Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion
View Patent ↗A microelectronic cleaning compositions of: a) from about 80% to about 99% by weight of the composition of at least one organic sulfone; b) from about 0.5% to about 19% by weight of the composition of water; and c) from about 0.5% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ion, and d) optionally at least one polyhydric alcohol is especially useful to clean etch/ash residues from microelectronic substrates or device having both Si-based anti-reflective coatings and low-k dielectrics.
1. A microelectronic substrate cleaning compositions comprising:
a) from about 80% to about 99% by weight of the composition of at least one organic sulfone;
b) from about 0.25% to about 19% by weight of the composition of water; and
c) from about 0.25% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ions
wherein the pH of the composition, as a 10% by weight aqueous solution of the composition, is 3 or less.
2. A microelectronic substrate cleaning composition according to claim 1 additionally comprising from about 1% to about 10% by weight of at least one polyhydric alcohol.
3. A microelectronic substrate cleaning composition according to claim 1 wherein the sulfone comprises sulfolane.
4. A microelectronic substrate cleaning composition according to claim 1 wherein the at least one component providing tetrafluoroborate ions comprises tetrafluoroboric acid.
5. A microelectronic substrate cleaning composition according to claim 3 wherein the at least one component providing tetrafluoroborate ions comprises tetrafluoroboric acid.
6. A microelectronic substrate cleaning composition according to claim 2 wherein at polyhydric alcohol comprises glycerol.
7. A microelectronic substrate cleaning composition according to claim 6 wherein the at least one sulfone comprises sulfolane and the at least one component providing tetrafluoroborate ions comprises tetrafluoroboric acid.
8. A process for cleaning a microelectronic substrate or device of post etch/ash residue comprises contacting the microelectronic substrate or device with a cleaning composition comprising:
a) from about 80% to about 99% by weight of the composition of at least one organic sulfone;
b) from about 0.25% to about 19% by weight of the composition of water; and
c) from about 0.25% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ions
wherein the pH of the composition, as a 10% by weight aqueous solution of the composition, is 3 or less.
9. A process according to claim 8 wherein the cleaning composition additionally comprising from about 1% to about 10% by weight of at least one polyhydric alcohol.
10. A process according to claim 8 wherein the sulfone comprises sulfolane.
11. A process according to claim 8 wherein the at least one component providing tetrafluoroborate ions comprises tetrafluoroboric acid.
12. A process according to claim 10 wherein the at least one component providing tetrafluoroborate ions comprises tetrafluoroboric acid.
13. A process according to claim 9 wherein at polyhydric alcohol comprises glycerol.
14. A process according to claim 13 wherein the at least one sulfone comprises sulfolane and the at least one component providing tetrafluoroborate ions comprises tetrafluoroboric acid.
15. A process according to claim 8 wherein the microelectronic substrate or device comprises a Si-based anti-reflective coating and a low-k dielectric.
16. A process according to claim 14 wherein the microelectronic substrate or device comprises a Si-based anti-reflective coating and a low-k dielectric.
17. A process for cleaning a microelectronic substrate or device of post etch/ash residue, photoresist and Si-based anti-reflective coating while not damaging an underlying dielectric layer or metallization of the microelectronic substrate or device, the process comprises contacting the microelectronic substrate or device with a cleaning composition comprising:
a) from about 80% to about 99% by weight of the composition of at least one organic sulfone;
b) from about 0.25% to about 19% by weight of the composition of water; and
c) from about 0.25% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ions
wherein the pH of the composition, as a 10% by weight aqueous solution of the composition, is 3 or less.
18. A process according to claim 17 wherein the composition has a pH of about 2.
19. A process according to claim 17 wherein the dielectric layer is a porous low-k dielectric layer.
20. A process according to claim 19 wherein the cleaning composition comprises HBF 4 , sulfolane and water.