Methods of forming back side layers for thinned wafers

1. A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, the method comprising:

thinning the wafer from a back side opposite the front side;

after thinning the wafer, providing a back side layer on the back side of the thinned wafer wherein the wafer and the back side layer comprise different materials;

after providing the back side layer, patterning the back side layer so that portions of the back side of the thinned wafer are exposed through the patterned back side layer, wherein the patterned back side layer is configured to counter stress on the front side of the wafer; and

after patterning the back side layer, separating the plurality of integrated circuit devices.

2. A method according to claim 1 further comprising:

providing a plurality of interconnection bumps on the front side of the wafer.

3. A method according to claim 2 wherein providing the plurality of interconnection bumps precedes thinning the wafer.

4. A method according to claim 3 further comprising:

before thinning the wafer, providing a protective layer on the interconnection bumps.

5. A method according to claim 2 wherein thinning the wafer precedes providing the plurality of interconnection bumps.

6. A method according to claim 2 wherein providing the back side layer precedes providing the plurality of interconnection bumps.

7. A method according to claim 2 wherein providing the plurality of interconnection bumps precedes providing the back side layer.

8. A method according to claim 1 wherein the back side layer comprises an epoxy.

9. A method according to claim 1 wherein the wafer comprises a semiconductor wafer and wherein the back side layer comprises a non-semiconductor material.

10. A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, the method comprising:

providing a plurality of interconnection bumps on the front side of the wafer;

thinning the wafer from a back side opposite the front side;

providing a back side layer on the back side of the thinned wafer to control warpage of the thinned wafer wherein the wafer and the back side layer comprise different materials;

after providing the back side layer, patterning the back side layer so that portions of the back side of the thinned wafer are exposed through the patterned back side layer, wherein the patterned back side layer is configured to control warpage of the thinned wafer; and

after patterning the back side layer, separating the plurality of integrated circuit devices.

11. A method according to claim 10 wherein providing the plurality of interconnection bumps precedes thinning the wafer.

12. A method according to claim 11 further comprising:

before thinning the wafer, providing a protective layer on the interconnection bumps.

13. A method according to claim 10 wherein thinning the wafer precedes providing the plurality of interconnection bumps.

14. A method according to claim 10 wherein providing the back side layer precedes providing the plurality of interconnection bumps.

15. A method according to claim 10 wherein the back side layer comprises an epoxy.

16. A method according to claim 10 wherein the wafer comprises a semiconductor wafer and wherein the back side layer comprises a non-semiconductor material.

17. A method of processing a wafer including a plurality of integrated circuit devices on a front side of the wafer, the method comprising:

thinning the wafer from a back side opposite the front side;

after thinning the wafer, providing a back side layer on the back side of the thinned wafer wherein the wafer and the back side layer comprise different materials;

after providing the back side layer, patterning the back side layer so that portions of the back side of the thinned wafer are exposed through the patterned back side layer wherein the patterned back side layer is configured to control warpage of the thinned wafer; and

separating the plurality of integrated circuit devices.

18. A method according to claim 17 further comprising:

before separating the plurality of integrated circuit devices, providing a plurality of interconnection bumps on the front side of the wafer.

19. A method according to claim 18 wherein the interconnection bumps comprise interconnection solder bumps.

20. A method according to claim 17 further comprising:

before thinning the wafer, providing a plurality of interconnection bumps on the front side of the wafer;

after providing the plurality of interconnection bumps and before thinning the wafer, providing a protective layer on the interconnection bumps so that the interconnection bumps are between the protective layer and the wafer; and

after thinning the wafer, removing the protective layer so that the interconnection bumps are exposed.

21. A method according to claim 17 wherein the back side layer comprises an epoxy.

22. A method according to claim 17 wherein providing the back side layer comprises,

providing a sheet of a back side layer material apart from the wafer, and

adhering the back side of the thinned wafer and the sheet of the back side layer material.

23. A method according to claim 22 wherein the sheet of the back side layer material comprises a sheet of a thermoset epoxy.

24. A method according to claim 17 wherein the wafer comprises a semiconductor wafer and wherein the back side layer comprises a non-semiconductor material.

25. A method of processing a wafer including a plurality of devices on a front side of the wafer, the method comprising:

thinning the wafer from a back side opposite the front side;

after thinning the wafer, providing a back side layer on the back side of the thinned wafer wherein the wafer and the back side layer comprise different materials;

after providing the back side layer, patterning the back side layer so that portions of the back side of the thinned wafer are exposed through the patterned back side layer; and

after patterning the back side layer, separating the plurality of devices.

26. A method according to claim 25 wherein the back side layer comprises an epoxy.

27. A method according to claim 25 wherein providing the back side layer comprises,

providing a sheet of a back side layer material apart from the wafer, and

adhering the back side of the thinned wafer and the sheet of the back side layer material.

28. A method according to claim 27 further comprising:

after adhering the back side and the sheet of the back side layer material and before separating the plurality of devices, trimming excess portions of the sheet of the back side layer material away from the thinned wafer.

29. A method according to claim 25 wherein patterning the back side layer comprises patterning the back side layer to expose streets between individual devices before separating the plurality of devices so that the streets are exposed through the patterned back side layer before separating the plurality of devices.

30. A method according to claim 25 wherein providing the back side layer comprises molding the back side layer on the back side of the thinned wafer.

31. A method according to claim 25 further comprising:

providing a plurality of interconnection solder bumps on the front side of the wafer.

32. A method according to claim 31 wherein providing the plurality of interconnection solder bumps precedes thinning the wafer, the method further comprising:

before thinning the wafer, providing a protective layer on the interconnection solder bumps.

33. A method according to claim 25 wherein the patterned back side layer is configured to counter stress on the front side of the thinned wafer, to control warpage of the thinned wafer.

34. A method according to claim 25 wherein the wafer comprises a semiconductor wafer and wherein the back side layer comprises a non-semiconductor material.