Active biasing in metal oxide semiconductor (MOS) differential pairs
View Patent ↗Apparatus and methods advantageously maintain transistors of open-drain differential pairs biased in the saturation region when “active,” rather in than the triode or linear region. The biasing techniques are effective over a broad range of process, voltage, and temperature (PVT) variations. By controlling a high voltage level used to drive the gate of a transistor of the differential pair, the biasing of the transistor in the saturation region is maintained. In one embodiment, the low voltage level used to cut off the transistor of the differential pair is also controlled. These techniques advantageously permit differential drivers to exhibit relatively large output swings, relatively high edge rates, relatively high return loss, and relatively good efficiency.
1. A biasing circuit for a differential driver, the biasing circuit comprising:
a pre-driver circuit configured to generate a differential output signal, wherein each portion of the differential output signal is intended to be operatively coupled to gates of first and second source-coupled transistors of the differential driver, wherein each portion of the differential output signal has a single-ended voltage swing from a first voltage level to a second voltage level for deactivating and for activating, respectively, the first and second source-coupled transistors of the differential driver, wherein the pre-driver circuit is configured to receive an adjustment signal as a reference input for the second voltage level; and
a replica transistor circuit in an open-loop circuit configuration having a replica transistor configured to be biased into a saturation region, wherein a gate voltage of the replica transistor circuit is operatively coupled to the pre-driver circuit as the adjustment signal, such that the second voltage level is adjusted to bias the activated one of the first or second source-coupled transistor of the differential driver into the saturation region and not to a triode or linear region.
2. The biasing circuit as defined in claim 1 , wherein the replica transistor is connected in a diode configuration.
3. The biasing circuit as defined in claim 2 , wherein the replica transistor circuit is further configured to provide the replica transistor with drain and source voltages that are substantially the same as that experienced by the activated transistor of the differential pair.
4. The biasing circuit as defined in claim 1 , wherein the pre-driver circuit further comprises a circuit configured to scale, to buffer, or to both scale and buffer the adjustment signal.
5. The biasing circuit as defined in claim 1 , wherein the replica transistor circuit further comprises:
a current source having a first end coupled to a first voltage reference and a second end coupled to a node, wherein the adjustment signal is present at the node;
a first resistor having a first end and a second end, wherein the first end is coupled to the node and the second end is coupled to a drain of the replica transistor such that the replica transistor is diode connected via the first resistor; and
a second resistor having a first end coupled to a source of the replica transistor and a second end coupled to a second voltage reference.
6. The biasing circuit as defined in claim 1 , wherein the replica transistor circuit further comprises:
a current source having a first end coupled to a first voltage reference and a second end coupled to a node corresponding to the adjustment signal;
a first resistor having a first end and a second end, wherein the first end is coupled to the node and the second end is coupled to a drain of the replica transistor such that the replica transistor is diode connected via the first resistor;
a second resistor having a first end coupled to a source of the replica transistor; and
a fourth transistor having a drain coupled to a second end of the second resistor, a source coupled to a second voltage reference, and a gate coupled to third voltage reference.
7. The biasing circuit as defined in claim 1 , further comprising a second replica transistor circuit having a second replica transistor, wherein the second replica transistor circuit is configured to bias the second replica transistor in the saturation region, wherein a combination of a relative scale of the second replica transistor and a biasing current passing through the second replica transistor is sufficient to bias the second replica transistor with a substantially lower gate voltage than the activated transistor of the differential pair, wherein the gate voltage of the second replica transistor is coupled to the pre-driver circuit as a reference to generate, directly or indirectly, the first voltage level.
8. The biasing circuit as defined in claim 1 , wherein the biasing circuit and the differential driver are embodied in a serializer/deserializer (SerDes).
9. A method of biasing a differential driver having a first transistor and a second transistor, the method comprising:
providing a differential drive signal to a gate of the first transistor and to a gate of the second transistor, wherein each portion of the differential drive signal is switched between a first voltage level and a second voltage level higher than the first voltage level in a complementary manner such that one of the first transistor or the second transistor receiving the first voltage level is deactivated and the other one of the first transistor or the second transistor receiving the second voltage level is activated;
biasing a replica transistor in a saturation region under similar conditions as the activated transistor of the first transistor or the second transistor;
using a gate voltage from the replica transistor as a voltage reference for the second voltage level of the differential drive such that the activated transistor is operating in the saturation region.
10. The method as defined in claim 9 , wherein the replica transistor is connected in a diode configuration.
11. The method as defined in claim 10 , further comprising providing the replica transistor with drain and source voltages that are substantially the same as that experienced by the activated transistor of the differential pair.
12. The method as defined in claim 9 , further comprising scaling, buffering, or both scaling and buffering the adjustment signal.
13. The method as defined in claim 9 , further comprising:
providing current from a current source to a node, wherein the adjustment signal is present at the node;
coupling a first end of a first resistor to the node and coupling a second end to a drain of the replica transistor such that the replica transistor is diode connected via the first resistor; and
providing a second resistor having a first end coupled to a source of the replica transistor and a second end coupled to a second voltage reference.
14. The method as defined in claim 9 , further comprising:
providing current from a current source to a node, wherein the adjustment signal is present at the node;
coupling a first end of a first resistor to the node and coupling a second end to a drain of the replica transistor such that the replica transistor is diode connected via the first resistor; and
providing a second resistor having a first end coupled to a source of the replica transistor; and
providing a fourth transistor having a drain coupled to a second end of the second resistor, a source coupled to a second voltage reference, and a gate coupled to third voltage reference.
15. The method as defined in claim 9 , further comprising electronically adjusting the first voltage level such that the inactivated transistor is cutoff, and such that the total voltage swing between the first voltage level and the second voltage level is minimized.
16. The method as defined in claim 9 , the method further comprising:
biasing a replica transistor in the saturation region, wherein a combination of a relative amount of current passing through the replica transistor and a relative scale of the replica transistor to a biasing current used and a scale of the transistors of the differential pair biases the replica transistor with a substantially lower gate voltage than the activated transistor; and
using the gate voltage from the replica transistor and a reference voltage for the second voltage level to generate a reference for the first voltage level.
17. A biasing circuit for a differential driver having a first transistor and a second transistor, the biasing circuit comprising:
means for providing a differential drive signal to a gate of the first transistor and to a gate of the second transistor, wherein each portion of the differential drive signal is switched between a first voltage level and a second voltage level higher than the first voltage level in a complementary manner such that one of the first transistor or the second transistor receiving the first voltage level is deactivated and the other one of the first transistor or the second transistor receiving the second voltage level is activated;
means for biasing a replica transistor in a saturation region under similar conditions as the activated transistor of the first transistor or the second transistor;
means for using a gate voltage from the replica transistor as a voltage reference for the second voltage level of the differential drive such that the activated transistor is operating in the saturation region.
18. The biasing circuit as defined in claim 17 , further comprising means for providing current from a current source to a node, wherein the adjustment signal is present at the node.
19. The biasing circuit as defined in claim 17 , further comprising means for scaling, means for buffering, or means for both scaling and buffering the adjustment signal.