Semiconductor device and method of forming IPD in fan-out level chip scale package
View Patent ↗A semiconductor wafer contains semiconductor die. A first conductive layer is formed over the die. A resistive layer is formed over the die and first conductive layer. A first insulating layer is formed over the die and resistive layer. The wafer is singulated to separate the die. The die is mounted to a temporary carrier. An encapsulant is deposited over the die and carrier. The carrier and a portion of the encapsulant and first insulating layer is removed. A second insulating layer is formed over the encapsulant and first insulating layer. A second conductive layer is formed over the first and second insulating layers. A third insulating layer is formed over the second insulating layer and second conductive layer. A third conductive layer is formed over the third insulating layer and second conductive layer. A fourth insulating layer is formed over the third insulating layer and third conductive layer.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer containing a plurality of semiconductor die;
forming a first conductive layer over the semiconductor die;
forming a resistive layer over the semiconductor die and the first conductive layer;
forming a first insulating layer over the semiconductor die and resistive layer;
singulating the semiconductor wafer to separate the semiconductor die;
mounting the semiconductor die to a temporary carrier;
depositing an encapsulant over the semiconductor die and temporary carrier;
removing the temporary carrier and a portion of the encapsulant and first insulating layer;
forming a second insulating layer over the encapsulant and first insulating layer;
forming a second conductive layer over the first insulating layer and second insulating layer;
forming a third insulating layer over the second insulating layer and second conductive layer;
forming a third conductive layer over the third insulating layer and second conductive layer; and
forming a fourth insulating layer over the third insulating layer and third conductive layer.
2. The method of claim 1 , further including removing a portion of the encapsulant and back surface of the semiconductor die.
3. The method of claim 1 , further including forming the third conductive layer over the resistive layer.
4. The method of claim 1 , further including forming the second conductive layer over the resistive layer.
5. The method of claim 1 , further including:
removing a portion of the first insulating layer to expose the resistive layer prior to singulating the semiconductor wafer; and
forming a fourth conductive layer over the resistive layer.
6. The method of claim 1 , further including forming a fifth insulating layer over a surface of the semiconductor wafer prior to forming the first conductive layer and resistive layer.
7. A method of making a semiconductor device, comprising:
providing a semiconductor wafer containing a plurality of semiconductor die;
forming a capacitor over the semiconductor die;
singulating the semiconductor wafer to separate the semiconductor die;
mounting the semiconductor die to a carrier;
depositing an encapsulant over the semiconductor die and carrier;
removing the carrier;
forming a first insulating layer over the encapsulant and semiconductor die;
forming a first conductive layer over the first insulating layer and capacitor;
forming a second insulating layer over the first insulating layer and first conductive layer;
forming a second conductive layer over the second insulating layer and first conductive layer; and
forming a third insulating layer over the second insulating layer and second conductive layer.
8. The method of claim 7 , wherein forming the capacitor includes:
forming a third conductive layer over the semiconductor die;
forming a resistive layer over the semiconductor die and the third conductive layer;
forming a fourth insulating layer over the semiconductor die and resistive layer; and
forming the first conductive layer over the fourth insulating layer.
9. The method of claim 8 , further including:
removing a portion of the fourth insulating layer to expose the resistive layer prior to singulating the semiconductor wafer; and
forming a fourth conductive layer over the resistive layer.
10. The method of claim 7 , further including forming the second conductive layer over the resistive layer.
11. The method of claim 7 , further including forming the first conductive layer over the resistive layer.
12. The method of claim 7 , further including forming a fifth insulating layer over a surface of the semiconductor wafer prior to forming the first conductive layer and resistive layer.
13. The method of claim 7 , further including forming a bump over the second conductive layer.
14. A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a capacitor over the semiconductor die;
depositing an encapsulant over the semiconductor die; and
forming an interconnect structure over the encapsulant and semiconductor die, the interconnect structure including an inductor formed a predetermined distance away from a footprint of the semiconductor die; wherein forming the interconnect structure includes:
(a) forming a first insulating layer over the encapsulant and semiconductor die,
(b) forming a first conductive layer over the first insulating layer and capacitor,
(c) forming a second insulating layer over the first insulating layer and first conductive layer,
(d) forming a second conductive layer over the second insulating layer and first conductive layer, the second conductive layer having a portion formed the predetermined distance away from the footprint of the semiconductor die and wound to operate as the inductor, and
(e) forming a third insulating layer over the second insulating layer and second conductive layer.
15. The method of claim 14 , wherein the portion of the second conductive layer wound to operate as the inductor is at least 50 micrometers away from the semiconductor die.
16. The method of claim 14 , further including forming the second conductive layer over the resistive layer.
17. The method of claim 14 , further including forming the first conductive layer over the resistive layer.
18. The method of claim 14 , further including forming a bump over the second conductive layer.
19. The method of claim 14 , wherein forming the capacitor includes:
forming a third conductive layer over the semiconductor die;
forming a resistive layer over the semiconductor die and the third conductive layer;
forming a fourth insulating layer over the semiconductor die and resistive layer; and
forming the first conductive layer over the fourth insulating layer.