Leakage-current compensation for a voltage regulator
In one embodiment, a method includes generating a drive current. Generation of the drive current results in a first leakage current, and the drive current and first leakage current each flow into a first node. The method also includes generating a second leakage current and amplifying the second leakage current to generate a leakage-compensation current. The leakage-compensation current flows away from the first node.
1. A circuit comprising:
a first transistor coupled to a first node, the first transistor configured to generate a drive current, generation of the drive current resulting in a first leakage current from the first transistor, the drive current and the first leakage current each flowing when generated into the first node; and
a first leakage-current compensation circuit coupled to the first node and comprising:
a second transistor configured to generate a second leakage current; and
a first current mirror comprising a third transistor and a fourth transistor, the first current mirror configured to receive and amplify the second leakage current to generate a leakage-compensation current, the leakage-compensation current flowing when generated away from the first node and through the fourth transistor of the first current mirror;
wherein the first transistor and a fifth transistor comprise a second current mirror.
2. The circuit of claim 1 , wherein an amount of the drive current generated by the first transistor is based on a difference between a reference voltage and a fraction of a voltage at the first node.
3. The circuit of claim 1 , wherein:
the second transistor comprises a p-type metal oxide semiconductor field-effect transistor (MOSFET);
a gate and a source of the second transistor are coupled to a supply voltage of the circuit; and
a drain of the second transistor is coupled to the first current mirror.
4. The circuit of claim 1 , wherein the second current mirror is configured to receive and amplify a current generated by a differential amplifier according to a difference between a reference voltage and a fraction of a voltage at the first node.
5. The circuit of claim 4 , wherein an aspect ratio of the second transistor is approximately equal to an aspect ratio of the fifth transistor.
6. The circuit of claim 5 , wherein an aspect ratio of the fourth transistor divided by an aspect ratio of the third transistor is approximately equal to an aspect ratio of the first transistor divided by the aspect ratio of the fifth transistor.
7. A method comprising:
generating, by a first transistor coupled to a first node, a drive current, generation of the drive current resulting in a first leakage current from the first transistor, the drive current and first leakage current each flowing into the first node;
generating, by a second transistor in a leakage-current compensation circuit coupled to the first node, a second leakage current; and
amplifying, by a first current mirror in the leakage-current compensation circuit, the second leakage current to generate a leakage-compensation current, the leakage-compensation current flowing away from the first node, the leakage-current compensation circuit comprising a third transistor and a fourth transistor, the first transistor and a fifth transistor comprising a second current mirror.
8. The method of claim 7 , wherein an amount of the drive current is based on a difference between a reference voltage and a fraction of a voltage at the first node.
9. The method of claim 7 , wherein:
the second transistor comprises a p-type metal oxide semiconductor field-effect transistor (MOSFET);
a gate and a source of the second transistor are coupled to a supply voltage; and
a drain of the second transistor is coupled to the first current mirror.
10. The method of claim 7 , further comprising the second current mirror amplifying a current generated by a differential amplifier according to a difference between a reference voltage and a fraction of a voltage at the first node.
11. The method of claim 7 , wherein an aspect ratio of the second transistor is approximately equal to an aspect ratio of the fifth transistor.
12. The method of claim 11 , wherein an aspect ratio of the fourth transistor divided by an aspect ratio of the third transistor is approximately equal to an aspect ratio of the first transistor divided by the aspect ratio of the fifth transistor.
13. A transceiver comprising:
a circuit comprising:
a first transistor coupled to a first node, the first transistor configured to generate a drive current, generation of the drive current resulting in a first leakage current from the first transistor, the drive current and the first leakage current each flowing when generated into the first node; and
a leakage-current compensation circuit coupled to the first node and comprising:
a second transistor configured to generate a second leakage current; and
a first current mirror comprising a third transistor and a fourth transistor, the first current mirror configured to receive and amplify the second leakage current to generate a leakage-compensation current, the leakage-compensation current flowing when generated away from the first node and through the fourth transistor of the first current mirror;
a transmitter configured to use at least a first portion of the drive current while transmitting data; and
a receiver configured to use at least a second portion of the drive current while receiving data;
wherein the first transistor and a fifth transistor comprise a second current mirror.
14. The transceiver of claim 13 , wherein the transmitter and receiver are coupled to a local interconnect network (LIN).
15. The transceiver of claim 13 , wherein the transmitter and receiver are coupled to a local interconnect network (LIN) of an automobile.
16. The transceiver of claim 13 , wherein an amount of drive current generated by the first transistor is based on a difference between a reference voltage and a fraction of a voltage at the first node.
17. The transceiver of claim 13 , wherein:
the second transistor comprises a p-type metal oxide semiconductor field-effect transistor (MOSFET);
a gate and a source of the second transistor are coupled to a supply voltage of the circuit; and
a drain of the second transistor is coupled to the first current mirror.