IP Library Granted Patent US 7,087,441
Granted Patent B2
US 7,087,441 · App. 10/968,929 · Granted Aug 8, 2006

Method of making a circuitized substrate having a plurality of solder connection sites thereon

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Quick Facts
Patent No.
US 7,087,441
App. No.
10/968,929
Granted
Aug 8, 2006
Kind
B2
Abstract

A method of making a circuitized substrate in which two solder deposits, either of the same or different metallurgies, are formed on at least two different metal or metal alloy conductors and PTHs. In an alternative embodiment, the same solder compositions may be deposited on conductor and PTHs of different metal or metal alloy composition. In each embodiment, a single commoning layer (e.g., copper) is used, being partially removed following the first deposition. The solder is deposited using an electroplating process (electroless or electrolytic) and the commoning bar in both depositing steps. An information handling system utilizing the circuitized substrate formed in accordance with the invention is also described.

Claims (82)

1. A method of making a circuitized substrate, said method comprising:

providing a substrate including at least one dielectric layer selected from the group of materials consisting of fiberglass-reinforced epoxy resin, polytetrafluoroethylene, polyimide, polyamide, cyanate resin, photoimageable material, and combinations thereof;

providing first and second conductors on said dielectric layer of said substrate and first and second PTHs within said dielectric layer of said substrate, said first conductor and said first PTH of a different metal or metal alloy than said second conductor and said second PTH;

forming a conductive commoning layer on said substrate over said first and second conductors and PTHs and said dielectric layer;

depositing a first quantity of solder material on said first conductor and said first PTH using an electro-plating process utilizing said commoning layer; and

thereafter depositing a second quantity of solder material on said second conductor and said second PTH using an electro-plating process also utilizing said same commoning layer.

2. A method of making a circuitized substrate, said method comprising:

providing a substrate including at least one dielectric layer;

providing first and second conductors on said dielectric layer of said substrate and first and second PTHs within said dielectric layer of said substrate, said first conductor and said first PTH of the same metal or metal alloy as said second conductor and said second PTH;

forming a conductive commoning layer on said substrate over said first and second conductors and PTHs and said dielectric layer;

depositing a first quantity of solder material on said first conductor and said first PTH using an electro-plating process utilizing said commoning layer; and

thereafter depositing a second quantity of solder material of a different metallurgy than said first quantity of solder on said second conductor and said second PTH using an electro-plating process also utilizing said same commoning layer.

3. The method of claim 2 wherein said dielectric layer is selected from the group of materials consisting of fiberglass-reinforced epoxy resin, polytetrafluoroethylene, polyimide, polyamide, cyanate resin, photoimageable material, and combinations thereof.

4. The method of claim 2 wherein said PTHs are initially formed using a laser or by mechanical drilling.

5. The method of claim 2 wherein said first and second conductors and said first and second PTHs are selected from the group of metals and metal alloys consisting of copper, copper-nickel, copper-nickel-palladium, copper-nickel-palladium-gold and combinations thereof.

6. The method of claim 2 wherein said commoning layer is formed using an electro-plating process.

7. The method of claim 6 wherein said electro-plating process is electroless plating.

8. The method of claim 6 wherein said commoning layer is copper or a copper alloy and is plated to a thickness of from about 10 microinches to about 30 microinches.

9. The method of claim 2 further including the step of removing part of said commoning layer following said depositing of said first quantity of solder material on said first conductor and said first PTH using said electro-plating process utilizing said commoning layer and prior to said depositing of said second quantity of solder material on said second conductor and said second PTH using said electro-plating process also utilizing said same commoning layer.

10. The method of claim 9 wherein said removing of said part of said commoning layer is accomplished using an etching process.

11. The method of claim 2 further including using photolithographic processing to provide a thin dielectric layer over said first and second conductors and said first and second PTHs and then removing selected portions of said thin dielectric layer to expose said first conductor and said first PTH prior to said depositing of said first quantity of said solder material on said first conductor and said first PTH using said electro-plating process utilizing said commoning layer.

12. The method of claim 11 further including using photolithographic processing to provide a second thin dielectric layer over said first and second conductors and said first and second PTHs and then removing selected portions of said second thin dielectric layer to expose said second conductor and said second PTH prior to said depositing of said second quantity of said solder material on said second conductor and said second PTH using said electro-plating process also utilizing said commoning layer.

