Method for enhancing linearity of a transistor amplifier using switched capacitive loads
View Patent ↗A method and apparatus for linearizing the gain of a common-source field effect transistor (FET) amplifier. The method involves connecting a capacitive load in parallel with the gate of the FET through a switch, and opening and closing this switch depending on the voltage on the gate of the FET. The result is a FET amplifier circuit that has a substantially linear transcapacitance characteristic, making it a useful circuit for low-distortion high-power amplifiers such as xDSL line drivers.
1. A field-effect transistor (FET) amplifier, comprising:
at least one amplifying transistor;
a switched capacitive load connected in parallel to a terminal of the amplifying transistor; and
a comparator to control switching of the capacitive load to the terminal in response to a detected operating point of the amplifying transistor to substantially linearize gain of the amplifying transistor.
2. The FET amplifier of claim 1 wherein: the FET amplifier is configured as a common-source amplifier, the terminal is the gate of the amplifying transistor, the operating point is determined in accordance with the gate voltage of the amplifying transistor, and the gain is quantified in terms of output signal per unit input charge.
3. The FET amplifier of claim 2 wherein the comparator controls the switching of the capacitive load to the terminal in response to a comparison of the gate voltage to a reference voltage provided by a reference voltage generation circuit.
4. The FET amplifier of claim 3 wherein the reference voltage generation circuit is a replica biasing circuit.
5. The FET amplifier of claim 1 wherein the FET amplifier is configured as a common-gate amplifier, and the terminal is a source of the amplifying transistor.
6. The FET amplifier of claim 1 wherein the FET amplifier is configured as a common-source amplifier, and the terminal is the drain of the amplifying transistor.
7. The FET amplifier of claim 1 wherein the FET amplifier is configured as a common-gate amplifier, and the terminal is the drain of the amplifying transistor.
8. The FET amplifier of claim 1 wherein the at least one amplifying transistor is a complementary metal oxide semiconductor (CMOS) transistor.
9. The FET amplifier of claim 8 wherein the FET amplifier is a class B amplifier.
10. The FET amplifier of claim 8 wherein the FET amplifier is a class AB amplifier.
11. A line driver for an xDSL network comprising a plurality of FET amplifiers according to claim 8 .
12. A method of linearizing the gain of a transistor amplifier, comprising:
monitoring an operating point of an amplifying transistor;
actively switching at least one capacitive electrical load in parallel with a terminal of the amplifying transistor in response to the operating point of the amplifying transistor.
13. The method of claim 12 wherein the amplifying transistor is a FET, the amplifier is configured as a common-source amplifier, the terminal is the gate of the amplifying transistor, the operating point is a gate voltage of the amplifying transistor, and wherein actively switching the at least one capacitive load in parallel with the terminal comprises:
comparing the gate voltage to at least one threshold voltage, and
actively switching the at least one capacitive electrical load in parallel with the terminal when the gate voltage crosses the at least one threshold voltage.
14. The method of claim 13 wherein the at least one threshold voltage is selected to substantially cancel 3rd order distortion effects.
15. The method of claim 13 wherein the at least one threshold voltage is selected to substantially cancel 5th order distortion effects.
16. The method of claim 12 wherein the amplifying transistor is a FET, the amplifier is configured as a common-source amplifier, the terminal is the drain of the amplifying transistor, the operating point is a drain voltage of the amplifying transistor, and wherein actively switching the at least one capacitive load in parallel with the terminal comprises:
comparing the drain voltage to at least one threshold voltage, and
actively switching the at least one capacitive electrical load in parallel with the terminal when the drain voltage crosses the at least one threshold voltage.
17. The method of claim 12 wherein the amplifying transistor is a FET, the amplifier is configured as a common-gate amplifier, the terminal is the source of the amplifying transistor, the operating point is a source voltage of the amplifying transistor, and wherein actively switching the at least one capacitive load in parallel with the terminal comprises:
comparing the source voltage to at least one threshold voltage, and
actively switching the at least one capacitive electrical load in parallel with the terminal when the source voltage crosses the at least one threshold voltage.
18. The method of claim 12 wherein the amplifying transistor is a FET, the amplifier is configured as a common-gate amplifier, the terminal is the drain of the amplifying transistor, the operating point is a drain voltage of the amplifying transistor, and wherein actively switching the at least one capacitive load in parallel with the terminal comprises:
comparing the drain voltage to at least one threshold voltage, and
actively switching the at least one capacitive electrical load in parallel with the terminal when the drain voltage crosses the at least one threshold voltage.
19. The method of claim 12 wherein monitoring the operating point comprises sensing a plurality of operating parameters.
20. The method of claim 19 wherein the plurality of parameters include gate voltage and drain voltage.