Split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing
View Patent ↗A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.
1. A NAND flash memory structure formed on a semiconductor substrate of a first conductivity type, said structure comprising:
a first region of a second conductivity type in said substrate;
a second region of a second conductivity type in said substrate, spaced apart from said first region, thereby defining a continuous first channel region therebetween;
a plurality of floating gates, spaced apart from one another, each positioned over a separate portion of the channel region; and
a plurality of control gates, each associated with and adjacent to a floating gate, each control gate having two portions directly and electrically connected to one another:
a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.
2. The NAND flash memory structure of claim 1 wherein the two portions of a control gate are a unitary structure.
3. The NAND flash memory structure of claim 1 wherein the two portions of a control gate are separate structures electrically connected ex-situ.
4. The NAND flash memory structure of claim 1 , wherein each control gate further has a tab portion directed to an adjacent floating gate in a direction opposite said second portion.
5. The NAND flash memory structure of claim 1 further comprising a first select gate positioned over and insulated from a portion of the channel region immediately adjacent to and contiguous with the first region.
6. The NAND flash memory structure of claim 5 wherein said second region is immediately adjacent to and contiguous with a portion of the channel region over which and insulated therefrom is a control gate.
7. The NAND flash memory structure of claim 5 further comprising a second select gate positioned over and insulated from a portion of the channel region immediately adjacent to and contiguous with the second region.
8. The NAND flash memory structure of claim 1 wherein said first portion of said control gate is substantially rectilinearly shaped, and wherein said second portion of said control gate is substantially rectilinearly shaped.
9. The NAND flash memory structure of claim 1 wherein each floating gate has a tip adjacent to a control gate not associated with the floating gate.
10. An array of NAND flash memory cells in a semiconductor substrate of a first conductivity type, said array comprising:
a plurality of NAND flash memory structures, each structure comprising:
a first region of a second conductivity type in said substrate;
a second region of a second conductivity type in said substrate, spaced apart from said first region, thereby defining a continuous first channel region therebetween;
a plurality of floating gates, spaced apart from one another, each positioned over a separate portion of the channel region, wherein each floating gate defines a flash memory cell; and
a plurality of control gates, each associated with and adjacent to a floating gate, each control gate having two portions directly and electrically connected to one another:
a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto;
said plurality of flashmemory structures arranged in a plurality of rows and columns, with each channel region of a memory structure aligned in a column direction;
a plurality of bit lines, arranged in said column direction, each bit line connecting to a first region of a memory structure in said column direction;
a plurality of row lines, arranged in a row direction, each row line connecting to a second region of a memory structure on in said row direction; and
a plurality of control lines, arranged in said row direction, each control line connecting to the two portions of a control gate of a memory structure in said row direction.
11. The array of claim 10 wherein the two portions of a control gate in each structure are a unitary structure.
12. The array of claim 10 wherein the two portions of a control gate in each structure are separate structures electrically connected ex-situ.
13. The array of claim 10 , wherein each control gate of a structure further has a tab portion directed to an adjacent floating gate in a direction opposite said second portion.
14. The array of claim 10 further comprising a first select gate positioned over and insulated from a portion of the channel region immediately adjacent to and contiguous with the first region of each structure.
15. The array of claim 14 wherein said second region of each structure is immediately adjacent to and contiguous with a portion of the channel region over which and insulated therefrom is a control gate.
16. The array of claim 14 further comprising a second select gate positioned over and insulated from a portion of the channel region immediately adjacent to and contiguous with the second region of each structure.
17. The array of claim 10 wherein said first portion of said control gate of each structure is substantially rectilinearly shaped, and wherein said second portion of said control gate is substantially rectilinearly shaped.
18. The array of claim 10 wherein each floating gate has a tip adjacent to a control gate not associated with the floating gate.
19. The array of claim 10 wherein an isolation region in said substrate separates adjacent flash memory structures in the row direction.
20. The array of claim 19 wherein in the same column a first flash memory structure has a first region in common with a second flash memory structure.
21. The array of claim 20 wherein in the same column a third flash memory structure has a second region in common with said first flash memory structure.
22. A method of manufacturing a flash memory structure having a plurality of flash memory cells, said structure formed in a semiconductor substrate of a first conductivity type wherein said structure has a first region of a second conductivity type in said substrate; a second region of a second conductivity type in said substrate, spaced apart from said first region, thereby defining a continuous first channel region therebetween; a plurality of floating gates, spaced apart from one another, each positioned over a separate portion of the channel region, wherein each floating gate defines a flash memory cell; a plurality of control gates, each associated with and adjacent to a floating gate, each control gate being a unitary structure having two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto; wherein said method comprising:
forming a plurality of spaced apart floating gates insulated from said substrate, each floating gate further having an insulating member above each floating gate;
applying polysilicon to cover each of said floating gates, wherein said insulating members serve to define each control gate, separated from one another.
23. A method of manufacturing a flash memory array comprising a plurality of flash memory structures arranged in a plurality of rows and columns with each structure having a plurality of flash memory cells, said array formed in a semiconductor substrate of a first conductivity type wherein each structure has a first region of a second conductivity type in said substrate; a second region of a second conductivity type in said substrate, spaced apart from said first region, thereby defining a continuous first channel region therebetween; a plurality of floating gates, spaced apart from one another, each positioned over a separate portion of the channel region, wherein each floating gate defines a flash memory cell; a plurality of control gates, each associated with and adjacent to a floating gate, each control gate being a unitary structure having two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto; wherein said method comprising:
forming a plurality of isolation regions in said substrate, each isolation region parallel to one another in a column direction, with an active region between a pair of adjacent isolation regions;
forming a plurality of spaced apart floating gates insulated from and above an active region of said substrate, each floating gate further having an insulating member above each floating gate, wherein each insulating member extends in a row direction across a plurality of active regions;
applying polysilicon to cover each of said floating gates, wherein said insulating members serve to define each control gate, separated from one another and extending in a row direction; each of said control gates being a unitary structure having two portions: a first portion insulated from an active region and between adjacent floating gates, and a second portion over an adjacent floating gate.