Non-planar non-volatile memory cell with an erase gate, an array therefor, and a method of making same
View Patent ↗A memory cell has a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed underneath the trench, and the channel region includes a first portion extending vertically along a sidewall of the trench and a second portion extending horizontally along the substrate surface. An electrically conductive floating gate is disposed in the trench adjacent to and insulated from the channel region first portion. An electrically conductive control gate is disposed over and insulated from the channel region second portion. An erase gate is disposed in the trench adjacent to and insulated from the floating gate. A block of conductive material has at least a lower portion thereof disposed in the trench adjacent to and insulated from the erase gate, and electrically connected to the source region.
1. An electrically programmable and erasable memory device comprising:
a substrate of semiconductor material having a first conductivity type and a horizontal surface;
a trench formed into the surface of the substrate;
first and second spaced-apart regions formed in the substrate and having a second conductivity type, with a channel region formed in the substrate therebetween, wherein the first region is formed underneath the trench, and the channel region includes a first portion that extends substantially along a sidewall of the trench and a second portion that extends substantially along the surface of the substrate;
an electrically conductive floating gate having at least a lower portion thereof disposed in the trench adjacent to and insulated from the channel region first portion for controlling a conductivity of the channel region first portion;
an electrically conductive erase gate having at least a lower portion thereof disposed in the trench adjacent to and insulated from the floating gate; and
an electrically conductive control gate disposed over and insulated from the channel region second portion for controlling a conductivity of the channel region second portion.
2. The device of claim 1 , wherein the channel region first and second portions are non-linear with respect to each other, with the channel region second portion extending in a direction directly toward the floating gate to define a path for programming the floating gate.
3. The device of claim 2 , further comprising:
a block of conductive material having at least a lower portion thereof disposed in the trench adjacent to and insulated from the erase gate.
4. The device of claim 3 , wherein the conductive material block is electrically connected to the first region.
5. The device of claim 2 , wherein the erase gate is disposed adjacent to the floating gate and insulated therefrom with insulation material having a thickness that permits Fowler-Nordheim tunneling.
6. The device of claim 2 , further comprising:
said floating gate having a tip directed to said erase gate for facilitating the removal of charges from the floating gate to the erase gate.
7. The device of claim 6 , wherein the erase gate extends into the trench and is substantially of the same length as the length of an adjacent floating gate.
8. The device of claim 6 , wherein the erase gate extends into the trench and is substantially shorter than the length of an adjacent floating gate.
9. The device of claim 6 wherein said erase gate is of a conductive material.
10. The device of claim 9 , wherein the control gate is of a conductive material.
11. The device of claim 1 , wherein the floating gate is of a conductive material.
12. An array of electrically programmable and erasable memory devices comprising:
a substrate of semiconductor material having a first conductivity type and a surface;
spaced apart isolation regions formed on the substrate which are substantially parallel to one another and extend in a first direction, with an active region between each pair of adjacent isolation regions; and
each of the active regions including a plurality of pairs of memory cells, wherein each of the memory cell pairs comprises:
a trench formed into the surface of the substrate and including a pair of opposing sidewalls;
a first region formed in the substrate underneath the trench;
a pair of second regions formed in the substrate, with a pair of channel regions each formed in the substrate between the first region and one of the second regions, wherein the first and second regions have a second conductivity type, and wherein each of the channel regions includes a first portion that extends substantially along one of the opposing trench sidewalls and a second portion that extends substantially along the substrate surface;
a pair of electrically conductive floating gates each having at least a lower portion thereof disposed in the trench adjacent to and insulated from one of the channel region first portions for controlling a conductivity of the one channel region first portion;
a pair of electrically conductive erase gates each having at least a lower portion thereof disposed in the trench adjacent to and insulated from one of the floating gates; and
a pair of electrically conductive control gates each disposed over and insulated from one of the channel region second portions for controlling a conductivity of the one channel region second portion.
13. The array of claim 12 , wherein each of the memory cell pairs further comprises:
a block of conductive material having at least a lower portion thereof disposed in the trench adjacent to and insulated from the pair of erase gates.
14. The array of claim 13 , wherein each of the conductive material blocks is electrically connected to one of the first regions.
15. The array of claim 14 further comprising:
a plurality of spaced apart first conduction lines extending substantially parallel to one another in a second direction, substantially perpendicular to the first direction, wherein each first conduction line is connected to the block of conductive material disposed in the trench.
16. The array of claim 15 further comprising:
a plurality of spaced apart second conduction lines extending substantially parallel to one another in the second direction, wherein each second conduction line is connected to one of the pair of erase gates in the trench.
17. The array of claim 16 further comprising:
a plurality of spaced apart third conduction lines extending substantially parallel to one another in the second direction, wherein each third conduction line is connected to a control gate.
18. The array of claim 17 further comprising:
a plurality of spaced apart fourth conduction lines extending substantially parallel to one another in the first direction, wherein each fourth conduction lines is connected to a second region.
19. The array of claim 12 , wherein each of the erase gates is disposed adjacent to one of the floating gates and insulated therefrom with insulation material having a thickness that permits Fowler-Nordheim tunneling.
20. The array of claim 19 , further comprising: said floating gate having a tip directed to said erase gate for facilitating the removal of charges from the floating gate to the erase gate.
21. The array of claim 12 wherein each of the erase gates extends into a trench and is substantially of the same length as the length of an adjacent floating gate.
22. The array of claim 12 wherein each of the erase gates extends into a trench and is substantially shorter than the length of an adjacent floating gate.
23. The array of claim 12 , wherein each of the floating gates is of a conductive material.
24. The array of claim 12 , wherein first and second portions for each of the channel regions are non-linear with respect to each other, with each of the channel region second portions extending in a direction directly toward one of the floating gates to define a path for programming the one floating gate.