IP Library Granted Patent US 8,497,667
Granted Patent B2
US 8,497,667 · App. 13/306,950 · Granted Jul 30, 2013

Fast voltage regulators for charge pumps

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Quick Facts
Patent No.
US 8,497,667
App. No.
13/306,950
Granted
Jul 30, 2013
Kind
B2
Abstract

A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.

Claims (43)

1. A voltage regulator comprising:

reference circuitry including:

a voltage divider including a first terminal coupled to a supply voltage terminal, including a second terminal coupled to a ground terminal, and including a third terminal providing a voltage between the supply voltage and ground; and

a first transistor of a first type, the first transistor having a current bias and including first and second terminals spaced apart with a channel therebetween, and including a gate for controlling current in said channel, said first terminal being coupled to the first terminal of the voltage divider, said second terminal being coupled to the third terminal of the voltage divider, said gate being coupled to said second terminal;

second circuitry coupled to a high voltage terminal and to said reference circuitry, the high voltage terminal being separate from the supply voltage, the second circuitry generating a signal to a first output terminal in response to the reference circuit and arranged to provide a second current proportional to the current bias; and

an output stage coupled to the second circuitry, the output stage comprising:

a first output transistor of the first type having a current that is a mirror of the current bias, the first output transistor being coupled to an output node of the voltage regulator; and

a second output transistor having a gate coupled to a first output terminal of the second circuitry, the output being regulated by the first output transistor, wherein the second output transistor is coupled between the high voltage terminal and the output node.

2. The voltage regulator of claim 1 wherein the reference circuitry comprises a diode connected transistor to generate a first voltage associated with the current bias and the second circuitry comprises a plurality of diode connected transistors to generate a second voltage on the output of the second circuitry as a function of the high voltage and the second current.

3. The voltage regulator of claim 1 wherein the second circuitry comprises a plurality of diode connected transistors to set a voltage on the output of the second circuitry in response to a charge pump voltage applied to the high voltage terminal.

4. The voltage regulator of claim 1 wherein the second circuitry includes a diode connected NMOS transistor coupled to the first output terminal of the second circuitry.

5. The voltage regulator of claim 1 wherein the first output transistor is a PMOS transistor and the second output transistor is an NMOS transistor, arranged in the output stage as a push pull source follower to drive large capacitive loads in either direction and form an output terminal.

6. The voltage regulator of claim 1 wherein the reference circuitry includes low impedance circuitry coupled to said supply voltage and generating a reference current.

7. The voltage regulator of claim 6 wherein the low impedance circuitry includes a resister divider.

8. A voltage regulator comprising:

reference circuitry including:

a voltage divider including a first terminal coupled to a supply voltage terminal, including a second terminal coupled to a ground terminal, and including a third terminal providing a voltage between the supply voltage and ground; and

a first transistor of a first type, the first transistor having a current bias and including first and second terminals spaced apart with a channel therebetween, and including a gate for controlling current in said channel, said first terminal being coupled to the first terminal of the voltage divider and said gate being coupled to the third terminal of the voltage divider;

second circuitry coupled to a high voltage terminal and to said reference circuitry, the high voltage terminal being separate from the supply voltage, the second circuitry generating a signal to a first output terminal in response to the reference circuitry and arranged to provide a second current proportional to the current bias; and

an output stage coupled to the second circuitry, the output stage comprising:

a first output transistor of the first type coupled to a node associated with the current bias of the first transistor, the first output transistor being biased by the current bias, wherein the first output transistor is coupled to an output node of the voltage regulator; and

a second output transistor having a gate coupled to a first output terminal of the second circuitry, the output being regulated by the first output transistor, wherein the second output transistor is coupled between the high voltage terminal and the output node.

9. The voltage regulator of claim 8 wherein said reference circuitry comprises a diode connected transistor to generate a first voltage and said second circuitry comprises a plurality of diode connected transistors to generate a second voltage.

10. The voltage regulator of claim 8 the reference circuitry further comprising a low impedance circuit coupled to said supply voltage and generating a reference current.

11. The voltage regulator of claim 10 wherein the low impedance circuit includes a resistor divider.

12. The voltage regulator of claim 8 further comprising a filter coupled between the first supply voltage terminal and the first terminal of the voltage divider.

13. The voltage regulator of claim 8 wherein the voltage divider includes a resistor divider.

14. The voltage regulator of claim 8 wherein the output stage further comprises a native transistor coupled between the output node and the supply voltage.

15. The voltage regulator of claim 8 wherein the output of the second circuitry biases the second output transistor, which is arranged as a source follower, and which may drive a large capacitive load.

16. A voltage regulator comprising:

reference circuitry including:

a divider circuit including a first terminal coupled to a supply voltage terminal, including a second terminal coupled to a ground terminal, and including a third terminal providing a voltage between the supply voltage and ground; and

a first transistor of a first type, the first transistor having a current bias and including first and second terminals spaced apart with a channel therebetween, and including a gate for controlling current in said channel, said first terminal being coupled to the first terminal of the voltage divider and said gate being coupled to the third terminal of the voltage divider;

second circuitry coupled to a high voltage terminal and to said reference circuitry, the high voltage terminal being separate from the supply voltage, the second circuitry generating a signal to a first output terminal in response to the reference circuitry and arranged to provide a second current proportional to the current bias;

a first output stage coupled to the second circuitry, the output stage comprising:

a first output transistor of the first type coupled to a node associated with the current bias of the first transistor, wherein the first output transistor is biased by the current bias; and

a second output transistor having a gate coupled to a first output terminal of the second circuitry, the output being regulated by the first output transistor, wherein the second output transistor is coupled between the high voltage terminal and the output node; and

a second output stage coupled to the first output stage, the second output stage comprising a first transistor having a gate coupled to the gate of the first output transistor of the first output stage and a second transistor coupled to an output node of the voltage regulator.

17. The voltage regulator of claim 16 wherein said reference circuitry comprises a diode connected transistor to generate a first voltage and said second circuitry comprises a plurality of diode connected transistors to generate a second voltage.

18. The voltage regulator of claim 16 wherein the first output stage further comprises a native transistor coupled between the output node and the supply voltage.

19. The voltage regulator of claim 16 wherein the second output stage further comprises a native transistor coupled between the output node and the supply voltage.

20. The voltage regulator of claim 16 wherein the reference circuitry comprises a diode connected transistor to generate a first voltage associated with the current bias and the second circuitry comprises a plurality of diode connected transistors to generate a second voltage on the output of the second circuitry as a function of the high voltage and the second current.

21. The voltage regulator of claim 16 wherein, in the second output stage, the second transistor is an NMOS transistor arranged as a source follower buffer.

Assignments (14)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
RELEASE OF SECURITY INTEREST Recorded Mar 9, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059358/0001 →
RELEASE OF SECURITY INTEREST Recorded Feb 28, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: SILICON STORAGE TECHNOLOGY, INC.
Reel/Frame 059687/0344 →
RELEASE OF SECURITY INTEREST Recorded Feb 25, 2022
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059333/0222 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
SECURITY INTEREST Recorded Sep 18, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 047103/0206 →
SECURITY INTEREST Recorded Jun 25, 2018
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 046426/0001 →
SECURITY INTEREST Recorded Feb 10, 2017
From: SILICON STORAGE TECHNOLOGY, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 041675/0316 →