IP Library Granted Patent US 7,378,734
Granted Patent B2
US 7,378,734 · App. 11/421,064 · Granted May 27, 2008

Stacked contact bump

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Quick Facts
Patent No.
US 7,378,734
App. No.
11/421,064
Granted
May 27, 2008
Kind
B2
Abstract

A novel method for providing bump structures that can be formed by conventional stud bump bonding techniques is disclosed. The bumps can be arranged in a buttressed configuration that allows for substantial lateral and vertical contact loads, and substantial heights. A side-by-side configuration may be used to build a stacked bump contact that is substantially taller and stronger than is possible under current techniques. Other arrangements can be selected to optimize the load bearing capacity in any direction or combination of directions.

Claims (28)

1. An electrical contact system comprising:

a buttressed bump structure comprising:

a bonding surface that defines a bond plane; and

a bottom tier comprised of a plurality of bottom bumps connected to the bonding surface and arranged in a buttressed configuration that is parallel to the bond plane; and

a compliant contact that makes a releasable electrical connection with the buttressed bump structure, wherein during the electrical connection the contact imparts a force on the buttressed bump structure that contains a force component that is parallel to the bond plane.

2. The electrical contact system of claim 1 , wherein the bottom tier defines an upper plane that is substantially parallel to the bond plane, further comprising:

a second tier comprising an upper bump connected to the bottom tier wherein the upper bump is disposed of substantially above the upper plane.

3. The electrical contact system of claim 2 , wherein the second tier is staggered relative to the bottom tier.

4. The electrical contact svsflm of claim 2 , wherein the second tier is non-staggered relative to the bottom tier.

5. The eletrical contact system of claim 1 , wherein the bottom tier defines an enclosure and the enclosure receives the contact.

6. The eletrical contact system of claim 5 , wherein the enclosure forms a shape that is selected from the group consisting of: a triangle, a rectangle and an ellipse.

7. The eletrical contact system of claim 6 , wherein the compliant contact is comprised of a shape that is complementary to the shape of the enclosure.

8. The electrical contact system of claim 1 , wherein the bottom tier defines an upper plane that is substantially parallel to the bond plane, further comprising:

a second tier comprising a second plurality of bumps arranged in a buttressed configuration disposed of substantially above the upper plane, and wherein the second tier defines a second tier upper plane; and

a third tier comprising an upper bump connected to the second tier wherein the upper bump is disposed of substantially above the second tier upper plane.

9. The eletrical contact system of claim 8 , wherein the bottom tier and the second tier define an enclosure and the enclosure receives the compliant contact.

10. The eletrical contact system of claim 9 , wherein the enclosure forms a shape that is selected from the group consisting of: a triangle, a rectangle, and an ellipse.

11. The eletrical contact system of claim 10 , wherein the compliant contact is comprised of a shape that is complementary to the shape of the enclosure.

12. The electrical contact system of claim 8 , wherein the bottom tier's buttressed configuration is preferentially stronger in one lateral direction.

13. The electrical contact system of claim 8 , wherein the second tier's buttressed configuration is preferentially stronger in one lateral direction.

14. The electrical contact system of claim 1 , wherein the buttressed configuration is selected from the group consisting of: a triangular formation, a square formation, an in-line formation and a u-shaped formation.

15. The contact system of claim 1 , wherein the structure is coated with a reinforcement coating.

16. The electical contact system of claim 15 , wherein the reinforcement coating is selected from the group consisting of: nickel, nickel cobalt, nickel manganese, dispersion hardened nickel, copper, tungsten cobalt and combinations thereof.

17. The contact system of claim 1 , wherein the structure is electrically conductive.

18. The electrical contact system of claim 17 wherein the structure is a probe contactor.

19. The electrical contact system of claim 1 , wherein the plurality of bottom bumps comprise a conductive material selected from the group consisting of: gold, copper, platinum, palladium and combinations thereof.

20. The contact system of claim 19 wherein the conductive material is doped with a dopant selected from a group consisting of: lead, palladium, calcium, beryllium, silicon, the lanthanides and combinations thereof.

21. The electrical contact system of claim 1 wherein the structure is a micromechanical standoff.

Assignments (6)
CHANGE OF NAME Recorded Apr 17, 2012
From: VERIGY US, INC
To: ADVANTEST AMERICA, INC
Reel/Frame 028054/0852 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 22, 2012
From: TOUCHDOWN TECHNOLOGIES, INC.
To: VERIGY US, INC.
Reel/Frame 027906/0497 →
CHANGE OF NAME Recorded Jul 27, 2009
From: LAKE ACQUISITION, INC.
To: TOUCHDOWN TECHNOLOGIES, INC.
Reel/Frame 023003/0771 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2009
From: TOUCHDOWN TECHNOLOGIES, INC.
To: LAKE ACQUISITION, INC.
Reel/Frame 022868/0913 →
RELEASE OF SECURITY INTEREST Recorded Jun 16, 2009
From: MERITECH CAPITAL PARTNERS III L.P.; MERITECH CAPITAL AFFILIATES III L.P.; FIRSTMARK III, L.P.; FIRSTMARK III OFFSHORE PARTNERS, L.P.; ADAMS CAPITAL MANAGEMENT II, L.P.; ADAMS CAPITAL MANAGEMENT III, L.P.; CHANCELLOR V, L.P.; CHANCELLOR V-A, L.P.; CITIVENTURE 2000, L.P.; E-INVEST LIMITED; FALCON FUND; THE ROBERT AND ANNE POCHOWSKI LIVING TRUST DATED MAY 5, 1999; FORT WASHINGTON PRIVATE EQUITY INVESTORS IV, L.P.; KENTUCKY CO-INVESTMENT PARTNERS, L.P.; J.F. SHEA CO., AS NOMINEE 2000-129; 3VS1 ASIA GROWTH FUND LTD.
To: TOUCHDOWN TECHNOLOGIES, INC.
Reel/Frame 022824/0902 →
SECURITY AGREEMENT Recorded Apr 30, 2009
From: TOUCHDOWN TECHNOLOGIES, INC.
To: MERITECH CAPITAL PARTNERS III L.P.; MERITECH CAPITAL AFFILIATES III L.P.; FIRSTMARK III, L.P.; FIRSTMARK III OFFSHORE PARTNERS, L.P.; ADAMS CAPITAL MANAGEMENT II, L.P.; ADAMS CAPITAL MANAGEMENT III, L.P.; CHANCELLOR V, L.P.; CHANCELLOR V-A, L.P.; CITIVENTURE 2000, L.P.; E-INVEST LIMITED; FALCON FUND; THE ROBERT AND ANNE POCHOWSKI LIVING TRUST DATED MAY 5, 1999; FORT WASHINGTON PRIVATE EQUITY INVESTORS IV, L.P.; KENTUCKY CO-INVESTMENT PARTNERS, L.P.; J.F. SHEA CO., AS NOMINEE 2000-129; 3VS1 ASIA GROWTH FUND LTD.
Reel/Frame 022619/0478 →