Chip scale package having flip chip interconnect on die paddle
A flip chip lead frame package includes a die and a lead frame having a die paddle and leads, and has interconnection between the active site of the die and the die paddle. Also, methods for making the package are disclosed.
1. A method of making a flip chip lead frame package, comprising:
providing a die paddle disposed at a first level and having an array of interconnect sites disposed in a central area of the die paddle, the array of interconnect sites formed as islands by patterned etching to have a height above the first level of the die paddle;
disposing a plurality of leads at a second level on each side apart from the die paddle, the second level being different than the first level of the die paddle and substantially equal to the first level plus the height of the islands;
disposing a semiconductor die having an active surface on the die paddle with the active surface facing the die paddle;
electrically connecting the semiconductor die to the plurality of leads; and
electrically connecting the semiconductor die to the array of interconnect sites on the die paddle with thermo-compression bonds, the thermo-compression bonds being formed by pressing bumps formed on the active surface of the semiconductor die against the array of interconnect sites on the die paddle and heating the bumps and interconnect sites to a temperature to form a metallurgical connection without melting the bumps, wherein the thermo-compression bonds provide heat transfer from the semiconductor die to the die paddle.
2. The method of claim 1 , wherein the bumps on the semiconductor die are made with gold.
3. The method of claim 1 , wherein the bumps on the semiconductor die are copper plated with gold or nickel.
4. The method of claim 1 , wherein the bumps on the semiconductor die are electroless nickel and gold.
5. The method of claim 1 , wherein the array of interconnect sites are made with tin.
6. The method of claim 1 , wherein the lead frame is made with copper and plated with a metal selected from the group consisting of tin, nickel, silver, and palladium.
7. A method of making a semiconductor package, comprising:
forming a leadframe by,
(a) providing a die paddle disposed at a first level and having an array of interconnect sites disposed in a central area of the die paddle, the array of interconnect sites formed as islands by patterned etching to have a height above the first level of the die paddle, and
(b) disposing a plurality of leads at a second level on each side apart from the die paddle, the second level being different than the first level of the die paddle and substantially equal to the first level plus the height of the islands;
disposing a semiconductor die having an active surface on the die paddle;
electrically connecting the semiconductor die to the plurality of leads; and
electrically connecting the semiconductor die to the array of interconnect sites on the die paddle with thermo-compression bonds, the thermo-compression bonds being formed by pressing bumps formed on the active surface of the semiconductor die against the array of interconnect sites on the die paddle and heating the bumps and interconnect sites to a temperature to form a metallurgical connection without melting the bumps.
8. The method of claim 7 , wherein the thermo-compression bonds provide heat transfer from the semiconductor die to the die paddle.
9. The method of claim 7 , wherein the bumps on the semiconductor die are copper plated with gold or nickel.
10. The method of claim 7 , wherein the bumps on the semiconductor die are electroless nickel and gold.
11. The method of claim 7 , wherein the array of interconnect sites are made with tin.
12. The method of claim 7 , wherein the lead frame is made with copper and plated with a metal selected from the group consisting of tin, nickel, silver, and palladium.
13. A method of making a semiconductor package, comprising:
forming a leadframe by,
(a) providing a die paddle disposed at a first level and having an array of interconnect sites disposed in a central area of the die paddle, the array of interconnect sites formed as islands by patterned etching to have a height above the first level of the die paddle, and
(b) disposing a plurality of leads at a second level on each side apart from the die paddle, the second level being different than the first level of the die paddle and substantially equal to the first level plus the height of the islands;
disposing a semiconductor die having an active surface on the die paddle;
electrically connecting the semiconductor die to the plurality of leads; and
electrically connecting the semiconductor die to the array of interconnect sites on the die paddle with thermo-compression bonds which provide heat transfer from the semiconductor die to the die paddle.
14. The method of claim 13 , wherein the thermo-compression bonds are formed by pressing bumps on the active surface of the semiconductor die against the array of interconnect sites on the die paddle and heating the bumps and interconnect sites to a temperature to form a metallurgical connection without melting the bumps.
15. The method of claim 14 , wherein the bumps on the semiconductor die are copper plated with gold or nickel.
16. The method of claim 14 , wherein the bumps on the semiconductor die are electroless nickel and gold.
17. The method of claim 13 , wherein the array of interconnect sites are made with tin.
18. The method of claim 13 , wherein the lead frame is made with copper and plated with a metal selected from the group consisting of tin, nickel, silver, and palladium.
19. A method of making a semiconductor package, comprising:
forming a leadframe by providing a die paddle disposed at a first level and having an array of interconnect sites disposed in a central area of the die paddle, the array of interconnect sites formed as islands by patterned etching to have a height above the first level of the die paddle;
disposing a plurality of leads at a second level on each side apart from the die paddle, the second level being different than the first level of the die paddle and substantially equal to the first level plus the height of the islands;
disposing a semiconductor die having an active surface on the die paddle;
electrically connecting the semiconductor die to the plurality of leads; and
electrically connecting the semiconductor die to the array of interconnect sites on the die paddle with thermo-compression bonds which provide heat transfer from the semiconductor die to the die paddle.
20. The method of claim 19 , including:
disposing a plurality of leads on each side apart from the die paddle; and
electrically connecting the semiconductor die to the plurality of leads.
21. The method of claim 19 , wherein the thermo-compression bonds are formed by pressing bumps on the active surface of the semiconductor die against the array of interconnect sites on the die paddle and heating the bumps and interconnect sites to a temperature to form a metallurgical connection without melting the bumps.
22. The method of claim 21 , wherein the bumps on the semiconductor die are copper plated with gold or nickel.
23. The method of claim 21 , wherein the bumps on the semiconductor die are electroless nickel and gold.
24. The method of claim 19 , wherein the array of interconnect sites are made with tin.
25. The method of claim 19 , wherein the lead frame is made with copper and plated with a metal selected from the group consisting of tin, nickel, silver, and palladium.