Semiconductor device and method of simultaneous testing of multiple interconnects for electro-migration
A semiconductor device has a substrate and conductive layer over the substrate. A resistive element is formed between first and second portions of the conductive layer. A plurality of semiconductor die each with first and second bumps is mounted to the substrate with the first and second bumps electrically connected to the first and second portions of the conductive layer. A test current is routed in sequence through the first portion of the conductive layer, through the first and second bumps, and through the second portion of the conductive layer until continuity failure of the second bump. The test current originates from a single power supply. The test current continues to flow through the resistive element after the continuity failure of the second bump. The continuity failure can be detected by sensing an increase in voltage across the second bump.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive layer over the substrate;
forming a resistive element electrically connected between first and second portions of the conductive layer;
providing a semiconductor die including first and second bumps;
mounting the semiconductor die to the substrate with the first and second bumps electrically connected to the first and second portions of the conductive layer, respectively; and
routing a test current in sequence through the first portion of the conductive layer, through the first and second bumps, and through the second portion of the conductive layer until continuity failure of the second bump, wherein the test current continues to flow through the resistive element after the continuity failure of the second bump.
2. The method of claim 1 , further including:
forming third and fourth bumps over the semiconductor die; and
mounting the semiconductor die to the substrate with the third and fourth bumps electrically connected to the third and fourth portions of the conductive layer, respectively, wherein the first, third, and fourth portions of the conductive layer are electrically common.
3. The method of claim 2 , further including routing the test current in sequence through the first, third, and fourth portions of the conductive layer, through the first, third, and fourth bumps, through the second bump, and through the second portion of the conductive layer until continuity failure of the second bump.
4. The method of claim 1 , further including mounting a plurality of semiconductor die to the substrate.
5. The method of claim 1 , further including sensing a voltage across the second bump.
6. The method of claim 1 , wherein the test current originates from a single power supply.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming a conductive layer over the substrate;
forming a resistive element between first and second portions of the conductive layer;
providing a semiconductor die with a plurality of interconnect structures;
mounting the semiconductor die to the substrate with the interconnect structures electrically connected to the first and second portions of the conductive layer; and
routing a test current in sequence through the interconnect structures until continuity failure of one of the interconnect structures, wherein the test current continues to flow through the resistive element after the continuity failure.
8. The method of claim 7 , wherein the interconnect structures include a plurality of bumps.
9. The method of claim 7 , further including routing the test current through a plurality of electrically common interconnect structures.
10. The method of claim 9 , further including routing the test current in sequence through the electrically common interconnect structures, through at least one of the interconnect structures, and through the second portion of the conductive layer until continuity failure.
11. The method of claim 7 , further including mounting a plurality of semiconductor die to the substrate.
12. The method of claim 10 , further including sensing a voltage across at least one of the interconnect structures.
13. The method of claim 7 , wherein the test current originates from a single power supply.
14. A method of making a semiconductor device, comprising:
providing an electro-migration test substrate;
forming a conductive layer over the electro-migration test substrate;
forming a resistive element on the electro-migration substrate to electrically connected between first and second portions of the conductive layer on the electro-migration test substrate;
providing a semiconductor die with a plurality of interconnect structures;
mounting the semiconductor die to the electro-migration test substrate with the interconnect structures electrically connected to the first and second portions of the conductive layer; and
routing a test current in sequence through the interconnect structures until continuity failure of one of the interconnect structures, wherein the test current continues to flow through the resistive element after the continuity failure.
15. The method of claim 14 , wherein the interconnect structures include a plurality of bumps.
16. The method of claim 14 , further including routing the test current through a plurality of electrically common interconnect structures.
17. The method of claim 16 , further including routing the test current in sequence through the electrically common interconnect structures, through at least one of the interconnect structures, and through the second portion of the conductive layer until continuity failure.
18. The method of claim 14 , further including mounting a plurality of semiconductor die to the substrate.
19. The method of claim 17 , further including sensing a voltage across at least one of the interconnect structures.
20. A semiconductor device, comprising:
an electro-migration test substrate;
a conductive layer formed over the electro-migration test substrate; and
a resistive element formed between portions of the conductive layer on the electro-migration test substrate; and
a semiconductor die with a plurality of interconnect structures, the semiconductor die being mounted to the electro-migration test substrate with the interconnect structures electrically connected to first and second portions of the conductive layer.
21. The semiconductor device of claim 20 , wherein the interconnect structures include a plurality of bumps.
22. The semiconductor device of claim 20 , wherein a test current is routed in sequence through the interconnect structures until continuity failure of one of the interconnect structures.
23. The semiconductor device of claim 22 , wherein the test current is routed in sequence through the electrically common interconnect structures, through at least one of the interconnect structures, and through the second portion of the conductive layer until continuity failure.