Microelectronic cleaning compositions containing oxidizers and organic solvents
View Patent ↗Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k dielectrics and copper or aluminum metallizations contain an oxidizing agent and a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols, and optionally other components.
1. A cleaning composition capable of cleaning photoresist and residues from microelectronic substrates, said cleaning composition consisting essentially of:
from about 0.1 to about 30% by weight of hydrogen peroxide as an oxidizing agent;
from about 10 to about 99% by weight of sulfolane as a polar organic solvent having hydrogen bonding capability and minimally or non-reactive with the oxidizing agent;
from more than 0 to about 30% by weight of an tetramethylammonium hydroxide as an alkaline base;
0.1 to 5% by weight of trans-1,2-cyclohexanediamine tetraacetic acid as a chelating or metal complexing agent; and
from about 0.1 to about 98% by weight water.
2. A cleaning composition capable of cleaning photoresist and residues from microelectronic substrates, said cleaning composition consisting essentially of:
from about 0.1 to about 30% by weight of hydrogen peroxide as anoxidizing agent;
from about 10 to about 99% by weight of sulfolane as a polar organic solvent having hydrogen bonding capability and minimally or non-reactive with the oxidizing agent;
from more than 0 to about 30% by weight of an tetramethylammonium hydroxide as an alkaline base;
0.1 to 5% by weight of ethylenediamine tetra(methylene phosphonic acid) as a chelating or metal complexing agent; and
from about 0.1 to about 98% by weight water.
3. A cleaning composition capable of cleaning photoresist and residues from microelectronic substrates, said cleaning composition consisting of:
from about 0.1 to about 30% by weight of hydrogen peroxide as an oxidizing agent;
from about 1 to about 90% by weight of sulfolane as a polar organic solvent having hydrogen bonding capability and minimally or non-reactive with the oxidizing agent;
from more than 0 to about 30% by weight of tetramethylammonium hydroxide as an Alkaline base;
0.1 to 5% by weight of trans-1,2-cyclohexanediamine tetraacetic acid as a chelating or metal complexing agent; and
from about 0.1 to about 98% by weight water.
4. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition comprises a composition of claim 1 .
5. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition comprises a composition of claim 2 .
6. A process for cleaning photoresist or residue from a microelectronic substrate, the process comprising contacting the substrate with a cleaning composition for a time sufficient to clean the photoresist and residue from the substrate, wherein the cleaning composition comprises a composition of claim 3 .
7. A process according to claim 4 wherein the microelectronic structure being cleaned is characterized by the presence of copper metallization and a dielectric selected from the group consisting of silicon dioxide, a low-κ dielectric and a high-κ dielectric.
8. A process according to claim 5 wherein the microelectronic structure being cleaned is characterized by the presence of copper metallization and a dielectric selected from the group consisting of silicon dioxide, a low-κ dielectric and a high-κ dielectric.
9. A process according to claim 6 wherein the microelectronic structure being cleaned is characterized by the presence of copper metallization and a dielectric selected from the group consisting of silicon dioxide, a low-κ dielectric and a high-κ dielectric.