Beam angle adjustment in ion implanters

1. A method of correcting an implantation angle in an ion implantation system, comprising:

generating an ion beam in an ion implantation system;

determining an implant angle distribution of at least one of

the ion beam relative to the mechanical surface of a workpiece into which ions are implanted by the beam, and

the ion beam relative to a calibrated reference of beam diagnostics in the implantation system;

determining whether the implant angle distribution is acceptable; and

adjusting a steering voltage to promote an acceptable implant angle distribution if the implant angle distribution is not acceptable.

2. The method of claim 1 , the calibrated reference of beam diagnostics corresponding to drift of one or more beamlets of the ion beam after passing through one or more known slots in the implantation system.

3. The method of claim 1 , comprising:

determining an average implant angle from the implant angle distribution;

determining whether the average implant angle is acceptable; and

adjusting the steering voltage to promote an acceptable average implant angle if the average implant angle is not acceptable.

4. The method of claim 3 , comprising:

calculating refractions of the average implant angle; and

adjusting the steering voltage based on the calculated refractions.

5. The method of claim 2 , comprising:

determining an average implant angle from the implant angle distribution;

determining whether the average implant angle is acceptable; and

adjusting the steering voltage to promote an acceptable average implant angle if the average implant angle is not acceptable.

6. The method of claim 5 , comprising:

calculating refractions of the average implant angle; and

adjusting the steering voltage based on the calculated refractions.

7. The method of claim 1 , adjusting the steering voltage of a steering component causing the ion beam to be moved toward a scan vertex of a scanning component located downstream of the steering component of the implantation system.

8. An ion implantation system, comprising:

a component for generating an ion beam;

a component for mass resolving the ion beam;

a steering component for steering the ion beam to a focal point of a parallelizing component located downstream of the steering component and configured to parallelize the ion beam; and

an endstation located downstream of the parallelizing component and configured to support a workpiece that is to be implanted with ions by the ion beam.

9. The system of claim 8 , the steering component comprising at least one pair of electrodes.

10. The system of claim 8 , the steering component comprising at least one pair of electrostatic deflection plates.

11. The system of claim 8 , comprising:

a measurement component configured to measure an implant angle distribution of at least one of

the ion beam relative to the mechanical surface of the workpiece, and

the ion beam relative to a calibrated reference of a beam diagnostic system; and

a controller operatively coupled to the measurement component and the steering component, and configured to adjust the operation of the steering component to steer the ion beam toward the focal point of the paralleizing component in response to measurements taken by the measurement component.

12. The system of claim 11 , the calibrated reference of beam diagnostics corresponding to drift of one or more beamlets of the ion beam after passing through one or more known slots in the implantation system.

13. The system of claim 11 , the steering component comprising at least one of

at least one pair of electrodes, and

at least one pair of electrostatic deflection plates,

and the controller adjusting the operation of the steering component by adjusting a voltage applied to least one of the at least one pair of electrodes and the at least one pair of electrostatic deflection plates.

14. The system of claim 13 , the operation of the steering component adjusted based on calculated refractions of an average implant angle.

15. An ion implantation system, comprising:

a component for generating an ion beam;

a component for mass resolving the ion beam;

a steering component for steering the ion beam to a scan vertex of a scanning component located downstream of the steering component and configured to scan the ion beam;

a parallelizing component located downstream of the scanning component and configured to parallelize the scanned ion beam; and

an endstation located downstream of the parallelizing component and configured to support a workpiece that is to be implanted with ions by the scanned ion beam.

16. The system of claim 15 , a focal point of the parallelizing component corresponding to the scan vertex of the scanning component.

17. The system of claim 16 , comprising:

a measurement component configured to measure an implant angle distribution of at least one of

the ion beam relative to the mechanical surface of the workpiece, and

the ion beam relative to a calibrated reference of a beam diagnostic system; and

a controller operatively coupled to the measurement component and the steering component, and configured to adjust the operation of the steering component to steer the ion beam toward the focal point of the paralleizing component in response to measurements taken by the measurement component.

18. The system of claim 17 , the calibrated reference of beam diagnostics corresponding to drift of one or more beamlets of the ion beam after passing through one or more known slots in the implantation system.

19. The system of claim 17 , the steering component comprising at least one of

at least one pair of electrodes, and

at least one pair of electrostatic deflection plates,

and the controller adjusting the operation of the steering component by adjusting a voltage applied to least one of the at least one pair of electrodes and the at least one pair of electrostatic deflection plates.

20. The system of claim 19 , the operation of the steering component adjusted based on calculated refractions of an average implant angle.