Standoff height improvement for bumping technology using solder resist
View Patent ↗A system to support a die includes a substrate. A solder resist is disposed over the substrate. A first solder bump is disposed in the solder resist to provide electrical connectivity through the solder resist to the substrate. A second solder bump is formed over the solder resist to correspond with a peripheral edge or a corner of the die. The second solder bump provides standoff height physical support to the die.
1. A semiconductor device, comprising:
a substrate containing a conductive layer;
a solder resist film laminate layer disposed over the substrate and conductive layer;
an opening formed in the solder resist film laminate layer to expose the conductive layer, the solder resist film laminate layer being cured after the opening is formed;
an under bump metallization (UBM) layer formed over the conductive layer;
a plurality of first solder bumps formed over the UBM layer to promote reflow of the first solder bumps at a eutectic temperature;
a plurality of standoff solder bumps formed directly on the solder resist film laminate layer around a perimeter of the substrate, the solder resist film laminate layer preventing reflow of the standoff solder bumps at the eutectic temperature;
a semiconductor die; and
a plurality of second solder bumps disposed between the semiconductor die and the first solder bumps of the substrate, the second solder bumps being ref lowed to electrically connect the semiconductor die to the first solder bumps of the substrate, wherein after reflow of the second solder bumps the standoff solder bumps have a height 70-90% of a height of the second solder bumps prior to reflow to maintain a predetermined separation between the semiconductor die and substrate.
2. The semiconductor device of claim 1 , wherein the solder resist film laminate layer includes a photosensitive resin film or liquid-phase curable resin.
3. The semiconductor device of claim 2 , wherein the photosensitive resin film includes butadiene polymer, photo-crosslinking agent, photo-sensitizer, photo-polymerization initiator, and storage stabilizer.
4. The semiconductor device of claim 2 , wherein the liquid-phase curable resin includes bisphenol type epoxy resin, phenol type epoxy resin, or cresol type epoxy resin.
5. The semiconductor device of claim 4 , wherein the liquid-phase curable resin is mixed with a catalyst, filler, and defoaming agent and cured by heat or ultraviolet radiation.
6. The semiconductor device of claim 1 , wherein the first solder bumps and standoff solder bumps each include a eutectic solder material.
7. A semiconductor device, comprising:
a substrate containing a first conductive layer;
a film layer disposed over the substrate and first conductive layer;
an opening formed in the film layer to expose the first conductive layer;
a second conductive layer formed over the first conductive layer;
a first bump formed over the second conductive layer which promotes reflow of the first bump at a eutectic temperature;
a standoff bump formed directly on the film layer around a perimeter of the substrate, the film layer preventing reflow of the standoff bump at the eutectic temperature;
a semiconductor die; and
a second bump disposed between the semiconductor die and the first bump of the substrate, the second bump being reflowed to electrically connect the semiconductor die to the first bump of the substrate, wherein after reflow of the second bump the standoff bump has a height at least 70% of a height of the second bump prior to reflow to maintain separation between the semiconductor die and substrate.
8. The semiconductor device of claim 7 , wherein the film layer is cured after the opening is formed.
9. The semiconductor device of claim 7 , wherein the film layer includes a photosensitive resin film or liquid-phase curable resin.
10. The semiconductor device of claim 9 , wherein the photosensitive resin film includes butadiene polymer, photo-crosslinking agent, photo-sensitizer, photo-polymerization initiator, and storage stabilizer.
11. The semiconductor device of claim 9 , wherein the liquid-phase curable resin includes bisphenol type epoxy resin, phenol type epoxy resin, or cresol type epoxy resin.
12. The semiconductor device of claim 11 , wherein the liquid-phase curable resin is mixed with a catalyst, filler, and defoaming agent and cured by heat or ultraviolet radiation.
13. The semiconductor device of claim 7 , wherein the first bump and standoff bump each include a eutectic solder material.
14. The semiconductor device of claim 7 , wherein the semiconductor die is a flip chip type semiconductor die.
15. A semiconductor device, comprising:
a substrate containing a first conductive layer;
a film layer disposed over the substrate and first conductive layer;
an opening formed in the film layer to expose the first conductive layer;
a second conductive layer formed over the first conductive layer;
a first bump formed over the second conductive layer which promotes reflow of the first bump at a eutectic temperature; and
a standoff bump formed directly on the film layer around a perimeter of the substrate, the film layer preventing reflow of the standoff bump at the eutectic temperature to maintain a height of the standoff bump;
a semiconductor die; and
a second bump disposed between the semiconductor die and the first bump of the substrate, the second bump being reflowed to electrically connect the semiconductor die to the first bump of the substrate, wherein after reflow of the second bump the standoff bump has a height at least 70% of a height of the second bump prior to reflow to maintain separation between the semiconductor die and substrate.
16. The semiconductor device of claim 15 , wherein the film layer is cured after the opening is formed.
17. The semiconductor device of claim 15 , wherein the film layer includes a photosensitive resin film or liquid-phase curable resin.
18. The semiconductor device of claim 17 , wherein the photosensitive resin film includes butadiene polymer, photo-crosslinking agent, photo-sensitizer, photo-polymerization initiator, and storage stabilizer.
19. The semiconductor device of claim 17 , wherein the liquid-phase curable resin includes bisphenol type epoxy resin, phenol type epoxy resin, or cresol type epoxy resin.
20. The semiconductor device of claim 19 , wherein the liquid-phase curable resin is mixed with a catalyst, filler, and defoaming agent and cured by heat or ultraviolet radiation.
21. The semiconductor device of claim 15 , wherein the first bump and standoff bump each include a eutectic solder material.