Semiconductor device and method of forming integrated passive device over semiconductor die with conductive bridge and fan-out redistribution layer

1. A method of making a semiconductor device, comprising:

providing a first semiconductor die;

forming a first inductor over the first semiconductor die;

forming a second inductor over the first inductor and aligned with the first inductor;

forming an insulating layer over the first semiconductor die and the first and second inductors; and

forming a conductive bridge over the insulating layer and electrically connected between the second inductor and the first semiconductor die.

2. The method of claim 1 , further including:

providing a second semiconductor die; and

forming a conductive layer between the first and second semiconductor die.

3. The method of claim 1 , further including forming a capacitor over the first semiconductor die.

4. The method of claim 1 , wherein the insulating layer has a first thickness outside a footprint of the first semiconductor die and a second thickness greater than the first thickness over a footprint of the first semiconductor die.

5. The method of claim 1 , wherein a thickness of the insulating layer ranges between 5 and 25 micrometers.

6. The method of claim 1 , further including forming an encapsulant over the first semiconductor die.

7. A method of making a semiconductor device, comprising:

providing a first semiconductor die;

forming a first conductive layer over the first semiconductor die;

forming an insulating layer over the first conductive layer; and

forming a second conductive layer over the insulating layer and first conductive layer to form an inductor and a portion of a capacitor.

8. The method of claim 7 , wherein a portion of the second conductive layer extends outside a footprint of the capacitor.

9. The method of claim 7 , wherein the insulating layer has a first thickness outside a footprint of the first semiconductor die and a second thickness greater than the first thickness over a footprint of the first semiconductor die.

10. The method of claim 7 , further including:

providing a second semiconductor die; and

forming a third conductive layer between the first and second semiconductor die.

11. The method of claim 7 , wherein a portion of the second conductive layer extends vertically through an opening in the insulating layer to contact the first conductive layer.

12. The method of claim 7 , wherein a thickness of the insulating layer ranges between 5 and 25 micrometers.

13. The method of claim 7 , further including forming an encapsulant over the first semiconductor die.

14. A method of making a semiconductor device, comprising:

providing a first semiconductor die;

forming a plurality of integrated passive devices (IPDs) over the first semiconductor die;

forming an insulating layer over the first semiconductor die and the IPDs; and

forming a conductive bridge over the insulating layer and electrically connected between the IPDs and the first semiconductor die.

15. The method of claim 14 , wherein forming the IPDs further includes:

forming a first inductor over the first semiconductor die; and

forming a second inductor over the first inductor and aligned with the first inductor.

16. The method of claim 14 , further including:

providing a second semiconductor die; and

forming a conductive layer between the first and second semiconductor die.

17. The method of claim 14 , further including forming a capacitor over the first semiconductor die.

18. The method of claim 14 , wherein the insulating layer has a first thickness outside a footprint of the first semiconductor die and a second thickness greater than the first thickness over a footprint of the first semiconductor die.

19. The method of claim 14 , wherein a thickness of the insulating layer ranges between 5 and 25 micrometers.

20. The method of claim 14 , further including forming an encapsulant over the first semiconductor die.

21. A semiconductor device, comprising:

a first semiconductor die;

a first inductor formed over the first semiconductor die;

a second inductor formed over the first inductor and aligned with the first inductor;

an insulating layer formed over the first semiconductor die and the first and second inductors; and

a conductive bridge formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die.

22. The semiconductor device of claim 21 , further including:

a second semiconductor die; and

a conductive layer formed between the first and second semiconductor die.

23. The semiconductor device of claim 21 , further including:

a capacitor formed over the first semiconductor die.

24. The semiconductor device of claim 21 , wherein the insulating layer has a first thickness outside a footprint of the first semiconductor die and a second thickness greater than the first thickness over a footprint of the first semiconductor die.

25. The semiconductor device of claim 21 , wherein a thickness of the insulating layer ranges between 5 and 25 micrometers.

26. A semiconductor device, comprising:

a first semiconductor die;

a first inductor formed over the first semiconductor die including a portion directly contacting the semiconductor die; and

a second inductor formed over the first inductor to align with the first inductor.

27. The semiconductor device of claim 26 , further including:

a second semiconductor die disposed over the first semiconductor die; and

a conductive layer formed between the first and second semiconductor die.

28. The semiconductor device of claim 26 , further including:

a capacitor formed over the first semiconductor die.

29. The semiconductor device of claim 26 , further including an insulating layer formed over the first semiconductor die.

30. The semiconductor device of claim 29 , wherein a thickness of the insulating layer ranges between 5 and 25 micrometers.