Ion implantation with diminished scanning field effects
View Patent ↗Ion implantation systems and scanning systems are provided, in which a focus adjustment component is provided to adjust a focal property of an ion beam to diminish zero field effects of the scanner upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece, or to improve the consistency of the ion implantation across the workpiece. Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.
1. An ion implantation system for implanting ions in a workpiece, comprising:
an ion beam source configured to generate an ion beam;
a mass analyzer for mass analyzing the ion beam generated;
a scanner configured to scan the ion beam across the workpiece;
a focus adjustment component comprising an adjustment field configured to adjust at least one focal property of the ion beam with respect to a zero-field effect of the scanner upon the ion beam; and
a power source configured to provide a pulsed waveform to the focus adjustment component at twice a frequency of the scanner scanning of the ion beam, wherein a timing of the pulsed waveform substantially coincides with a position of the scanned ion beam that experiences the zero-field effect.
2. The ion implantation system of claim 1 , wherein the focal property comprises beam size, beam current, or both beam size and beam current.
3. The system of claim 1 , wherein the focus adjustment component adjusts the focal property to provide consistency of the focal property of the ion beam as the beam is scanned across the workpiece.
4. The system of claim 1 , wherein the focus adjustment component adjusts the focal property to provide consistency of the ion dose as the beam is scanned across the workpiece.
5. The ion implantation system of claim 1 , wherein the scanner comprises a scan field proximate to the ion beam, and wherein the focus adjustment component is configured to adjust the focal property of the ion beam in relation to the strength of the field.
6. The ion implantation system of claim 5 , wherein the adjustment field comprises an adjustment field strength such that when the scan field is below a threshold and approaching about zero, the adjustment field comprises an inverse relation to the scan field and is thereby increased.
7. The ion implantation system of claim 1 , wherein the focus adjustment component is configured to adjust the focal property of the ion beam in relation to the position of the ion beam along the scan direction axis.
8. The ion implantation system of claim 1 , wherein the focus adjustment component is configured to adjust the focal property of the ion beam in relation to the angle of incidence of the ion beam with the workpiece.
9. The ion implantation system of claim 1 , further comprising a beam profiling component configured to measure a profile property of the ion beam, wherein the focus adjustment component is configured to adjust the focal property of the ion beam according to the profile property.
10. The ion implantation system of claim 1 , wherein the focus adjustment component comprises:
one or more electric quadrupoles with focus adjustment electrodes spaced from one another around a path of the ion beam; and
a power source coupled with the focus adjustment electrodes that provides a time varying potential to at least two of the focus adjustment electrodes.
11. The ion implantation system of claim 1 , wherein the focus adjustment component comprises:
one or more magnetic quadrupoles with focus adjustment poles spaced from one another around a path of the ion beam; and
a power source coupled with the focus adjustment coils that provides a time varying current to at least one of the focus adjustment coils.
12. A scanning system for providing an ion beam to a workpiece in an ion implantations system, the scanning system comprising:
a scanner configured to receive an ion beam and to produce a scanned ion beam directed toward the workpiece;
a beam profiling component configured to measure a profile property of the ion beam;
a focus adjustment component configured to adjust a focal property of the ion beam in relation to the profile property measured by the beam profiling component;
wherein the focus adjustment component comprises an adjustment field associated therewith for counteracting zero field effects, and is configured to vary the adjustment field to adjust the focal property; and
a power source configured to provide a pulsed waveform to the focus adjustment component at twice a frequency of the scanner scanning of the ion beam, wherein a timing of the pulsed waveform substantially coincides with a position of the scanned ion beam that experiences the zero-field effect.
13. The scanning system of claim 12 , wherein the focus adjustment component is configured to adjust the focal property of the ion beam to promote the consistency of the ion beam profile scanned across the workpiece.
14. The scanning system of claim 12 , wherein the focus adjustment component is configured to adjust the focal property of the ion beam to promote the consistency of the implanted ion density across the workpiece.
15. The scanning system of claim 12 , wherein the scanner is configured to scan the ion beam along a scan direction axis substantially perpendicular to the beam path, and wherein the focus adjustment component is configured to adjust the focal property of the ion beam in relation to the position of the ion beam along the scan direction axis.
16. The ion implantation system of claim 12 , wherein the focal property comprises beam size, beam current, or both beam size and beam current.
17. The ion implantation system of claim 12 , wherein the focus adjustment component comprises:
one or more electric quadrupoles with focus adjustment electrodes spaced from one another around a path of the ion beam; and
a power source coupled with the focus adjustment electrodes that provides a time varying potential to at least two of the focus adjustment electrodes.
18. A method of providing an ion beam in an ion implantation system, the method comprising:
generating an ion beam;
scanning the ion beam generated with a scan field to produce a scanned ion beam;
measuring a focal property of the ion beam;
determining zero field effects from the focal property measured; and
adjusting the focal property of the ion beam with respect to the zero-field effects by varying an adjustment field strength generated by an adjustment field component,
wherein the adjusting of the focal property is performed by a pulsed waveform to a focus adjustment component at twice a frequency of the scanning of the ion beam, wherein a timing of the pulsed waveform substantially coincides with a position of the scanned ion beam that experiences the zero-field effect.
19. The method of claim 18 , wherein the ion beam is scanned along a scan direction axis, wherein the focal property of the ion beam is adjusted in relation to the position of the ion beam along the scan direction axis, and wherein the focal property comprises beam size, beam current, or both beam size and beam current.
20. The method of claim 18 , wherein the ion beam is scanned along a scan direction axis, the adjustment field strength is varied as a position of the ion beam along a scan direction axis is varied, and when the scan field is below a threshold and approaching about zero, the adjustment field comprises an inverse relation to the field of the scanner and is thereby increased.