Unified multilevel memory systems and methods
View Patent ↗A Unified Memory may store multiple types of content such as data or fast code or slow code. The data or code may be stored in separate arrays or in a common array. In an array, a tag bit may indicate the type of content such as data or fast code or slow code or single level or multilevel content. Tag bit may indicate communication interface or IO driver type. Sense amplifiers may be configurable based on the type of data being read. A Flash Security Measure is used to protect a protected memory area. A Flash Security Key is used for authentication and authorization a particular memory area. A XCAM (e.g., CAM) array is included in the Unified Memory. Unified Memory Concurrency is included.
1. A memory system comprising:
a memory array including a plurality of non-volatile memory cells configurable into a plurality of memory storage configurations; and
a plurality of tag bit cells each configured to designate a memory storage configuration set for an associated memory cell;
wherein the plurality of tag bit cells are physically arranged and electrically configurable to achieve two or more memory storage configurations, each configuration of the two or more memory storage configurations selected from among the group of configurations composed of type of cell, type of input/output interface, and security features.
2. The memory system of claim 1 wherein the non-volatile memory cells store content therein as single level or multilevel content.
3. The memory system of claim 1 wherein the tag bit cells are nonvolatile.
4. The memory system of claim 2 wherein the tag bit cells are volatile.
5. The memory system of claim 1 wherein the tag bit cells are single level or multilevel.
6. The memory system of claim 5 wherein the tag bit cells are nonvolatile or volatile.
7. The memory system of claim 1 wherein the tag bit cells include one or both of a security key or a security measure.
8. The memory system of claim 1 wherein the tag bit cells include logic that is electrically configurable to set a bias for a sensing mode appropriate to read the memory storage configuration that has been set for the associated memory cell.
9. The memory system of claim 8 wherein the bias is either a high bias current or a low bias current.
10. The memory system of claim 1 wherein the tag bit cells are electrically configurable to set multiple input/output interface configurations.
11. The memory system of claim 10 wherein the multiple input/output interface configurations include LVDS, CMOS, and HSTL.
12. The memory system of claim 1 wherein the tag bit cells are electrically configurable to set a sense mode.
13. The memory system of claim 1 wherein the tag bit cells are electrically configurable to set a current sense mode.
14. The memory system of claim 1 wherein the tag bit cells are electrically configurable to set a voltage sense mode.
15. The memory system of claim 1 wherein the tag bit cells are electrically configurable between a plurality of multi-mode sense modes.
16. The memory system of claim 15 wherein the plurality of multi-mode sense modes include data and code.
17. The memory system of claim 16 wherein the plurality of multi-mode sense modes include fast code and slow code.
18. The memory system of claim 15 wherein the plurality of multi-mode sense modes include fast code and slow code.
19. The memory system of claim 1 wherein the memory array is arranged in memory segments, and wherein the tag bit cells are electrically configurable among a plurality of memory sizes of the memory segments.
20. The memory system of claim 1 wherein the memory array is arranged in memory segments, and wherein the tag bit cells are electrically configurable among a plurality of types of memory cells within the memory segments.
21. The memory system of claim 20 wherein the types of memory cells include data or code.
22. The memory system of claim 1 wherein the memory array is arranged in memory segments, and wherein the tag bit cells are electrically configurable among a plurality of memory cell formats within the memory segments.
23. The memory system of claim 22 wherein the memory cell formats include 1-bit per cell, 2-bits per cell, and an integer N-bits per cell.
24. The memory system of claim 1 wherein the tag bit cells are electrically configurable among one or both of programming speeds or reading speeds.
25. The memory system of claim 24 wherein a selected speed is chosen as a function of memory precision desired.
26. The memory system of claim 24 wherein the memory array is a single level array and the programming speed or reading speed is fast relative to a programming speed or a reading speed of a multilevel array.
27. The memory system of claim 26 wherein the fast speed is achieved by using a single or few programming pulses.
28. The memory system of claim 24 wherein the memory array is a multi-level array and the programming speed or reading speed is slow relative to a programming speed or a reading speed of a single level array.
29. The memory system of claim 1 wherein the memory array includes a content addressable memory array.
30. The memory system of claim 29 wherein the content addressable memory array is configured to execute a key authentication using a key from the tag bit cells.
31. The memory system of claim 1 wherein the memory array includes an extension array.
32. The memory system of claim 1 wherein the memory array is arranged in memory segments, and wherein the memory segments are configured to store security features.
33. The memory system of claim 1 wherein the memory array is arranged in memory segments, and wherein the memory segments are configured to store user classification.
34. The memory system of claim 1 wherein the memory array is arranged in memory segments, and wherein the memory segments are configured to store device identification.
35. The memory system of claim 1 wherein the memory array includes a memory controller having a flash file system.
36. A memory system comprising:
a memory array including a plurality of non-volatile memory cells that are electrically configurable to achieve a plurality of memory storage configurations, and wherein the memory cells are arranged in segments; and
a plurality of tag bit cells associated with the memory cells, wherein the tag bit cells are physically arranged and electrically configurable to designate a configuration selected from the group of configurations composed of type of cell, format of cell, number of levels per cell, and type of input/output interface.
37. A memory system comprising:
a memory array including a plurality of non-volatile memory cells that are electrically configurable to achieve a plurality of memory storage configurations, and wherein the memory cells are arranged in segments; and
a plurality of tag bit cells associated with the memory cells, wherein the tag bit cells are physically arranged and electrically reconfigurable to designate a type of cell capable of storing either code or data.
38. A memory system comprising:
a memory array including a plurality of non-volatile memory cells that are electrically configurable to achieve a plurality of memory storage configurations, and wherein the memory cells are arranged in segments; and
a plurality of tag bit cells associated with the memory cells, wherein the tag bit cells are physically arranged and electrically configurable to designate a type of cell capable of storing either fast code or slow code.
39. A memory system comprising:
a memory array including a plurality of non-volatile memory cells that are electrically configurable to achieve a plurality of memory storage configurations, and wherein the memory cells are arranged in segments; and
a plurality of tag bit cells associated with the memory cells, wherein the tag bit cells are physically arranged and electrically configurable to designate a format of cell capable of storing 1-bit per cell, 2-bit per cell, and an integer N-bits per cell.