Landing pad for use as a contact to a conductive spacer
View Patent ↗A landing pad for use as a contact to a conductive spacer adjacent a structure in a semiconductor device comprises two islands, each of which is substantially rectangularly shaped and is spaced apart from one another and from the structure. Conductive spacers are adjacent to each island and overlapping each other and overlapping with the conductive spacer adjacent to the structure. The contact to the landing pad is on the conductive spacers adjacent to the islands and spaced apart from the structure.
1. A method of detecting one or more defects in a string of spaced apart studs on a semiconductor substrate wherein each stud is separated by a distance of 2X from an adjacent stud, said method comprising:
forming a plurality of conductive spacers with each spacer formed adjacent each stud, and overlapping with an adjacent spacer, each spacer having a width of at least X; and
electrically testing the continuity of the plurality of conductive spacers;
wherein in the event of failure of the testing step, said failure is indicative of the existence of one or more defects.
2. The method of claim 1 wherein said step of forming a plurality of conductive spacers comprises:
depositing conformally a layer of conductive polysilicon over said string of studs;
anisotropically etching said layer of conductive polysilicon to form said plurality of conductive spacers.
3. A method of detecting one or more defects in a string of spaced apart holes in a semiconductor device wherein each hole is separated by a distance of 2X from an adjacent hole, said method comprising:
converting each hole into a stud;
forming a plurality of conductive spacers with each spacer formed adjacent each stud, and overlapping with an adjacent spacer, each spacer having a width of at least X; and
electrically testing the continuity of the plurality of conductive spacers;
wherein in the event of failure of the testing step, said failure is indicative of the existence of one or more defects.
4. The method of claim 3 wherein said step of forming a plurality of conductive spacers comprises:
depositing conformally a layer of conductive polysilicon over said string of studs;
anisotropically etching said layer of conductive polysilicon to form said plurality of conductive spacers.
5. The method of claim 3 wherein said converting step comprises a damascene process.