Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode

1. An anode for performing electrolytic copper plating, comprising a phosphorus copper anode for use in performing electroplating to a semiconductor wafer, said phosphorus copper anode having a crystal grain size within a range of greater than 1,500 μm to 20,000 μm and a phosphorous content exceeding 50 wtppm and not greater than 2,000 wtppm, and said phosphorous copper anode being in the form of a plate.

2. A phosphorous copper anode for electrolytic copper plating according to claim 1 , wherein the plate has approximately the same widthwise dimension as an 8 inch semiconductor wafer which forms a cathode for electrolytic copper plating.

3. A phosphorous copper anode for electrolytic copper plating according to claim 2 , wherein phosphorous content of the phosphorous copper anode is 500 wtppm.

4. A phosphorous copper anode for electrolytic copper plating according to claim 1 , wherein phosphorous content of the phosphorous copper anode is 500 to 1,000 wtppm.

5. A phosphorous copper anode according to claim 4 , wherein said crystal grain size is within a range of greater than 1,500 μm to 5,000 μm.

6. A phosphorous copper anode according to claim 4 , wherein said crystal grain size is 1,800 μm to 5,000 μm.

7. A phosphorous copper anode according to claim 4 , wherein said crystal grain size is 18,000 μm to 20,000 μm.

8. A phosphorous copper anode for electrolytic copper plating according to claim 1 , further comprising a black film of copper phosphide or copper chloride formed on a surface of said anode.

9. A phosphorous copper anode for electrolytic copper plating according to claim 8 , wherein said black film is of a thickness that suppresses the generation of metallic oxide and copper oxide caused by disproportionation reaction of monovalent copper during dissolution of said anode during electrolytic plating.

10. An electrolytic copper plating method, comprising the steps of electrolytic copper plating an object and employing a phosphorous copper anode during said plating, the phosphorus copper anode having a crystal grain size within a range of greater than 1,500 μm to 20,000 μm and a phosphorous content exceeding 50 wtppm and not greater than 2,000 wtppm, and said phosphorous copper anode being in the form of a plate.

11. An electrolytic copper plating method according to claim 10 , wherein said object is a semiconductor wafer.

12. An electrolytic copper plating method according to claim 10 , wherein phosphorous content of the phosphorous copper anode is 100 to 1,000 wtppm.

13. An electrolytic copper plating method according to claim 12 , wherein said object is a semiconductor wafer.

14. An electrolytic copper plating method according to claim 13 , wherein said crystal grain size of said phosphorous copper anode is within a range of greater than 1,500 μm to 5,000 μm during said plating.

15. An anode for performing electrolytic copper plating to a cathode provided as a semiconductor wafer, said anode consisting of a plate-shaped phosphorus copper anode having a widthwise dimension substantially the same as an 8 inch semiconductor wafer, a crystal grain size of 1,500 μm to 20,000 μm, and an exposed black film of copper phosphide or copper chloride formed on an outer surface of said anode, a phosphorous content of said phosphorous copper anode being 50 to 2,000 wtppm.

16. A phosphorous copper anode for electrolytic copper plating according to claim 15 , wherein phosphorous content of the phosphorous copper anode is 500 wtppm.

17. A phosphorous copper anode for electrolytic copper plating according to claim 15 , wherein said crystal grain size is within a range of greater than 1,500 μm to 20,000 μm.