Semiconductor device and method of forming prefabricated EMI shielding frame with cavities containing penetrable material over semiconductor die
View Patent ↗A semiconductor device has a plurality of semiconductor die mounted to a temporary carrier. A prefabricated shielding frame has a plate and integrated bodies extending from the plate. The bodies define a plurality of cavities in the shielding frame. A penetrable material is deposited in the cavities of the shielding frame. The shielding frame is mounted over the semiconductor die such that the penetrable material encapsulates the die. The carrier is removed. An interconnect structure is formed over the die, shielding frame, and penetrable material. The bodies of the shielding frame are electrically connected through the interconnect structure to a ground point. The shielding frame is singulated through the bodies or through the plate and penetrable material to separate the die. TIM is formed over the die adjacent to the plate of the shielding frame. A heat sink is mounted over the plate of the shielding frame.
1. A semiconductor device, comprising:
a first semiconductor die;
a shielding framed disposed over the first semiconductor die, the shielding frame including a plate and a body integrated with and extending from the plate to define a cavity;
an encapsulant deposited in the cavity;
a plurality of openings formed in the shielding frame to enable excess encapsulant to escape; and
an interconnect structure formed over the first semiconductor die.
2. The semiconductor device of claim 1 , further including a conductive via formed through the encapsulant.
3. The semiconductor device of claim 1 , further including a bump formed over the first semiconductor die to electrically connect the first semiconductor die to the interconnect structure.
4. The semiconductor device of claim 1 , further including a heat sink disposed over the shielding frame.
5. The semiconductor device of claim 1 , further including a second semiconductor die disposed over the first semiconductor die.
6. The semiconductor device of claim 1 , further including a second semiconductor die disposed adjacent to the first semiconductor die within the shielding frame.
7. A semiconductor device, comprising:
a first semiconductor die;
a shielding frame disposed over the first semiconductor die, the shielding frame including a plate with a plurality of openings and a body integrated with and extending from the plate to define a cavity;
an encapsulant deposited in the cavity; and
an interconnect structure formed over the first semiconductor die.
8. The semiconductor device of claim 7 , further including a conductive via formed through the encapsulant.
9. The semiconductor device of claim 7 , further including a bump formed over the first semiconductor die to electrically connect the first semiconductor die to the interconnect structure.
10. The semiconductor device of claim 7 , further including a heat sink disposed over the shielding frame.
11. The semiconductor device of claim 7 , further including a second semiconductor die disposed over the first semiconductor die.
12. The semiconductor device of claim 7 , further including a second semiconductor die disposed adjacent to the first semiconductor die within the shielding frame.
13. The semiconductor device of claim 7 , wherein the openings in the shielding frame enable excess encapsulant to escape.
14. A semiconductor device, comprising:
a first semiconductor die;
a shielding framed disposed over the first semiconductor die, the shielding frame including a cavity and a plurality of openings;
an encapsulant deposited in the cavity; and
an interconnect structure formed over the first semiconductor die.
15. The semiconductor device of claim 14 , further including a conductive via formed through the encapsulant.
16. The semiconductor device of claim 14 , wherein the openings in the shielding frame enable excess encapsulant to escape.
17. The semiconductor device of claim 14 , further including a heat sink disposed over the shielding frame.
18. The semiconductor device of claim 14 , further including a second semiconductor die disposed over the first semiconductor die.
19. The semiconductor device of claim 14 , further including a second semiconductor die disposed adjacent to the first semiconductor die within the shielding frame.
20. The semiconductor device of claim 14 , wherein the shielding frame includes a plate and a body integrated with and extending from the plate to define the cavity.
21. A semiconductor device, comprising:
a first semiconductor die;
a shielding frame disposed over the first semiconductor die, the shielding frame including a cavity and a plurality of openings; and
an encapsulant deposited in the cavity.
22. The semiconductor device of claim 21 , further including a conductive via formed through the encapsulant outside a footprint of the cavity.
23. The semiconductor device of claim 21 , further including an interconnect structure formed over the first semiconductor die.
24. The semiconductor device of claim 21 , wherein the openings in the shielding frame enable excess encapsulant to escape.
25. The semiconductor device of claim 21 , wherein the shielding frame includes a plate and a body integrated with and extending from the plate to define the cavity.