Apparatus and method of manufacture for integrated circuit and CMOS device including epitaxially grown dielectric on silicon carbide
View Patent ↗An integrated circuit, or portion thereof, such as a CMOS device, includes an epitaxially grown dielectric on a silicon carbide base. The epitaxially grown dielectric forms a gate dielectric and the silicon carbide base serves as a channel region for the CMOS device. In various embodiments, the epitaxially grown dielectric may be a crystalline carbon or carbon-containing film.
1. An integrated circuit comprising:
a silicon carbide base;
a dielectric film epitaxially grown on the silicon carbide base, the epitaxially grown dielectric film including crystalline carbon; and
a CMOS device including a channel region formed in the silicon carbide base and a gate dielectric formed by the epitaxially grown dielectric film.
2. An integrated circuit as defined in claim 1 wherein:
the epitaxially grown dielectric film has a dielectric constant larger than 4.5.
3. An integrated circuit as defined in claim 1 further comprising:
a silicon substrate;
wherein the silicon carbide base is formed on the silicon substrate.
4. An integrated circuit as defined in claim 1 wherein:
the silicon carbide base comprises a silicon carbide substrate.
5. An integrated circuit as defined in claim 1 further comprising:
a silicon carbide region formed on the epitaxially grown dielectric film;
wherein the CMOS device further includes a gate electrode formed by the silicon carbide region.
6. An integrated circuit as defined in claim 3 wherein:
the silicon carbide base is epitaxially grown on the silicon substrate.
7. An integrated circuit as defined in claim 6 wherein:
the epitaxially grown silicon carbide base is a strained silicon carbide film.
8. An integrated circuit as defined in claim 5 wherein:
the silicon carbide region is epitaxially grown on the epitaxially grown dielectric film.
9. An integrated circuit as defined in claim 5 wherein:
the silicon carbide region is deposited on the epitaxially grown dielectric film.