Stabilized, non-aqueous cleaning compositions for microelectronics substrates
View Patent ↗Non-aqueous stripping and cleaning compositions for cleaning microelectronics devices, the composition having a least one organic sulfur-containing polar compound as a stripping solvent, at least one water-free source of a strong hydroxide base, and at least one hydroxypyridine stabilizing agent to inhibit detrimental side reactions.
1. A non-aqueous stripping and cleaning composition for cleaning microelectronics devices, the composition comprising:
a) at least one organic sulfur-containing polar compound as stripping solvent,
b) at least one water-free source of a strong hydroxide base, and
c) at least one hydroxypyridine stabilizing agent.
2. A composition according to claim 1 wherein the at least one organic sulfur-containing polar compound as stripping solvent is present in the composition in an amount of from about 20 wt % to about 99 wt %, based on the weight of the composition, the water free source of a strong hydroxide base is present in the composition in an amount of from about 0.5 wt % to about 20 wt % based on the weight of the composition, and the hydroxypyridine is present in the composition in an amount of from about 0.01 wt % to about 5 wt % based on the weight of the composition.
3. A composition according to claim 2 wherein the at least one at least one organic sulfur-containing polar compound as stripping solvent is selected from the group consisting of sulfoxides, sulfones, sulfolanes, and mixtures thereof; the water free source of a strong hydroxide base is selected from alkaline hydroxides, ammonium hydroxide, and quaternary ammonium hydroxides and mixtures thereof; and the at least one hydroxypyridine is selected from 2-hydroxypyridine, 4-hydroxypyridine and mixtures thereof.
4. A composition according to claim 3 wherein the at least one at least one organic sulfur-containing polar compound as stripping solvent is selected from the group consisting of dimethyl sulfoxide, sulfolane, and mixtures thereof; the water free source of a strong hydroxide base is selected from tetraalkylammonium hydroxides; and the at least one hydroxypyridine is selected from 2-hydroxypyridine.
5. A composition according to claim 4 wherein the composition comprises dimethyl sulfoxide, sulfolane, tetramethylammonium hydroxide and 2-hydroxypyridine.
6. A composition according to claim 5 the composition also comprises propylene glycol.
7. A composition according to claim 6 wherein the dimethyl sulfoxide is present in an amount of about 66 wt %, the sulfolane is present in an amount of about 17.4 wt %, the tetramethylammonium hydroxide is present in an amount of about 2.4 wt %, the propylene glycol is present in an amount of about 14 wt %, and the 2-hydroxypyridine is present in an amount of about 0.2 wt %.
8. A composition according to claim 1 additionally comprising one or more components selected from the group consisting of: metal-chelating or complexing agents, co-solvents, corrosion resisting compounds, and surface-active agents or surfactants.
9. A method for cleaning a microelectronic device substrate without producing any substantial metal corrosion, the process comprising contacting the device with a cleaning composition for a time sufficient to clean the device, wherein the cleaning composition comprises a composition of claim 1 .
10. A method for cleaning a microelectronic device substrate without producing any substantial metal corrosion, the process comprising contacting the device with a cleaning composition for a time sufficient to clean the device, wherein the cleaning composition comprises a composition of claim 2 .
11. A method for cleaning a microelectronic device substrate without producing any substantial metal corrosion, the process comprising contacting the device with a cleaning composition for a time sufficient to clean the device, wherein the cleaning composition comprises a composition of claim 3 .
12. A method for cleaning a microelectronic device substrate without producing any substantial metal corrosion, the process comprising contacting the device with a cleaning composition for a time sufficient to clean the device, wherein the cleaning composition comprises a composition of claim 4 .
13. A method for cleaning a microelectronic device substrate without producing any substantial metal corrosion, the process comprising contacting the device with a cleaning composition for a time sufficient to clean the device, wherein the cleaning composition comprises a composition of claim 5 .
14. A method for cleaning a microelectronic device substrate without producing any substantial metal corrosion, the process comprising contacting the device with a cleaning composition for a time sufficient to clean the device, wherein the cleaning composition comprises a composition of claim 6 .
15. A method for cleaning a microelectronic device substrate without producing any substantial metal corrosion, the process comprising contacting the device with a cleaning composition for a time sufficient to clean the device, wherein the cleaning composition comprises a composition of claim 7 .
16. A method for cleaning a microelectronic device substrate without producing any substantial metal corrosion, the process comprising contacting the device with a cleaning composition for a time sufficient to clean the device, wherein the cleaning composition comprises a composition of claim 8 .