IP Library Granted Patent US 7,749,690
Granted Patent B2
US 7,749,690 · App. 10/883,316 · Granted Jul 6, 2010

Die identification systems and methods

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Quick Facts
Patent No.
US 7,749,690
App. No.
10/883,316
Granted
Jul 6, 2010
Kind
B2
Abstract

Systems and methods are disclosed herein to provide die identification. For example, in accordance with an embodiment of the present invention, a wafer patterning technique is disclosed that provides multiple-exposure patterning to provide a unique identifying mark for each die on a wafer.

Claims (18)

1. A method of providing identifying marks to die on a wafer, the method comprising:

providing an identification pattern on a first layer of the die; and

providing a marker on a second layer of the die using a multiple-exposure patterning process for the second layer, the second layer applied subsequent to the first layer, wherein a location of the marker relative to the identification pattern for each of the die indicates a corresponding location of the die on the wafer such that the corresponding location is known after separation of the die from the wafer, and wherein the providing of the marker comprises; applying a first image to the second layer except for a region above the identification pattern; and applying a second image to the second layer in the region above the identification pattern to provide the marker.

2. The method of claim 1 , wherein the identification pattern comprises a grid having a number of columns and a number of rows, the location of the marker at an intersection of one of the columns and one of the rows corresponds to the location of the die in a corresponding column and a corresponding row on the wafer.

3. The method of claim 1 , wherein the is formed of photoresist marker.

4. The method of claim 1 , wherein the applying the second image to provide the marker is performed in a different photo resist exposure pass for the second layer than the applying the first image to the second layer.

5. An integrated circuit comprising:

a die having at least a first layer and a second layer;

an identification pattern on the first layer of the die; and

a marker on the second layer of the die, wherein a location of the marker relative to the identification pattern indicates a corresponding location of the die on a wafer from which the die was separated; wherein the first and second layers are metal layers, the second layer above the first layer, and wherein the integrated circuit comprises: a circuit pattern on the second layer of the die, wherein the circuit pattern is on a portion of the second layer that is not directly over the identification pattern on the first layer of the die; and wherein the marker on the second layer of the die is positioned directly over the identification pattern on the first layer of the die, with the circuit pattern and the marker formed by a multiple-pass exposure process for the second layer.

6. The integrated circuit of claim 5 , wherein the identification pattern comprises a grid having a number of columns and a number of rows, the location of the marker at an intersection of one of the columns and one of the rows corresponds to the location of the die in a corresponding column and a corresponding row on the wafer from which the die was separated.

7. The integrated circuit of claim 5 , wherein the marker is made of photo resist second layer above the first layer, and wherein the integrated circuit further comprises.

8. An integrated circuit comprising:

a die having at least a first layer; and a marker on a second layer of the die; and

an identification pattern formed from photo resist on the first layer, wherein a location of the marker relative to the identification pattern indicates a previous location of the die on a wafer; wherein the marker on the second layer of the die is positioned relative to the identification pattern on the first layer of the die to provide the location of the die on the wafer from which the die was separated, and wherein the second layer of the die further includes a circuit pattern disposed on a portion of the second layer so as to not obscure the identification pattern on the first layer of the die relative to the marker on the second layer of the die.

9. The integrated circuit of claim 8 , wherein the identification pattern comprises a marker, a number, a character, a letter, and/or a grid.

10. The integrated circuit of claim 8 , wherein the identification pattern was formed during a multiple-exposure patterning.

11. The integrated circuit of claim 10 , wherein the marker is formed from photo resist.

Assignments (15)
RELEASE OF SECURITY INTEREST IN PATENTS RECORDED AT REEL 038620, FRAME 0087 Recorded Jun 22, 2023
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; FAIRCHILD SEMICONDUCTOR CORPORATION
Reel/Frame 064070/0001 →
MERGER AND CHANGE OF NAME Recorded Nov 24, 2021
From: FLIR SYSTEMS, INC.; FIREWORK MERGER SUB II, LLC
To: TELEDYNE FLIR, LLC
Reel/Frame 058832/0915 →
CORRECTIVE ASSIGNMENT TO CORRECT THE INCORRECT PATENT NUMBER 5859768 AND TO RECITE COLLATERAL AGENT ROLE OF RECEIVING PARTY IN THE SECURITY INTEREST PREVIOUSLY RECORDED ON REEL 038620 FRAME 0087. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Aug 25, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 039853/0001 →
RELEASE OF SECURITY INTEREST Recorded May 6, 2016
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT AND COLLATERAL AGENT
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038631/0345 →
RELEASE OF SECURITY INTEREST Recorded May 6, 2016
From: JPMORGAN CHASE BANK, N.A. (ON ITS BEHALF AND ON BEHALF OF ITS PREDECESSOR IN INTEREST, CHASE MANHATTAN BANK)
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 038632/0074 →
SECURITY INTEREST Recorded Apr 15, 2016
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 038620/0087 →
RELEASE OF SECURITY INTEREST Recorded Apr 1, 2016
From: JPMORGAN CHASE BANK, N.A.
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; AMIS HOLDINGS, INC.; AMI SEMICONDUCTOR, INC.; AMIS FOREIGN HOLDINGS INC.; AMI ACQUISITION LLC
Reel/Frame 038171/0254 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2012
From: INDIGO SYSTEMS CORPORATION
To: FLIR SYSTEMS, INC.
Reel/Frame 029119/0516 →
TERMINATION OF SECURITY INTEREST IN PATENTS RECORDED AT REEL/FRAME 18420/502 Recorded Feb 9, 2011
From: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
To: INDIGO SYSTEMS CORPORATION
Reel/Frame 025775/0661 →
PURCHASE AGREEMENT DATED 28 FEBRUARY 2009 Recorded May 14, 2010
From: AMI SEMICONDUCTOR
To: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Reel/Frame 024388/0272 →
SECURITY AGREEMENT Recorded Jun 23, 2008
From: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC; AMIS HOLDINGS, INC.; AMI SEMICONDUCTOR, INC.; AMIS FOREIGN HOLDINGS INC.; AMI ACQUISITION LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 021138/0070 →
PATENT RELEASE Recorded Mar 21, 2008
From: CREDIT SUISSE
To: AMI SEMICONDUCTOR, INC.
Reel/Frame 020679/0505 →
NOTICE OF GRANT OF SECURITY INTEREST Recorded Oct 24, 2006
From: INDIGO SYSTEMS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 018420/0502 →
SECURITY INTEREST Recorded Jun 1, 2005
From: AMI SEMICONDUCTOR, INC.
To: CREDIT SUISSE (F/K/A CREDIT SUISEE FIRST BOSTON), AS COLLATERAL AGENT
Reel/Frame 016290/0206 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 30, 2004
From: WOOLAWAY, JAMES T.; KINCAID, GLENN T.; KURTH, ERIC A.; ZAUSCH, ROBERT F.; WILLIAMS, GLENN E.
To: INDIGO SYSTEMS CORPORATION; AMI SEMICONDUCTOR
Reel/Frame 015582/0102 →