IP Library Granted Patent US 7,842,931
Granted Patent B2
US 7,842,931 · App. 12/238,265 · Granted Nov 30, 2010

Extraction electrode manipulator

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Quick Facts
Patent No.
US 7,842,931
App. No.
12/238,265
Granted
Nov 30, 2010
Kind
B2
Abstract

An extraction electrode manipulator system, comprising an ion source, a suppression electrode and a ground electrode, wherein the two electrode are supported by coaxially arranged two water cooled support tubes. A high voltage insulator ring is located on the other end of the coaxial support tube system to act as a mechanical support of the inner tube and also as a high voltage vacuum feedthrough to prevent sputtering and coating of the insulating surface.

Claims (40)

1. An extraction electrode manipulator system, comprising:

a suppression electrode;

wherein the suppression electrode is supported by an inner support tube of a coaxially arranged support tube system;

a ground electrode;

wherein the ground electrode is supported by an outer support tube of the coaxially arranged support tube system; and

a high voltage insulator ring;

wherein the high voltage insulating ring is located on the far end of the coaxially arranged support tube system and acts as mechanical support of the coaxial support system and also as a high voltage vacuum feedthrough.

2. The system of claim 1 , wherein both the support tubes in the coaxially arranged support system are water cooled to minimize thermal expansion.

3. The system of claim 1 , wherein one high voltage insulator acts

as a mechanical support of an electrode and also as a high voltage vacuum feedthrough.

4. The system of claim 1 , wherein the insulator ring is made of a material comprising ceramic and plastic.

5. The system of claim 1 , wherein the inner support tube is made of a material comprising stainless steel, aluminum, molybdenum and refractory metals.

6. The system of claim 1 , wherein the outer support tube is made of a material comprising stainless steel, aluminum, molybdenum and refractory metals.

7. The system of claim 1 , wherein both support tubes in the coaxially arranged support system are water cooled to minimize thermal expansion.

8. The system of claim 7 wherein one high voltage insulating standoff acts as a mechanical support of an electrode and also as a high voltage vacuum feedthrough.

9. The system of claim 1 , wherein the insulator ring is cylindrical with a center opening for the inner water cooled support tube to pass through the insulating standoff.

10. The system of claim 1 , wherein the insulator ring is made of a material comprising ceramic.

11. The system of claim 1 , wherein the inner support tube is made of a material comprising stainless steel, aluminum, molybdenum and refractory metals.

12. The system of claim 1 , wherein the outer support tube is made of a material comprising stainless steel, aluminum, molybdenum and refractory metals.

13. An ion implantation system, comprising:

an ion beam source comprising an extraction electrode manipulator system;

a suppression electrode;

wherein the suppression electrode is supported by an inner support tube of coaxially arranged support tube system;

a ground electrode;

wherein the ground electrode is supported by an outer support tube of coaxially arranged support tube system;

a high voltage insulator ring; and

wherein the high voltage insulator ring is located on the far end of coaxially arranged support tube system and acts as mechanical support of the coaxial support system and also as a high voltage vacuum feedthrough;

a beam line assembly receives an ion beam from the source comprising;

a mass analyzer that selectively passes selected ions; and

an end station that receives the ion beam from the beam line assembly.

14. An extraction electrode manipulator system, comprising:

a coaxially arranged support tube system comprising an inner tube and an outer tube, the support tube system comprising a first end and a second end;

a suppression electrode connected to the first end of one of the inner tube and the outer tube, and a ground electrode connected to the first end of the other of the inner tube and the outer tube; and

an insulator ring located at the second end of the support tube system, and configured to mechanically support the support tube system.

15. The system of claim 14 , further comprising a controller configured to independently control the inner and outer tubes of the coaxially arranged support tube system, thereby altering a vertical position of an aperture of either the suppression electrode or the ground electrode, or both, with respect to an ion beam.

16. The system of claim 15 , wherein the controller is further configured to control a lateral position of both the suppression electrode and the ground electrode with respect to an ion source, thereby altering a gap between the suppression electrode and the ground electrode arrangement and the ion source.

17. The system of claim 16 , wherein the controller is configured to control the lateral positioning of the suppression electrode and the ground electrode as a function of an ion beam energy.

18. The system of claim 16 , wherein the controller is configured to receive data reflecting an ion beam quality, and generate one or more control signals to alter the vertical position of either the suppression electrode or the ground electrode, or both, and/or the lateral positioning of the suppression electrode and the ground electrode in response thereto.

19. The system of claim 15 , wherein the controller is configured to receive data reflecting an ion beam quality, and generate one or more control signals to alter the vertical position of either the suppression electrode or the ground electrode, or both.

20. The system of claim 14 , wherein one or both of the inner tube and the outer tube comprise a water cooled support tube.

Assignments (6)
RELEASE OF SECURITY INTEREST Recorded Apr 7, 2023
From: SILICON VALLEY BANK A DIVISION OF FIRST-CITIZENS BANK & TRUST COMPANY
To: AXCELIS TECHNOLOGIES, INC.
Reel/Frame 063270/0277 →
SECURITY INTEREST Recorded Jul 31, 2020
From: AXCELIS TECHNOLOGIES, INC.
To: SILICON VALLEY BANK, AS ADMINISTRATIVE AGENT
Reel/Frame 053375/0055 →
FIRST AMENDMENT TO SECURITY AGREEMENT Recorded May 10, 2011
From: AXCELIS TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 026250/0524 →
SECURITY AGREEMENT Recorded Apr 8, 2010
From: AXCELIS TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 024202/0494 →
CONSENT AND LICENSE AGREEMENT Recorded Apr 17, 2009
From: AXCELIS TECHNOLOGIES, INC.
To: SEN CORPORATION
Reel/Frame 022562/0758 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 25, 2008
From: SATOH, SHU; ADAMIK, JOHN; SIERADZKI, MANNY
To: AXCELIS TECHNOLOGIES, INC.
Reel/Frame 021588/0312 →