13. The method of claim 12 further including removing said first and second thin dielectric layers subsequent to said depositing of said first and second quantities of solder material, respectively.

14. The method of claim 2 further including subjecting said first and second quantities of said solder materials to a re-flow process following said depositing thereof.

15. The method of claim 14 further including electrically connecting each of said re-flowed quantities of said solder materials on said first and second conductors and said first and second PTHs to a conductor of at least one electronic component to form an electrical assembly.

16. The method of claim 15 wherein said electrically connecting of said re-flowed quantities of said solder materials is accomplished utilizing a second re-flow process.

17. The method of claim 15 further including positioning said electrical assembly within an information handling system and electrically coupling said electrical assembly to the circuitry of said information handling system so that said electrical assembly is part of said information handling system.

18. A method of making a circuitized substrate, said method comprising:

providing a substrate including at least one dielectric layer;

providing first and second conductors on said dielectric layer of said substrate and first and second PTHs within said dielectric layer of said substrate, said first conductor and said first PTH of a different metal or metal alloy than said second conductor and said second PTH;

forming a conductive commoning layer on said substrate over said first and second conductors and PTHs and said dielectric layer;

depositing a first quantity of solder material on said first conductor and said first PTH using an electro-plating process utilizing said commoning layer; and

thereafter depositing a second quantity of solder material on said second conductor and said second PTH using an electro-plating process also utilizing said same commoning layer, said first conductor and said first PTH being selected from the group of metals and metal alloys consisting of copper, copper-nickel, copper-nickel-palladium, copper-nickel-palladium-gold and combinations thereof.

19. The method of claim 18 wherein said second conductor and said second PTI are selected from the group of metals and metal alloys consisting of copper, copper-nickel, copper-nickel-palladium, copper-nickel-palladium-gold and combinations thereof.

20. A method of making a circuitized substrate, said method comprising:

providing a substrate including at least one dielectric layer;

providing first and second conductors on said dielectric layer of said substrate and first and second PTHs within said dielectric layer of said substrate, said first conductor and said first PTH of a different metal or metal alloy than said second conductor and said second PTH;

forming a conductive commoning layer on said substrate over said first and second conductors and PTHs and said dielectric layer;

depositing a first quantity of solder material on said first conductor and said first PTH using an electro-plating process utilizing said commoning layer; and

thereafter depositing a second quantity of solder material on said second conductor and said second PTH using an electro-plating process also utilizing said same commoning layer, said first quantity of said solder material being of a different metallurgy than said second quantity of solder material.

21. The method of claim 20 wherein said PTHs are initially formed using a laser or by mechanical drilling.

22. The method of claim 20 wherein said commoning layer is formed using an electro-plating process.

23. The method of claim 22 wherein said electro-plating process is electroless plating.

24. The method of claim 22 wherein said commoning layer is copper or a copper alloy and is plated to a thickness of from about 10 microinches to about 30 microinches.

25. The method of claim 20 further including the step of removing part of said commoning layer following said depositing of said first quantity of solder material on said first conductor and said first PTH using said electro-plating process utilizing said commoning layer and prior to said depositing of said second quantity of solder material on said second conductor and said second PTH using said electro-plating process also utilizing said same commoning layer.

26. The method of claim 25 wherein said removing of said part of said commoning layer is accomplished using an etching process.

27. The method of claim 20 further including using photolithographic processing to provide a thin dielectric layer over said first and second conductors and said first and second PTHs and then removing selected portions of said thin dielectric layer to expose said first conductor and said first PTH prior to said depositing of said first quantity of said solder material on said first conductor and said first PTH using said electro-plating process utilizing said commoning layer.

28. The method of claim 27 further including using photolithographic processing to provide a second thin dielectric layer over said first and second conductors and said first and second PTHs and then removing selected portions of said second thin dielectric layer to expose said second conductor and said second PTH prior to said depositing of said second quantity of said solder material on said second conductor and said second PTH using said electro-plating process also utilizing said commoning layer.

29. The method of claim 28 further including removing said first and second thin dielectric layers subsequent to said depositing of said first and second quantities of solder material, respectively.

