De-clamping wafers from an electrostatic chuck
One embodiment of the present invention relates to a method for declamping a semiconductor wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage. In this method, the clamping voltage is deactivated. For a time following the deactivation, a first region of the wafer is lifted an first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck. A predetermined condition is monitored during the time. The second region is lifted from the surface of the electrostatic chuck when the predetermined condition is met.
1. A method for de-clamping a wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage, comprising:
deactivating the clamping voltage;
following the deactivation, lifting and holding a first region of the wafer a first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck;
measuring an elapsed time for which the first region of the wafer is held at the first distance from the surface of the electrostatic chuck; and
selectively lifting the second region from the surface of the electrostatic chuck based on whether the elapsed time is greater than or equal to a predetermined expiration time.
2. The method of claim 1 , wherein the first distance is greater than approximately 0.1 mm and less than approximately 5 mm.
3. The method of claim 1 , wherein the clamping voltage is a direct current (DC) voltage.
4. The method of claim 1 , wherein the clamping voltage is an alternating current (AC) voltage.
5. The method of claim 4 , wherein the AC voltage is a multi-phased AC voltage that establishes an approximately constant force to adhere the wafer to the surface of the electrostatic chuck.
6. The method of claim 1 , wherein the first region corresponds to an outer edge region of the wafer.
7. The method of claim 6 , wherein the second region corresponds to a central region of the wafer.
8. A system for processing a wafer, comprising:
an electrostatic chuck comprising a one or more electrodes operable to provide an electrostatic clamping force between the wafer and a surface of the electrostatic chuck;
a power supply configured to provide a clamping voltage to the one or more electrodes; and
a lifting assembly adapted to during a first time lift a first region of the wafer a first distance from the surface of the electrostatic chuck while a second region of the wafer remains on the surface;
a controller adapted to measure an elapsed time from when the first region of the wafer is lifted from the surface of the electrostatic chuck, and provide control signals to the lifting assembly to selectively lift the entire wafer from the surface based on whether the elapsed time is greater than or equal to a predetermined expiration time.
9. The system of claim 8 , where the lifting assembly is a mechanical lifting assembly.
10. The system of claim 9 , where the mechanical lifting assembly comprises at least one pin adapted to movably extend from the surface of the electrostatic chuck to lift the wafer therefrom.
11. The system of claim 9 , member comprises an arm adapted to grasp the wafer and lift the wafer from the surface of the electrostatic chuck.
12. The system of claim 8 , where the lifting assembly comprises at least one of: an electrostatic lift assembly adapted to provide an electrostatic force to lift the wafer, or a magnetic lift assembly adapted to provide a magnetic force to lift the wafer.
13. The system of claim 8 , where the lifting assembly comprises a pressurized gas supply adapted to lift the wafer.
14. The system of claim 8 , wherein the surface of the electrostatic chuck comprises a flat plate.
15. The system of claim 8 , wherein the controller is adapted to monitor the predetermined condition by determining whether a capacitance as measured between the wafer and the electrostatic chuck favorably compares to a threshold value.
16. A method for de-clamping a wafer that is electrically adhered to a surface of an electrostatic chuck by a clamping voltage, comprising:
deactivating the clamping voltage;
for a time following the deactivation, lifting and holding a first region of the wafer a first distance from the surface of the electrostatic chuck while a second region of the wafer remains adhered to the surface of the electrostatic chuck;
during the time when the first region of the wafer is held at the first distance from the surface of the electrostatic chuck, measuring multiple successive values of a dynamic condition that changes during the time; and
after the time has elapsed, selectively lifting the second region from the surface of the electrostatic chuck based on whether one or more of the multiple successive values has a predetermined relationship with a threshold value.
17. The method of claim 16 , wherein measuring the multiple successive values comprises:
measuring multiple successive capacitance values between the wafer and the electrostatic chuck.
18. The method of claim 16 , wherein measuring the multiple successive values comprises:
providing an alternative current (AC) voltage to measure multiple successive capacitance values between the wafer and the electrostatic chuck.