IP Library Granted Patent US 7,616,028
Granted Patent B2
US 7,616,028 · App. 11/942,665 · Granted Nov 10, 2009

Sense amplifier for low voltage high speed sensing

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Quick Facts
Patent No.
US 7,616,028
App. No.
11/942,665
Granted
Nov 10, 2009
Kind
B2
Abstract

A memory system includes a sense amplifier for detecting content of data memory cells by comparison with a voltage stored in a reference cell. The sense amplifier may comprise a comparator, first and second load circuits, and a low impedance circuit. A first input of the comparator is coupled to the low impedance circuit and a reference voltage node. A second input of the comparator is coupled to a data voltage node. The first load circuit loads a reference cell coupled to the reference voltage node. The second load circuit loads a data cell coupled to the data voltage node.

Claims (27)

1. A method of sensing for a memory system, the method comprising:

setting, via a bias circuit, a bias to a first input of a comparator, wherein the first input is coupled to a floating voltage node;

providing a current output to a second input of the comparator from a node that is directly connected to the second input, the current output being equal to a difference between a reference current and a data current;

comparing a dynamic reference voltage with the current output; and

holding, via a capacitor coupled to the comparator, a reference voltage level of the comparator during sensing.

2. The method of claim 1 wherein the dynamic reference voltage is from an impedance circuit.

3. The method of claim 1 wherein the dynamic reference voltage is provided via reference to a ratio of power supplies.

4. A sense amplifier comprising:

a comparator including a first input coupled to a floating voltage node, and including a second input directly connected to a node having a current output, the current output equal to a difference between a reference current and a data current;

a bias circuit for setting a bias to the first input; and

a capacitor coupled to the comparator to hold a reference voltage level of the comparator during sensing.

5. The sense amplifier of claim 4 , wherein the bias is selectively applied by the bias circuit.

6. The sense amplifier of claim 5 , wherein the bias circuit includes a resistor divider.

7. The sense amplifier of claim 4 , wherein the capacitor is coupled to the first input of the comparator and serves to maintain the first input at the reference voltage level independent of power supply fluctuations and/or effects from operation of other circuitry connected to the first input.

8. The sense amplifier of claim 4 , further comprising one or more filter components configured to generate a filtered bias voltage as the bias for application to the first input during operation of the sense amplifier.

9. The sense amplifier of claim 4 , further comprising an impedance circuit coupled to the comparator, wherein the impedance circuit is configured to selectively apply a voltage to the first input of the comparator.

10. The sense amplifier of claim 4 , wherein the bias circuit includes a resistor divider.

11. The sense amplifier of claim 7 , wherein the bias is selectively applied by the bias circuit.

12. The sense amplifier of claim 11 wherein the bias circuit includes a resistor divider.

13. The sense amplifier of claim 7 , further comprising one or more filter components configured to generate a filtered bias voltage for use by the sense amplifier.

14. The sense amplifier of claim 7 , further comprising an impedance circuit coupled to the comparator, wherein the impedance circuit is configured to selectively apply a voltage to the first input of the comparator.

15. The sense amplifier of claim 7 , wherein the bias circuit includes a resistor divider.

16. The sense amplifier of claim 5 , further comprising one or more filter components configured to generate a filtered bias voltage for use by the sense amplifier.

17. The sense amplifier of claim 5 , further comprising an impedance circuit coupled to the comparator, wherein the impedance circuit is configured to selectively apply a voltage to the first input of the comparator.

18. The sense amplifier of claim 6 , further comprising one or more filter components configured to generate a filtered bias voltage for use by the sense amplifier.

19. The sense amplifier of claim 6 , further comprising an impedance circuit coupled to the comparator, wherein the impedance circuit is configured to selectively apply a voltage to the first input of the comparator.

20. The sense amplifier of claim 10 , further comprising an impedance circuit coupled to the comparator, wherein the impedance circuit is configured to selectively apply a voltage to the first input of the comparator.

Assignments (15)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: SILICON STORAGE TECHNOLOGY, INC.
Reel/Frame 059687/0344 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: SILICON STORAGE TECHNOLOGY, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041675/0316 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2009
From: TRAN, HIEU VAN; NGUYEN, SANG THANH; NGUYEN, HUNG Q.
To: SILICON STORAGE TECHNOLOGY, INC.
Reel/Frame 023225/0430 →