IP Library Granted Patent US 8,339,187
Granted Patent B2
US 8,339,187 · App. 13/070,405 · Granted Dec 25, 2012

Charge pump systems and methods

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Quick Facts
Patent No.
US 8,339,187
App. No.
13/070,405
Granted
Dec 25, 2012
Kind
B2
Abstract

Digital multilevel memory systems and methods include a charge pump for generating regulated high voltages for various memory operations. The charge pump may include a plurality of pump stages. Aspects of exemplary systems may include charge pumps that performs orderly charging and discharging at low voltage operation conditions. Additional aspects may include features that enable state by state pumping, for example, circuitry that avoids cascaded short circuits among pump stages. Each pump stage may also include circuitry that discharges its nodes, such as via self-discharge through associated pump interconnection(s). Further aspects may also include features that: assist power-up in the various pump stages, double voltage, shift high voltage levels, provide anti-parallel circuit configurations, and/or enable buffering or precharging features, such as self-buffering and self-precharging circuitry.

Claims (39)

1. A charge pump comprising:

a plurality of pump stages arranged in a sequence of pump stages, each pump stage including an output node and a first node;

wherein at least one of the pump stages, N or a subset of the pump stages, N and one or more stages higher than N, in the sequence of pump stages, where N≧2, further comprises a transistor coupled to a previous pump stage in the sequence of pump stages to obtain a reference voltage corresponding to the previous pump stage to which the transistor is coupled;

wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N in the sequence of pump stages each further comprises a precharge circuit coupled to the output node of the corresponding pump stage in the sequence of pump stages;

wherein the precharge circuit is different from the transistor; and

wherein each said transistor discharges its corresponding pump stage in the sequence of pump stages via use of the corresponding reference voltage; and

wherein the charge pump further comprises circuitry to help drive the charge pump during a low voltage condition, the circuitry including a voltage level shifter to drive a capacitance.

2. The charge pump of claim 1 , further comprising a discharge transistor coupled with the circuitry.

3. The charge pump of claim 1 , wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N are activated in an ascending sequence, beginning with a stage closest to a supply voltage, to orderly charge a final output node.

4. The charge pump of claim 1 , wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N are activated in a descending sequence, beginning with an output node of a final stage and proceeding through each adjacent stage, to orderly discharge the plurality of pump stages.

5. A charge pump comprising:

a plurality of pump stages arranged in a sequence of pump stages, each pump stage including an output node and a first node;

wherein at least one of the pump stages, N or a subset of the pump stages, N and one or more stages higher than N, in the sequence of pump stages, where N≧2, further comprises a transistor coupled to a previous pump stage in the sequence of pump stages to obtain a reference voltage corresponding to the previous pump stage to which the transistor is coupled;

wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N in the sequence of pump stages each further comprises a precharge circuit coupled to the output node of the corresponding pump stage in the sequence of pump stages;

wherein the precharge circuit is different from the transistor;

wherein each said transistor discharges its corresponding pump stage in the sequence of pump stages via use of the corresponding reference voltage; and

wherein the charge pump further comprises circuitry including an anti-parallel capacitor circuit to help drive the charge pump during a low voltage condition.

6. The charge pump of claim 5 , wherein the anti-parallel capacitor circuit includes a PMOS transistor and an NZMOS transistor, with a gate of the PMOS transistor coupled to a source or a drain of the NZMOS transistor, and a gate of the NZMOS transistor coupled to a source or a drain of the PMOS transistor.

7. The charge pump of claim 6 , wherein the NZMOS transistor is a native NZMOS transistor.

8. The charge pump of claim 5 , wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N are activated in an ascending sequence, beginning with a stage closest to a supply voltage, to orderly charge a final output node.

9. The charge pump of claim 5 , wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N are activated in a descending sequence, beginning with an output node of a final stage and proceeding through each adjacent stage, to orderly discharge the plurality of pump stages.

10. A charge pump comprising:

a plurality of pump stages arranged in a sequence of pump stages, each pump stage including an output node and a first node;

wherein at least one of the pump stages, N or a subset of the pump stages, N and one or more stages higher than N, in the sequence of pump stages, where N≧2, further comprises a transistor coupled to a previous pump stage in the sequence of pump stages to obtain a reference voltage corresponding to the previous pump stage to which the transistor is coupled;

wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N in the sequence of pump stages each further comprises a precharge circuit coupled to the output node of the corresponding pump stage in the sequence of pump stages;

wherein the precharge circuit is different from the transistor;

wherein each said transistor discharges its corresponding pump stage in the sequence of pump stages via use of the corresponding reference voltage; and

wherein the charge pump further comprises circuitry to help drive the charge pump during a low voltage condition, the circuitry including a voltage doubler adapted to drive a capacitance sufficient to overcome the low voltage condition.

11. The charge pump of claim 10 , wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N are activated in an ascending sequence, beginning with a stage closest to a supply voltage, to orderly charge a final output node.

12. The charge pump of claim 11 , wherein the circuitry to help drive the charge pump during a low voltage condition further includes an anti-parallel capacitor configuration.

13. The charge pump of claim 12 , wherein the anti-parallel capacitor configuration includes a PMOS transistor and an NZMOS transistor, with a gate of the PMOS transistor being coupled to a source or a drain of the NZMOS transistor, and a gate of the NZMOS transistor being coupled to a source or a drain of the PMOS transistor.

14. The charge pump of claim 13 , wherein the NZMOS transistor is a native NZMOS transistor.

15. The charge pump of claim 10 , wherein the pump stage N or the subset of pump stages N and the one or more stages higher than N are activated in a descending sequence, beginning with an output node of a final stage and proceeding through each adjacent stage, to orderly discharge the plurality of pump stages.

16. The charge pump of claim 10 , wherein the precharge circuit comprises two transistors in series with a gate of the two transistors being connected to a bias voltage sufficient to prevent high voltage breakdown of a transistor in the precharge circuit.

17. The charge pump of claim 16 , wherein the bias voltage is a self-biasing voltage.

18. The charge pump of claim 17 , wherein the bias voltage is a voltage from another output node from within the charge pump.

19. The charge pump of claim 10 , wherein the circuitry to help drive the charge pump during a low voltage condition further includes an anti-parallel capacitor circuit.

20. The charge pump of claim 19 , wherein the anti-parallel capacitor circuit includes a PMOS transistor and an NZMOS transistor, with a gate of the PMOS transistor being coupled to a source or a drain of the NZMOS transistor, and a gate of the NZMOS transistor being coupled to a source or a drain of the PMOS transistor.

21. The charge pump of claim 20 , wherein the NZMOS transistor is a native NZMOS transistor.

Assignments (14)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: SILICON STORAGE TECHNOLOGY, INC.
Reel/Frame 059687/0344 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: SILICON STORAGE TECHNOLOGY, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041675/0316 →