30. A method of making a circuitized substrate, said method comprising:

providing a substrate including at least one dielectric layer;

providing first and second conductors on said dielectric layer of said substrate and first and second PTHs within said dielectric layer of said substrate, said first conductor and said first PTH of a different metal or metal alloy than said second conductor and said second PTH;

forming a conductive commoning layer on said substrate over said first and second conductors and PTHs and said dielectric layer;

depositing a first quantity of solder material on said first conductor and said first PTH using an electro-plating process utilizing said commoning layer; and thereafter depositing a second quantity of solder material on said second conductor and said second PTH using an electro-plating process also utilizing said same commoning layer, said first quantity of said solder material being of substantially the same metallurgy as said second quantity of solder material.

31. The method of claim 30 wherein said PTHs are initially formed using a laser or by mechanical drilling.

32. The method of claim 30 wherein said commoning layer is formed using an electro-plating process.

33. The method of claim 32 wherein said electro-plating process is electroless plating.

34. The method of claim 32 wherein said commoning layer is copper or a copper alloy and is plated to a thickness of from about 10 microinches to about 30 microinches.

35. The method of claim 30 further including the step of removing part of said commoning layer following said depositing of said first quantity of solder material on said first conductor and said first PTH using said electro-plating process utilizing said commoning layer and prior to said depositing of said second quantity of solder material on said second conductor and said second PTH using said electro-plating process also utilizing said same commoning layer.

36. The method of claim 35 wherein said removing of said part of said commoning layer is accomplished using an etching process.

37. The method of claim 30 further including using photolithographic processing to provide a thin dielectric layer over said first and second conductors and said first and second PTHs and then removing selected portions of said thin dielectric layer to expose said first conductor and said first PTH prior to said depositing of said first quantity of said solder material on said first conductor and said first PTH using said electro-plating process utilizing said commoning layer.

38. The method of claim 37 further including using photolithographic processing to provide a second thin dielectric layer over said first and second conductors and said first and second PTHs and then removing selected portions of said second thin dielectric layer to expose said second conductor and said second PTH prior to said depositing of said second quantity of said solder material on said second conductor and said second PTH using said electro-plating process also utilizing said commoning layer.

39. The method of claim 38 further including removing said first and second thin dielectric layers subsequent to said depositing of said first and second quantities of solder material, respectively.

40. A method of making a circuitized substrate, said method comprising:

providing a substrate including at least one dielectric layer;

providing first and second conductors on said dielectric layer of said substrate and first and second PTHs within said dielectric layer of said substrate, said first conductor and said first PTH of a different metal or metal alloy than said second conductor and said second PTH;

forming a conductive commoning layer on said substrate over said first and second conductors and PTHs and said dielectric layer;

depositing a first quantity of solder material on said first conductor and said first PTH using an electro-plating process utilizing said commoning layer;

thereafter depositing a second quantity of solder material on said second conductor and said second PTH using an electro-plating process also utilizing said same commoning layer; and

subjecting said first and second quantities of said solder materials to a re-flow process following said depositing thereof.

41. The method of claim 40 further including electrically connecting each of said re-flowed quantities of said solder materials on said first and second conductors and said first and second PTHs to a conductor of at least one electronic component to form an electrical assembly.

42. The method of claim 41 wherein said electrically connecting of said re-flowed quantities of said solder materials is accomplished utilizing a second re-flow process.

43. The method of claim 41 further including positioning said electrical assembly within an information handling system and electrically coupling said electrical assembly to the circuitry of said information handling system so that said electrical assembly is part of said information handling system.

44. The method of claim 40 wherein said PTHs are initially formed using a laser or by mechanical drilling.

45. The method of claim 40 wherein said commoning layer is formed using an electro-plating process.

46. The method of claim 45 wherein said electro-plating process is electroless plating.

47. The method of claim 45 wherein said commoning layer is copper or a copper alloy and is plated to a thickness of from about 10 microinches to about 30 microinches.

48. The method of claim 40 further including the step of removing part of said commoning layer following said depositing of said first quantity of solder material on said first conductor and said first PTH using said electro-plating process utilizing said commoning layer and prior to said depositing of said second quantity of solder material on said second conductor and said second PTH using said electro-plating process also utilizing said same commoning layer.

49. The method of claim 48 wherein said removing of said part of said commoning layer is accomplished using an etching process.

