IP Library Granted Patent US 7,102,156
Granted Patent B1
US 7,102,156 · App. 11/021,681 · Granted Sep 5, 2006

Memory elements using organic active layer

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Quick Facts
Patent No.
US 7,102,156
App. No.
11/021,681
Granted
Sep 5, 2006
Kind
B1
Abstract

A memory element includes a first electrode, a passive layer on and in contact with the first electrode, a polyfluorene active layer on and in contact with the active layer, and a second electrode on and in contact with the polyfluorene active layer. The chemical structure of the polyfluorene active layer may be altered to take different forms, each providing a different memory element operating characteristic.

Claims (24)

1. A memory structure comprising:

first and second electrodes;

a passive layer; and

a polyfluorene active layer, charged species being transportable from the passive layer to the active layer to determine a first memory state, and being transportable from the active layer to the passive layer to determine a second memory state;

the passive and active layers being between the first and second electrodes;

wherein the polyfluorene layer is a poly(fluorene-arylene) copolymer layer.

2. The memory structure of claim 1 wherein the poly(fluorene-arylene) copolymer layer comprises poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-alt-5,5′-(2,2′bithiophene)](F8T2).

3. The memory structure of claim 1 wherein the poly(fluorene-arylene) copolymer layer comprises poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-alt-2,5-pyridine](F8Py).

4. The memory structure of claim 2 wherein the passive layer is copper sulfide.

5. The memory structure of claim 3 wherein the passive layer is copper sulfide.

6. The memory structure of claim 1 wherein one of the electrodes is copper.

7. The memory structure of claim 1 wherein one of the electrodes is titanium.

8. The memory structure of claim 4 wherein one of the electrodes is copper and is in contact with the passive layer.

9. The memory structure of claim 5 wherein one of the electrodes is copper and is in contact with the passive layer.

10. A method of providing a memory structure comprising:

providing a first electrode;

providing a first layer in contact with the first electrode;

providing a second layer in contact with the first layer; and

providing a second electrode in contact with the second layer, wherein one of the first and second layers is a passive layer, and the other of the first and second layer is an active layer charged species being transportable from the passive layer to the active layer to determine a first memory state, and being transportable from the active layer to the passive layer to determine a second memory state, and wherein the active layer is a polyfluorene layer, wherein the polyfluorene layer is a poly(fluorene-arylene) copolymer layer.

11. The method of claim 10 wherein the poly(fluorene-arylene) copolymer layer comprises poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-alt-5,5′-(2,2′bithiophene)] (F8T2).

12. The method of claim 10 wherein the poly(fluorene-arylene) copolymer layer comprises poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-alt-2,5-pyridine] (F8Py).

13. The method of claim 10 wherein the first layer is a passive layer, and the second layer is an active layer.

14. The method of claim 11 wherein the passive layer is copper sulfide.

15. The method of claim 12 wherein the passive layer is copper sulfide.

Assignments (12)
RELEASE OF SECURITY INTEREST Recorded May 12, 2021
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 056987/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 20, 2020
From: WILMINGTON TRUST, NATIONAL ASSOCIATION
To: GLOBALFOUNDRIES INC.
Reel/Frame 054636/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2020
From: GLOBALFOUNDRIES INC.
To: GLOBALFOUNDRIES U.S. INC.
Reel/Frame 054633/0001 →
SECURITY AGREEMENT Recorded Nov 29, 2018
From: GLOBALFOUNDRIES INC.
To: WILMINGTON TRUST, NATIONAL ASSOCIATION
Reel/Frame 049490/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE FOLLOWING NUMBERS 6272046,7277824,7282374,7286384,7299106,7337032,7460920,7519447 PREVIOUSLY RECORDED ON REEL 039676 FRAME 0237. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Oct 16, 2018
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MORGAN STANLEY SENIOR FUNDING
Reel/Frame 047797/0854 →
RELEASE OF SECURITY INTEREST Recorded Jun 22, 2018
From: MORGAN STANLEY SENIOR FUNDING INC.,
To: CYPRESS SEMICONDUCTOR CORPORATION
Reel/Frame 046180/0604 →
SECURITY INTEREST Recorded Aug 15, 2016
From: CYPRESS SEMICONDUCTOR CORPORATION
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 039676/0237 →
RELEASE OF SECURITY INTEREST Recorded Mar 13, 2015
From: BARCLAYS BANK PLC
To: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY LLC
Reel/Frame 035201/0159 →
SECURITY AGREEMENT Recorded Jun 4, 2010
From: SPANSION LLC; SPANSION INC.; SPANSION TECHNOLOGY INC.; SPANSION TECHNOLOGY LLC
To: BARCLAYS BANK PLC
Reel/Frame 024522/0338 →
AFFIRMATION OF PATENT ASSIGNMENT Recorded Aug 18, 2009
From: ADVANCED MICRO DEVICES, INC.
To: GLOBALFOUNDRIES INC.
Reel/Frame 023119/0083 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2004
From: KINGSBOROUGH, RICHARD; SOKOLIK, IGOR; GAUN, DAVID; KAZA, SWAROOP; PANGRLE, SUZETTE; SPITZER, STUART
To: SPANSION LLC
Reel/Frame 016121/0974 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2004
From: NICKEL, ALEXANDER
To: ADVANCED MICRO DEVICES, INC.
Reel/Frame 016121/0942 →