Memory cell with high-K antifuse for reverse bias programming
View Patent ↗An integrated circuit and associated method of programming are provided. Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode. The antifuse is constructed to include a high-K dielectric material with a K greater than 3.9. Further, the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.
1. An integrated circuit, comprising:
a memory cell including:
a diode, and
an antifuse in communication with the diode and disposed vertically above or below the diode;
wherein the antifuse includes a high-K dielectric material with a K greater than 3.9;
wherein the memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.
2. The integrated circuit of claim 1 , wherein the diode includes a first portion including a first heavily doped semiconductor material having a first conductivity type and a second portion including an intrinsic semiconductor material or a doped semiconductor material having a second conductivity type opposite the first conductivity type.
3. The integrated circuit of claim 2 , wherein the antifuse is in contact with the first portion of the diode.
4. The integrated circuit of claim 2 , wherein the antifuse is in contact with the second portion of the diode.
5. The integrated circuit of claim 2 , wherein the first portion of the diode is disposed vertically above the second portion of the diode.
6. The integrated circuit of claim 5 , wherein the antifuse is disposed vertically below the second portion of the diode.
7. The integrated circuit of claim 5 , wherein the antifuse is disposed vertically above the first portion of the diode and the second portion of the diode, wherein the second portion includes a doped semiconductor material having a second conductivity type opposite the first conductivity type.
8. The integrated circuit of claim 5 , wherein the antifuse is disposed vertically above the first portion of the diode.
9. The integrated circuit of claim 2 , wherein the second portion of the diode includes a heavily doped semiconductor material having the second conductivity type, and wherein the diode further includes a third portion, the third portion of the diode including an intrinsic or a lightly doped semiconductor material, the third portion of the diode disposed vertically between the first portion of the diode and the second portion of the diode.
10. The integrated circuit of claim 9 , wherein the antifuse is disposed vertically below the second portion of the diode and the third portion of the diode.
11. The integrated circuit of claim 9 , wherein the antifuse is disposed vertically above the first portion of the diode and the third portion of the diode.
12. The integrated circuit of claim 1 , wherein the high-K dielectric material is titanium oxide.
13. The integrated circuit of claim 1 , wherein the high-K dielectric material is tantalum oxide.
14. The integrated circuit of claim 1 , wherein the high-K dielectric material is hafnium oxide.
15. The integrated circuit of claim 1 , wherein the high-K dielectric material is aluminum oxide.
16. The integrated circuit of claim 1 , wherein the memory cell is included in an array of memory cells including a plurality of word lines and a plurality of bit lines.
17. The integrated circuit of claim 16 , wherein the array of memory cells comprises more than one level of the word lines or more than one level of the bit lines.
18. The integrated circuit of claim 17 , wherein the more than one level of bit lines or more than one level of word lines are monolithically formed above a substrate in a monolithic three dimensional memory array.
19. The integrated circuit of claim 18 , wherein the substrate comprises monocrystalline silicon.
20. The integrated circuit of claim 1 , wherein the diode comprises a polycrystalline semiconductor material.
21. The integrated circuit of claim 20 , wherein the diode comprises polycrystalline silicon.
22. A method for programming memory, comprising:
applying a programming pulse to a memory cell including a diode and an antifuse in communication with the diode and disposed vertically above or below the diode;
wherein the antifuse includes a high-K dielectric material with a K greater than 3.9;
wherein the programming pulse reverse biases the diode of the memory cell.
23. The method of claim 22 , wherein the memory cell is programmed in one of a plurality of available memory states.
24. A method for programming memory, comprising:
applying a programming pulse to a memory cell including a diode and an antifuse in communication with the diode;
wherein the antifuse includes a high-K dielectric material with a K greater than 3.9;
wherein the programming pulse reverse biases the diode of the memory cell;
wherein the memory cell is programmed in one of a plurality of available memory states;
wherein the memory cell is programmed in more than one memory state by applying different soaking pulses to the memory cell which forward bias the diode of the memory cell.
25. The method of claim 24 , wherein the application of the different soaking pulses result in the diode of the memory cell including different resistances when turned on.
26. A method for programming memory, comprising:
applying a programming pulse to a memory cell including a diode and an antifuse in communication with the diode;
wherein the antifuse includes a high-K dielectric material with a K greater than 3.9;
wherein the programming pulse reverse biases the diode of the memory cell;
and further comprising applying a first soaking pulse to the diode of the memory cell, and applying a second soaking pulse different from the first soaking pulse to a diode of another memory cell.
27. A method for programming memory, comprising:
applying a programming pulse to a memory cell including a diode and an antifuse in communication with the diode;
wherein the antifuse includes a high-K dielectric material with a K greater than 3.9;
wherein the programming pulse reverse biases the diode of the memory cell;
wherein programming pulses are applied to a plurality of memory cells simultaneously.
28. The method of claim 27 , wherein the number of memory cells that are programmed over time is increased when the programming pulses are applied to the memory cells simultaneously.
29. A monolithic integrated circuit, comprising:
a monolithic three-dimensional array of memory cells including a plurality of word lines and a plurality of bit lines, the three-dimensional array of memory cells having more than one level of the word lines or more than one level of the bit lines;
wherein at least one of the memory cells includes:
a diode, and
an antifuse in communication with the diode and disposed vertically above or below the diode;
wherein the antifuse includes a high-K dielectric material with a K greater than 3.9;
wherein the at least one memory cell is programmed utilizing a programming pulse that reverse biases the diode thereof.
30. The integrated circuit of claim 29 , wherein the diode includes a first portion including a first heavily doped material, a second portion including a second heavily doped material, and a third portion including an intrinsic or a lightly doped material.
31. The integrated circuit of claim 30 , wherein the antifuse is in contact with the first portion of the diode.
32. The integrated circuit of claim 30 , wherein the antifuse is in contact with the second portion of the diode.
33. The integrated circuit of claim 29 , wherein the diode comprises a polycrystalline semiconductor material.
34. The integrated circuit of claim 29 , wherein the more than one level of bit lines or more than one level of word lines are monolithically formed above a substrate in a monolithic three dimensional memory array.