pair of adjacent isolation regions; and
each of the active regions including a plurality of pairs of memory cells, wherein each of the memory cell pairs comprises:
a trench formed into the surface of the substrate and including a pair of opposing sidewalls,
a first region formed in the substrate underneath the trench,
a pair of second regions formed in the substrate, with a pair of channel regions each formed in the substrate between the first region and one of the second regions, wherein the first and second regions have a second conductivity type, and wherein each of the channel regions includes a first portion that extends substantially along one of the opposing trench sidewalls and a second portion that extends substantially along the substrate surface,
a pair of electrically conductive floating gates each having at least a lower portion thereof disposed in the trench adjacent to and insulated from one of the channel region first portions for controlling a conductivity of the one channel region first portion, and
a pair of electrically conductive control gates each disposed over and insulated from one of the channel region second portions for controlling a conductivity of the one channel region second portion, wherein there is at most only a partial vertical overlap between the control gates and the floating gates.
12. The array of claim 11 , wherein each of the memory cell pairs further comprises:
a block of conductive material having at least a lower portion thereof disposed in the trench adjacent to and insulated from the pair of floating gates.
13. The array of claim 12 , wherein each of the conductive material blocks is electrically connected to one of the first regions.
14. The array of claim 12 , wherein each of the control gates is disposed adjacent to one of the floating gates and insulated therefrom with insulation material having a thickness that permits Fowler-Nordheim tunneling.
15. The array of claim 12 , wherein each of the memory cell pairs further comprises:
a pair of spacers of insulating material each disposed between the block of conductive material and one of the control gates, and over one of the floating gates.
16. The array of claim 11 , wherein:
each of the floating gates includes an upper portion that extends above the substrate surface;
each of the control gates has a first portion that is disposed laterally adjacent to and insulated from one of the floating gate upper portions; and
each of the control gates has a second portion that is disposed over and insulated from one of the floating gate upper portions.
17. The array of claim 16 , wherein:
each of the control gates includes a notch formed by the first and second portions thereof; and
each of the floating gate upper portions includes an edge that faces one of the notches.
18. The array of claim 17 , wherein each of the control gates is a spacer of conductive material.
19. The array of claim 11 , wherein each of the floating gates is a spacer of conductive material.
20. The array of claim 11 , wherein first and second portions for each of the channel regions are non-linear with respect to each other, with each of the channel region second portions extending in a direction directly toward one of the floating gates to define a path for programming the one floating gate.
21. The array of claim 11 , further comprising:
a plurality of conductive control lines of conductive material each extending across the active and isolation regions in a second direction perpendicular to the first direction and each electrically connecting together one of the control gates from each of the active regions.
22. The array of claim 13 , further comprising:
a plurality of conductive source lines of conductive material each extending across the active and isolation regions in a second direction perpendicular to the first direction and each electrically connecting together one of the conductive blocks from each of the active regions.