Method of forming vertically offset bond on trace interconnects on recessed and raised bond fingers
View Patent ↗A method of making a semiconductor device comprises providing a carrier, forming a first conductive layer extending above a surface of the carrier, providing a substrate, disposing the first conductive layer into a first surface of the substrate, removing the carrier, forming a second conductive layer extending above the first surface of the substrate to create a vertical offset between the first conductive layer and second conductive layer, and forming a plurality of first bumps over the first conductive layer and second conductive layer. The method further includes the steps of disposing a third conductive layer into a second surface of the substrate opposite the first surface of the substrate, forming a fourth conductive layer extending above the second surface of the substrate to create a vertical offset between the third conductive layer and fourth conductive layer, and forming a plurality of second bumps.
1. A method of making a semiconductor device, comprising:
providing a carrier;
forming a first conductive layer extending above a surface of the carrier;
providing a substrate;
disposing the first conductive layer into a first surface of the substrate;
removing the carrier;
forming a second conductive layer extending above the first surface of the substrate to create a vertical offset between the first conductive layer and second conductive layer; and
forming a plurality of first bumps over the first conductive layer and second conductive layer.
2. The method of claim 1 , further including:
disposing a third conductive layer into a second surface of the substrate opposite the first surface of the substrate;
forming a fourth conductive layer extending above the second surface of the substrate to create a vertical offset between the third conductive layer and fourth conductive layer; and
forming a plurality of second bumps over the third conductive layer and fourth conductive layer.
3. The method of claim 1 , wherein the vertical offset between the first conductive layer and second conductive layer is about 20 micrometers.
4. The method of claim 1 , further including forming a third conductive layer over the second conductive layer.
5. The method of claim 1 , further including forming a conductive via through the substrate.
6. The method of claim 1 , further including:
forming a seed layer over the carrier prior to forming the first conductive layer; and
removing a portion of the seed layer after forming the second conducive layer.
7. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first conductive layer into a first surface of the substrate;
forming a second conductive layer extending above the first surface of the substrate to create a vertical offset between the first conductive layer and second conductive layer; and
forming a first interconnect structure over the first conductive layer and second conductive layer.
8. The method of claim 7 , further including:
disposing a third conductive layer into a second surface of the substrate opposite the first surface of the substrate;
forming a fourth conductive layer extending above the second surface of the substrate to create a vertical offset between the third conductive layer and fourth conductive layer; and
forming a second interconnect structure over the third conductive layer and fourth conductive layer.
9. The method of claim 7 , wherein the vertical offset between the first conductive layer and second conductive layer is about 20 micrometers.
10. The method of claim 7 , further including forming a third conductive layer over the second conductive layer.
11. The method of claim 7 , further including forming a conductive via through the substrate.
12. The method of claim 7 , wherein the first interconnect structure includes a plurality of bumps or a plurality of conductive posts.
13. The method of claim 7 , further including forming a photoresist layer over the substrate comprising an opening to expose the first conductive layer and second conductive layer.
14. A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first conductive layer into a first surface of the substrate;
forming a second conductive layer extending above the first surface of the substrate; and
forming a first interconnect structure over the first conductive layer and second conductive layer.
15. The method of claim 14 , further including:
disposing a third conductive layer into a second surface of the substrate opposite the first surface of the substrate;
forming a fourth conductive layer extending above the second surface of the substrate; and
forming a second interconnect structure over the third conductive layer and fourth conductive layer.
16. The method of claim 14 , wherein a vertical offset between the first conductive layer and second conductive layer is about 20 micrometers.
17. The method of claim 14 , further including forming a third conductive layer over the second conductive layer.
18. The method of claim 14 , further including forming a conductive via through the substrate.
19. The method of claim 14 , wherein the first interconnect structure includes a plurality of bumps or a plurality of conductive posts.