Elevated temperature RF ion source
View Patent ↗An elevated temperature RF ion source system, comprising an ion source body, an RF antenna coil external to the ion source body, a vacuum enclosure surrounding both the outside surface of the ion source body and the RF antenna coil, at least one power supply, a gas delivery system operatively coupled to the ion source body, a vacuum condition between the outside surface of the ion source body and the RF antenna coil, the RF antenna coil operatively coupled to the at least one power supply, and a water cooling system operatively coupled to the RF antenna coil and the vacuum enclosure.
1. An elevated temperature RF ion source system, comprising:
an ion source body;
wherein the ion source body comprises a hollow body forming a plasma enclosure;
an RF antenna coil configured external to the ion source body;
wherein the RF antenna coil is wrapped around but not in contact with the hollow body;
a vacuum enclosure surrounding both the outside surface of the ion source body and the RF antenna coil;
at least one power supply;
a gas delivery system operatively coupled to the ion source body;
the RF antenna coil operatively coupled to the at least one power supply; and
a fluid cooling system operatively coupled to the RF antenna coil, wherein the fluid cooling system comprises a fluid cooled flange in thermal communication with the RF antenna coil.
2. The elevated temperature RF ion source system of claim 1 , the hollow body comprises at least one of the following shapes: conical, spherical, rectangular, octagonal and cylindrical.
3. The elevated temperature RF ion source system of claim 1 , the RF antenna coil during operation is at a temperature 100 degrees Celsius or less.
4. The elevated temperature RF ion source system of claim 1 , the ion source body during operation is at a temperature of 300 degrees Celsius or greater.
5. The elevated temperature RF ion source system of claim 1 , the ion source body comprises in part at least one of the following materials: Alumina, Quartz, Boron Nitride and other refractory dielectrics.
6. The elevated temperature RF ion source system of claim 1 , the RF antenna coil comprises at least one of the following materials: copper, aluminum and other highly conductive metals.
7. The elevated temperature RF ion source system of claim 1 , the gas employed by the gas delivery system comprises at least one of the following: arsine, phosphine, boron trifluoride, B 10 H 14 and B 18 H 22 .
8. The elevated temperature RF ion source system of claim 1 , the vacuum enclosure vacuum level is 1 mTorr or less.
9. An elevated temperature RF ion source system, comprising:
an ion source including an ion source body and an RF antenna partially internal to said ion source body;
at least one power supply operatively coupled to said RF antenna;
a heater element operatively coupled to said ion source body;
a cooling component operatively coupled to the RF antenna coil and said source body,
wherein the cooling component comprises a fluid cooled flange in thermal communication with the RF antenna coil;
a gas delivery component operatively coupled to said source body; and
a vacuum component operatively coupled to said ion source body for creating a vacuum condition therein.
10. The elevated temperture RF ion source system of claim 9 , further comprising insulation tubing surrounding said RF antenna.
11. The elevated temperture RF ion source system of claim 9 , further comprising at least one antenna support for maintaining said RF antenna in a substantially centered position within the insulation tubing.
12. The elevated temperature RF ion source system of claim 9 , wherein the ion source body comprises at least one of the following materials: aluminum, stainless steel, molybdenum, tantalum and tungsten.
13. The elevated temperature RF ion source system of claim 9 , wherein the ion source body is conductively coupled to the source flange.
14. The elevated temperature RF ion source system of claim 9 , wherein the RF antenna comprises at least one of the following materials: copper, aluminum and other highly conductive metals.
15. The elevated temperature RF ion source system of claim 10 , wherein the tubing comprises at least one of the following materials: synthetic sapphire, sapphire, quartz, alumina, Boron Nitride and glass.
16. The elevated temperature RF ion source system of claim 9 , wherein during operation, the RF antenna is vacuum isolated from the insulator tubing.
17. The elevated temperature RF ion source system of claim 9 , wherein during B 18 H 22 operation, the ion source body is at a temperature approximately between 130 degrees Celsius and 160 degrees Celsius.
18. The elevated temperature RF ion source system of claim 9 , wherein during multi-species operation, the ion source body is at a temperature approximately between 290 degrees Celsius and 500 degrees Celsius.
19. The elevated temperature RF ion source system of claim 11 , wherein the at least one antenna support comprises at least one of the following: alumina, glass, quartz and other refractory dielectrics.
20. The elevated temperature RF ion source system of claim 9 , wherein the cooling component is thermally coupled to the RF antenna coil via one or more thermally conducting support rods connecting the fluid cooled flange and the ion source body.
21. The elevated temperature RF ion source system of claim 20 , wherein the fluid comprises water.
22. The elevated temperature RF ion source system of claim 1 , wherein the fluid comprises water.