50. The method of claim 40 further including using photolithographic processing to provide a thin dielectric layer over said first and second conductors and said first and second PTHs and then removing selected portions of said thin dielectric layer to expose said first conductor and said first PTH prior to said depositing of said first quantity of said solder material on said first conductor and said first PTH using said electro-plating process utilizing said commoning layer.

51. The method of claim 50 further including using photolithographic processing to provide a second thin dielectric layer over said first and second conductors and said first and second PTHs and then removing selected portions of said second thin dielectric layer to expose said second conductor and said second PTH prior to said depositing of said second quantity of said solder material on said second conductor and said second PTH using said electro-plating process also utilizing said commoning layer.

52. The method of claim 51 further including removing said first and second thin dielectric layers subsequent to said depositing of said first and second quantities of solder material, respectively.

Assignments (17)
RELEASE OF SECURITY INTEREST IN PATENTS PREVIOUSLY RECORDED AT REEL/FRAME (063804/0702) Recorded Jun 2, 2026
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: TELEPHONICS CORPORATION; TTM TECHNOLOGIES, INC.; TTM TECHNOLOGIES NORTH AMERICA, LLC
Reel/Frame 075679/0852 →
PATENT SECURITY AGREEMENT (ABL) Recorded May 30, 2023
From: TELEPHONICS CORPORATION; TTM TECHNOLOGIES, INC.; TTM TECHNOLOGIES NORTH AMERICA, LLC
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 063804/0702 →
PATENT SECURITY AGREEMENT (TERM LOAN) Recorded May 30, 2023
From: TELEPHONICS CORPORATION; TTM TECHNOLOGIES, INC.; TTM TECHNOLOGIES NORTH AMERICA, LLC
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 063804/0745 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 15, 2019
From: I3 ELECTRONICS, INC.
To: TTM TECHNOLOGIES NORTH AMERICA, LLC
Reel/Frame 049758/0265 →
SECURITY INTEREST Recorded Nov 14, 2016
From: I3 ELECTRONICS, INC.
To: M&T BANK
Reel/Frame 040608/0626 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2015
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: I3 ELECTRONICS, INC.
Reel/Frame 035442/0569 →
RELEASE OF SECURITY INTEREST Recorded Feb 26, 2015
From: MAINES, WILLIAM; MAINES, DAVID
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 035098/0968 →
SECURITY AGREEMENT Recorded Jun 12, 2013
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: MAINES, WILLIAM; MAINES, DAVID
Reel/Frame 030599/0918 →
SECURITY AGREEMENT Recorded May 6, 2013
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.; EI TRANSPORTATION COMPANY LLC; ENDICOTT MEDTECH, INC.; INTEGRIAN HOLDINGS, LLC
To: M&T BANK
Reel/Frame 030359/0057 →
ASSIGNMENT OF SECURITY AGREEMENT Recorded Mar 6, 2013
From: PNC BANK, NATIONAL ASSOCIATION
To: INTEGRIAN HOLDINGS, LLC
Reel/Frame 029938/0823 →
SECURITY AGREEMENT Recorded May 14, 2012
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.; EI TRANSPORTATION COMPANY LLC; ENDICOTT MEDTECH, INC.
To: PNC BANK, NATIONAL ASSOCIATION
Reel/Frame 028230/0798 →
RELEASE BY SECURED PARTY Recorded May 14, 2012
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 028230/0611 →
SECURITY AGREEMENT Recorded Dec 3, 2008
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 021912/0908 →
RELEASE OF SECURITY INTEREST Recorded Nov 20, 2008
From: WACHOVIA CAPITAL FINANCE CORPORATION
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 021861/0869 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 18, 2007
From: WACHOVIA BANK, NATIONAL ASSOCIATION, AS AGENT
To: WACHOVIA CAPITAL FINANCE CORPORATION ( NEW ENGLAND), AS AGENT
Reel/Frame 019304/0676 →
SECURITY AGREEMENT Recorded May 10, 2005
From: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
To: WACHOVIA BANK, NATIONAL ASSOCIATION, AS AGENT
Reel/Frame 016561/0605 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 21, 2004
From: KONRAD, JOHN J.; KOTYLO, JOSEPH A.; RIOS, JOSE A.
To: ENDICOTT INTERCONNECT TECHNOLOGIES, INC.
Reel/Frame 015921/0099 →