Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
View Patent ↗Ammonia-free cleaning compositions for cleaning microelectronic substrates, and particularly to such cleaning compositions useful with and having improved compatibility with microelectronic substrates characterized by sensitive porous, low-κ and high-κ dielectrics and copper metallization. Cleaning compositions for stripping photoresists, cleaning residues from plasma generated organic, organometallic and inorganic compounds, and cleaning residues from planarization processes. The cleaning composition contain one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions and one or more steric hindered amide solvents.
1. A cleaning composition having the property of being capable of cleaning residues from microelectronic substrates having on the substrate (1) a dielectric that is a porous dielectric, a low-κ dielectric or a high-κ dielectric, and (2) copper metallization, said cleaning composition is a silicate free composition and consists of:
from about 0.05% to 30% by weight of one or more non-ammonia producing strong base containing non-nucleophilic, positively charged counter ions;
from about 5 to about 99.95% by weight of dimethyl piperidone;
from about 0 to about 95% by weight water or other organic co-solvent;
from about 0 to 40% by weight of an other metal corrosion inhibitor compounds;
from 0 to 5% by weight of a surfactant;
from about 0 to about 5% by weight of a metal chelating agent selected from the group consisting of trans-1,2-cyclohexanediamine tetraacetic acid and ethylenediamine tetra(methylene phosphonic acid); and
from about 0 to 10% by weight of a fluoride compound;
wherein the water or other organic co-solvent consists of water or at least one other organic co-solvent selected from the group consisting of dimethyl sulfoxide, sulfolane, diethanolamine, triethanolamine, 2-(methylamino)ethanol and 3-(diethylamino)-1,2-propanediol.
2. A cleaning composition of claim 1 wherein the non-ammonia producing strong base is a tetraalkylammonium hydroxide or salt thereof.
3. A cleaning composition of claim 2 wherein the tetraalkylammonium hydroxide or salt is a compound of the formula:
[(R) 4 N + ] p [X] −q
wherein each R is a substituted or unsubstituted alkyl group and X is OH or a salt anion; and p and q are equal and are integers of from 1 to 3.
4. A cleaning composition of claim 3 wherein R is an alkyl group containing 1 to 22 carbon atoms and X is OH or carbonate.
5. A cleaning composition of claim 4 wherein R is an alkyl group of from 1 to 6 carbon atoms.
6. A cleaning composition of claim 1 consisting of tetramethylammoniun hydroxide, dimethyl piperidone, triethanolamine, trans-1,2-cyclohexanediamine tetraacetic acid and water.
7. A cleaning composition of claim 1 consisting of tetramethylammoniun hydroxide, dimethyl piperidone and water.
8. A cleaning composition of claim 1 consisting of tetramethylammoniun hydroxide, dimethyl piperidone, triethanolamine, ethylenediamine tetra(methylene phosphonic acid) and water.
9. A process for cleaning a microelectronic substrate having (1) a dielectric that is a porous dielectric, a low-κ dielectric, or a high-κ dielectric, and (2) copper metallization, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the substrate, wherein the cleaning composition consists of the composition of claim 2 .
10. A process for cleaning a microelectronic substrate having (1) a dielectric that is a porous dielectric, a low-κ dielectric, or a high-κ dielectric, and (2) copper metallization, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the substrate, wherein the cleaning composition consists of the composition of claim 3 .
11. A process for cleaning a microelectronic substrate having (1) a dielectric that is a porous dielectric, a low-κ dielectric, or a high-κ dielectric, and (2) copper metallization, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the substrate, wherein the cleaning composition consists of the composition of claim 4 .
12. A process for cleaning a microelectronic substrate having (1) a dielectric that is a porous dielectric, a low-κ dielectric, or a high-κ dielectric, and (2) copper metallization, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the substrate, wherein the cleaning composition consists of the composition of claim 5 .
13. A process for cleaning a microelectronic substrate having (1) a dielectric that is a porous dielectric, a low-κ dielectric, or a high-κ dielectric, and (2) copper metallization, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the substrate, wherein the cleaning composition consists of the composition of claim 1 .
14. A process for cleaning a microelectronic substrate having (1) a dielectric that is a porous dielectric, a low-κ dielectric, or a high-κ dielectric, and (2) copper metallization, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the substrate, wherein the cleaning composition consists of the composition of claim 6 .
15. A process for cleaning a microelectronic substrate having (1) a dielectric that is a porous dielectric, a low-κ dielectric, or a high-κ dielectric, and (2) copper metallization, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the substrate, wherein the cleaning composition consists of the composition of claim 7 .
16. A process for cleaning a microelectronic substrate having (1) a dielectric that is a porous dielectric, a low-κ dielectric, or a high-κ dielectric, and (2) copper metallization, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the substrate, wherein the cleaning composition consists of the composition of claim 8 .