Granted Patent B2

US 7,704,878 · App. 11/240,468 · Granted Apr 27, 2010

Abstract

Claims (45)

1. A method of forming a contact, comprising:

forming a via through a dielectric material;

using atomic layer deposition (ALD) to form a silicon oxide nitride (SiON) spacer on sidewalls of the via;

forming a barrier layer adjacent the spacer, where forming the barrier layer comprises:

forming a layer of titanium adjacent the spacer to a thickness ranging from about 150 Å to about 300 Å, and

forming a layer of titanium nitride adjacent the layer of titanium to a thickness ranging from about 50 Å to about 200 Å; and

forming a contact adjacent the barrier layer.

2. The method of claim 1 , wherein the SiON spacer has a thickness ranging from about 20 Å to about 500 Å.

3. The method of claim 1 , wherein the ALD is performed at a temperature of 500 degrees or less.

4. The method of claim 1 , wherein forming the contact comprises:

depositing tungsten adjacent the baffler layer to substantially fill the via.

5. The method of claim 1 , where forming the baffler layer further comprises:

forming the layer of titanium and the layer of titanium nitride to a combined thickness of approximately 300 Å.

6. A method, comprising:

forming a silicon oxide nitride (SiON) spacer within a via using atomic layer deposition (ALD); and

forming a contact adjacent the spacer within the via.

7. The method of claim 6 , wherein forming the SiON spacer comprises:

depositing a layer of SiON material using ALD performed at a temperature of about 500 degrees C. or lower; and

etching the SiON material to form the SiON spacer.

8. The method of claim 7 , wherein the layer of SiON material has a thickness ranging from about 20 Å to about 500 Å.

9. The method of claim 6 , further comprising:

forming a barrier metal layer over the SiON spacer prior to forming the contact.

10. The method of claim 9 , wherein the barrier metal layer includes a layer of titanium.

11. The method of claim 10 , wherein the baffler metal layer further includes a layer of titanium nitride formed adjacent the layer of titanium.

12. The method of claim 11 , where forming the barrier metal layer comprises:

forming the layer of titanium to a thickness ranging from about 150 Å to about 300 Å; and

forming the layer of titanium nitride to a thickness ranging from about 50 Å to about 200 Å.

13. The method of claim 12 , where forming the barrier metal layer further comprises:

forming the layer of titanium and the layer of titanium nitride to a combined thickness of approximately 300 Å.

14. The method of claim 9 , wherein forming the contact comprises:

forming the contact over the barrier metal layer.

15. The method of claim 9 , wherein forming the contact comprises:

depositing a metal adjacent the baffler metal layer to substantially fill the via.

16. A contact structure in a semiconductor device, comprising:

a layer of dielectric material;

a via formed through the dielectric material;

a silicon oxide nitride (SiON) spacer formed on sidewalls of the via using atomic layer deposition (ALD);

a baffler layer formed adjacent the spacer; and

a metal formed adjacent the barrier layer.

17. The contact structure of claim 16 , wherein the SiON spacer has a thickness ranging from about 20 Å to about 500 Å.

18. The contact structure of claim 16 , wherein the baffler layer includes a layer of titanium.

19. The contact structure of claim 18 , wherein the barrier layer further includes a layer of titanium nitride formed adjacent the layer of titanium.

20. The contact structure of claim 19 , where the layer of titanium has a thickness ranging from about 150 Å to about 300 Å and where the layer of titanium nitride has a thickness ranging from about 50 Å to about 200 Å.

21. The contact structure of claim 20 , where the layer of titanium and the layer of titanium nitride have a combined thickness of approximately 300 Å.

22. The contact structure of claim 16 , wherein the metal substantially fills the via and comprises tungsten.

Assignments (12)