Microelectronic cleaning and arc remover compositions
View Patent ↗Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k di-electrics and copper or aluminum metallizations contain a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols and a strong alkaline base.
1. A silicate free cleaning composition that is stable in strong alkaline conditions of pH >9 and in the presence of H 2 O 2 and capable of cleaning photoresist and residues from microelectronic substrates having copper metallization and a porous or non-porous low-κ or high-κ dielectric, said cleaning composition being stable when in the presence of hydrogen peroxide oxidizing agent, said composition consisting essentially of:
from about 10 to about 90% by weight of a polar organic solvent having hydrogen bonding capability and minimally or non-reactive with an oxidizing agent, wherein the polar organic solvent is selected from the group consisting of dimethylpiperidone, sulfones, and sulfolanes;
from about 0.1 to about 10% by weight of a member selected from the group consisting of a tetraalkylammonium hydroxide, choline hydroxide, sodium hydroxide, and potassium hydroxide;
from about 10 to about 60% water; and
from about 0.1 to about 5% by weight a chelating or metal complexing agent selected from the group consisting of trans-1,2-cyclohexanediamine tetraacetic acid, ethane-1-hydroxy-1,1-diphosphonate and ethylenediamine tetra(methylene phosphonic acid).
2. A cleaning composition according to claim 1 wherein the polar organic solvent is sulfolane and the chelating or metal complexing agent is trans-1,2-cyclohexanediamine tetraacetic acid.
3. The cleaning composition according to claim 2 consisting essentially of sulfolane, tetramethylammonium hydroxide, trans-1,2-cyclohexanediamine tetraacetic acid and water.
4. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition consists essentially of a composition of claim 2 .
5. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition consists essentially of a composition of claim 3 .
6. The cleaning composition according to claim 1 consisting essentially of dimethylpiperidone, trans-1,2-cyclohexanediamine tetraacetic acid, tetramethylammonium hydroxide and water.
7. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition consists essentially of a composition of claim 1 .
8. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition consists essentially of a composition of claim 6 .
9. A silicate free cleaning composition that is stable in strong alkaline conditions of pH >9 and in the presence of H 2 O 2 and capable of cleaning photoresist and residues from microelectronic substrates having copper metallization and a porous or non-porous low-κ or high-κ dielectric, said cleaning composition being stable when in the presence of hydrogen peroxide oxidizing agent, said composition consisting of:
from about 10 to about 90% by weight of a polar organic solvent having hydrogen bonding capability and minimally or non-reactive with an oxidizing agent, wherein the polar organic solvent is selected from the group consisting of dimethylpiperidone, sulfones, and sulfolanes;
from about 0.1 to about 10% by weight of a member selected from the group consisting of a tetraalkylammonium hydroxide, choline hydroxide, sodium hydroxide, and potassium hydroxide;
from about 10 to about 60% water; and
from about 0.1 to about 5% by weight a chelating or metal complexing agent selected from the group consisting of trans-1,2-cyclohexanediamine tetraacetic acid, ethane-1-hydroxy-1,1-diphosphonate and ethylenediamine tetra(methylene phosphonic acid).
10. The cleaning composition according to claim 9 consisting of sulfolane, tetramethylammonium hydroxide, trans-1,2-cyclohexanediamine tetraacetic acid and water.
11. The cleaning composition according to claim 9 consisting of dimethylpiperidone, trans-1,2-cyclohexanediamine tetraacetic acid, tetramethylammonium hydroxide and water.
12. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition consists of a composition of claim 9 .
13. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition consists of a composition of claim 10 .
14. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition consists of a composition of claim 11 .